US4125672A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Polymeric resist mask composition
Assignee: NTT Inc
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Filing: 1977-01-19
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Granted: 1978-11-14
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Expires: 1997-01-19
Abstract
Abstract A polymeric resist mask composition thinly coated on a semiconductor substrate, wherein the prescribed portions of said resist mask are exposed to high energy rays such as electron beams, X-rays or ultraviolet rays for degradation, and the degraded portions of the resist mask are removed by an organic solvent to present a prescribed resist mask pattern on the semiconductor substrate, which comprises a halogenated polymethacrylic ester whose composition is expressed by the general formula <IMAGE> (WHERE R denotes a halogenated alkyl radical including a halogen element selected from the group consisting of fluorine, chlorine and bromine, and at least one fluorine atom in case said radical contains chlorine or bromine and n indicates an average polymerization degree of 100 to 20,000) and an organic solvent for said halogenated polymethacrylate.
Inventors
- 👤 Masami Kakuchi
- 👤 Shungo Sugawara
- 👤 Kei Murase
- 👤 Kentaro Matsuyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 11:50
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/039; H; H01; H01F; H01F41/00; H01F41/32; H01F41/34; Y; Y10; Y10T; Y10T428/00; Y10T428/31504; Y10T428/3154; Y10T428/31652; Y10T428/31667
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
151 words
A polymeric resist mask composition thinly coated on a semiconductor substrate, wherein prescribed portions of said resist mask are exposed to high energy rays such as electron beams, X-rays, or ultraviolet rays for degradation, and the degraded portions of the resist mask are removed by an organic solvent to present a prescribed resist mask pattern on the semiconductor substrate, which comprises a fluorine-containing polymethyl methacrylate whose composition is expressed by the formula ##STR17## wherein R 1 and R 2 are substituents selected from the group consisting of hydrogen, methyl, ethyl, propyl, chloromethyl, and trifluoromethyl; R 3 and R 4 are substituents selected from the group consisting of hydrogen, methyl and fluorine, and R 5 is a fluoroalkyl radical containing from 1 to 8 carbon atoms, fluorine and bromine, and n indicates an average polymerization degree of from about 100 to about 20,000; and an organic solvent for said fluorine-containing polymethyl methacrylate.
Claim 2
Dependent Claim
151 words
A polymeric resist mask composition thinly coated on a semiconductor substrate, wherein prescribed portions of said resist mask are exposed to high energy rays such as electron beams, X-rays, or ultraviolet rays for degradation, and the degraded portions of the resist mask are removed by an organic solvent to present a prescribed resist mask pattern on the semiconductor substrate, which comprises a fluorine-containing polymethyl methacrylate whose composition is expressed by the formula ##STR17## wherein R 1 and R 2 are substituents selected from the group consisting of hydrogen, methyl, ethyl, propyl, chloromethyl, and trifluoromethyl; R 3 and R 4 are substituents selected from the group consisting of hydrogen, methyl and fluorine, and R 5 is a fluoroalkyl radical containing from 1 to 8 carbon atoms, fluorine and bromine, and n indicates an average polymerization degree of from about 100 to about 20,000; and an organic solvent for said fluorine-containing polymethyl methacrylate.
Claim 3
Dependent Claim
23 words
A polymeric resist mask composition according to claim 1, wherein the fluorine-containing polymethacrylic ester has an average polymerization degree of 500 to 5000.
Claim 4
Dependent Claim
21 words
A polymeric resist mask composition according to claim 1, wherein the organic solvent for said fluorine-containing polymethyl methacrylate is methylethyl ketone.
Claim 5
Dependent Claim
25 words
A polymeric resist mask composition according to claim 1, which is prepared by dissolving 1g of a fluorine-containing methacrylic ester in 10cc of methylethyl ketone.
Claim 6
Dependent Claim
27 words
A polymeric resist mask composition according to claim 1, wherein the fluorine-containing methacrylic ester is coated on a silicon oxide layer formed on a silicon wafer substrate.
Claim 7
Dependent Claim
17 words
A polymeric resist mask composition according to claim 1 wherein the fluorine-containing methacrylic ester is 2,2,3,4,4,4-hexafluorobutyl methacrylate.
Claim 8
Dependent Claim
35 words
A polymeric resist mask composition of claim 1 wherein said organic solvent for removing the degraded portions of resist mask composition is a solution of 200 parts of isopropanol and 1 part of methylisobutyl ketone.
Claim 9
Dependent Claim
35 words
A polymeric resist mask composition of claim 1 wherein said organic solvent for removing the degraded portions of resist mask composition is a solution of 150 parts of isopropanol and 1 part of methyl-isobutyl ketone.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-11-13 | 1982-05-15 | 1982-11-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-11-13 | 1986-05-15 | 1986-11-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-11-13 | 1990-05-15 | 1990-11-14 | $7700.00 | Window Closed / Lapsed |