US4449286A
Expired / Lapsed
US
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Method for producing a semiconductor layer solar cell
Assignee: Licentia Patent Verwaltungs GmbH
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Filing: 1981-10-27
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Granted: 1984-05-22
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Expires: 2001-10-27
Abstract
Abstract A method for producing a semiconductor solar cell in which a layer of semiconductor material is applied to a substrate by means of plasma spraying. The energy density in the plasma zone is maintained sufficiently high that the semiconductor vaporizes and is brought out of the plasma zone in the form of a vapor jet, which is condensed on the substrate in the form of a semiconductor layer.
Inventors
- 👤 Reinhard Dahlberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:45
CPC Classifications
C; C23; C23C; C23C4/00; C23C4/04; H; H10; H10F; H10F71/00; H10F71/121; H10F71/1221; H10F77/00; H10F77/10; H10F77/16; H10F77/169; H10F77/1692; H10F77/20; H10F77/206; H10F77/211; H10F77/40; H10F77/42; H10F77/488; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/52; Y02E10/546; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
86 words
In a method for producing a semiconductor layer solar cell by applying a semiconductor layer to a substrate by plasma spraying, in which a semiconductor material is brought out of the plasma zone of the plasma spraying means, the improvement comprising maintaining the energy density in the plasma zone sufficiently high such that the semiconductor vaporizes and is brought out of the plasma zone in the form of a vapor jet, and condensing the vapor jet on the substrate in the form of a semiconductor layer.
Claim 2
Dependent Claim
86 words
In a method for producing a semiconductor layer solar cell by applying a semiconductor layer to a substrate by plasma spraying, in which a semiconductor material is brought out of the plasma zone of the plasma spraying means, the improvement comprising maintaining the energy density in the plasma zone sufficiently high such that the semiconductor vaporizes and is brought out of the plasma zone in the form of a vapor jet, and condensing the vapor jet on the substrate in the form of a semiconductor layer.
Claim 3
Dependent Claim
21 words
Method as defined in claim 1, wherein the substrate on which the vapor jet is condensed is disposed in a vacuum.
Claim 4
Dependent Claim
18 words
Method as defined in claim 1, wherein the plasma spraying means comprises two electrodes made of semiconductor material.
Claim 5
Dependent Claim
22 words
Method as defined in claim 1, wherein the semiconductor material is introduced into the plasma zone in the form of a powder.
Claim 6
Dependent Claim
41 words
Method as defined in claim 1, wherein the semiconductor material is introduced into the plasma zone in the form of a rod which extends into the plasma zone, wherein the end of the rod melts in the plasma zone and vaporizes.
Claim 7
Dependent Claim
29 words
Method as defined in claim 1, wherein the plasma spraying means includes electrodes made of a semiconductor material which vaporizes in the plasma, and is condensed on the substrate.
Claim 8
Dependent Claim
27 words
Method as defined in claim 1, wherein the plasma spraying means includes a carrier gas comprising oxygen-free hydrogen or nitrogen or noble gas, or a mixture thereof.
Claim 9
Dependent Claim
24 words
Method as defined in claim 1, wherein the plasma of the plasma spraying spraying means burns only in the vapor of the semiconductor material.
Claim 10
Dependent Claim
26 words
Method as defined in claim 1, wherein the plasma spraying means is water-stabilized and the plasma burns in dissociated water vapor with an excess of hydrogen.
Claim 11
Dependent Claim
14 words
Method as defined in claim 1, wherein the substrate comprises an electrically conductive material.
Claim 12
Dependent Claim
26 words
Method as defined in claim 1, wherein the substrate comprises an electrically insulating material which is coated at least in part with an electrically conductive coating.
Claim 13
Dependent Claim
29 words
Method as defined in claim: 1, wherein the semiconductor material is n-conductive or p-conductive silicon, germanium, carbon, boron, a Group III/Group V compound or a Group II/Group VI compound.
Claim 14
Dependent Claim
21 words
Method as defined in claim 1, additionally comprising providing a pn-junction near the surface on one side of the semiconductor layer.
Claim 15
Dependent Claim
21 words
Method as defined in claim 1, additionally comprising providing a light transmitting Schottky contact on one side of the semiconductor layer.
Claim 16
Dependent Claim
20 words
Method as defined in claim 1, additionally comprising providing a light transmitting hetero-junction on one side of the semiconductor layer.
Claim 17
Dependent Claim
26 words
Method as defined in claim 13, 14, or 15, wherein said one side is the side of the semiconductor layer which is removed from the substrate.
Claim 18
Dependent Claim
24 words
Method as defined in claim 1, additionally comprising coating the semiconductor layer with an insulating layer of a thickness less than 1×10 -6 cm.
Claim 19
Dependent Claim
18 words
Method as defined in claim 17, wherein the thickness of said insulating layer is about 2×10 -7 cm.
Claim 20
Dependent Claim
42 words
Method as defined in claim 1, wherein said layer of semiconductor material is applied in an atmosphere which contains a gas which is non-reactive or slightly reactive with said semiconductor material, but which is highly reactive with impurities in said semiconductor material.
Claim 21
Dependent Claim
30 words
Method as defined in claim 1, additionally comprising raising the temperature of the substrate so that the substrate is at an elevated temperature during the application of the semiconductor layer.
Claim 22
Dependent Claim
25 words
Method as defined in claim 1, wherein the semiconductor layer is applied to the substrate in a structured manner with the aid of a mask.
Claim 23
Dependent Claim
28 words
Method as defined in claim 1, additionally comprising briefly heating or melting the semiconductor layer with an electric arc jet or plasma jet, after applying the semiconductor layer.
References Cited (Backward Citations)
US2034334A
Cited
DE973156C
Cited
US3922214A
Cited
GB1526416A
Cited
US4003770A
Cited
US4161418A
Cited
US4059461A
Cited
US4078097A
Cited
US4140546A
Cited
DE2805247A1
Cited
DE2824564A1
Cited
US4166880A
Cited
US4240842A
Cited
DE2924584A1
Cited
DE2941908A1
Cited
DE3016807A1
Cited
US4292342A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-05-22 | 1987-11-21 | 1988-05-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-05-22 | 1991-11-21 | 1992-05-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-05-22 | 1995-11-21 | 1996-05-22 | $7700.00 | Window Closed / Lapsed |