Conductive silicon carbide

Claim 2

A body of electrically conductive material consisting only of silicon, carbon and the element germanium in a range between 0.01% and 0.03%.

Claim 3

The material of claim 1 wherein said body is in amorphous form.

Claim 4

The material of claim 1 wherein said body is in crystalline form.

Claim 5

An electrically conductive material consisting of hydrogen free silicon carbide containing in the range of 0.01 to 0.03 percent germanium.

Claim 6

An electrically conductive material consisting of hydrogen free silicon carbide containing in the range of 0.01 to 0.03 percent germanium.

Claim 7

A hydrogen free electrically conductive product of silicon carbide consisting of silicon, carbon and the element germanium in the range of 0.01 to 0.03% made by the process of pyrolytically dissociating an organic silicon and carbon bearing gas selected from the group consisting of triethylsilane, trimethylsilane, tetraethylsilane and tetramethylsilane and an organic germanium bearing gas of tetraethylgermanium in a proportion of two parts silicon and carbon bearing gas to one part germanium bearing gas over a substrate taken from the group of quartz, sapphire, ceramic alumina, silicn carbide, gallium arsenide and metals melting above 800° C., positioned at the highest temperature point in the flow of the said gases whereby said product is deposited on said substrate.

Claim 8

A hydrogen free electrically conductive product of silicon carbide consisting of silicon, carbon and the element germanium in the range of 0.01 to 0.03% made by the process of pyrolytically dissociating an organic silicon and carbon bearing gas selected from the group consisting of triethylsilane, trimethylsilane, tetraethylsilane and tetramethylsilane and an organic germanium bearing gas of tetraethylgermanium in a proportion of two parts silicon and carbon bearing gas to one part germanium bearing gas over a substrate taken from the group of quartz, sapphire, ceramic alumina, silicn carbide, gallium arsenide and metals melting above 800° C., positioned at the highest temperature point in the flow of the said gases whereby said product is deposited on said substrate.

Claim 9

The product of claim 5 wherein said deposited product is in amorphous form.

Claim 10

The product of claim 5 wherein said deposited product is in crystalline form.

Claim 11

The process of forming a growth of Sic containing in the range of 0.01% to 0.03% of germanium on a substrate taken from the group of quartz, sapphire, ceramic alumina, silicon carbide, gallium arsenide and metals melting above 800° C. comprising in combination the steps of: providing a first pyrolytically decomposable gaseous vehicle of at least one organic gas containing silicon and carbon selected from the group consisting of triethylsilane, trimethylsilane, tetraethylsilane and tetramethylsilane, flowing over said substrate, providing a second pyrolytically decomposable gaseous vehicle of tetraethylgermanium, mixing said first and said second gaseous vehicles a proportion of two parts of said silicon and carbon bearing gas to one part of said germanium bearing gas in contact with said substrate, and heating said substrate to a temperature higher than all surrounding temperatures, said temperature being the highest temperature required for the pyrolytic decomposition of said first and said second gaseous vehicles.

Claim 12

The process of forming a growth of Sic containing in the range of 0.01% to 0.03% of germanium on a substrate taken from the group of quartz, sapphire, ceramic alumina, silicon carbide, gallium arsenide and metals melting above 800° C. comprising in combination the steps of: providing a first pyrolytically decomposable gaseous vehicle of at least one organic gas containing silicon and carbon selected from the group consisting of triethylsilane, trimethylsilane, tetraethylsilane and tetramethylsilane, flowing over said substrate, providing a second pyrolytically decomposable gaseous vehicle of tetraethylgermanium, mixing said first and said second gaseous vehicles a proportion of two parts of said silicon and carbon bearing gas to one part of said germanium bearing gas in contact with said substrate, and heating said substrate to a temperature higher than all surrounding temperatures, said temperature being the highest temperature required for the pyrolytic decomposition of said first and said second gaseous vehicles.

Claim 13

The process of claim 8 wherein said temperature is 750° C.