US4140546A
Expired / Lapsed
US
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Method of producing a monocrystalline layer on a substrate
Assignee: Siemens AG
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Filing: 1977-08-17
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Granted: 1979-02-20
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Expires: 1997-08-17
Abstract
Abstract A monocrystalline layer is vapor-deposited on a substrate surface while substantially simultaneously such surface is irradiated with an ion beam having ions with a kinetic energy of at least 10 keV. The resultant ion current impinging on the substrate surface is controlled in such a manner that the sum of the vaporization rate and sputtering rate caused by such ions is smaller than the combined condensation rate of such ions and vaporized particles.
Inventors
- 👤 Eberhard Krimmel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:41
CPC Classifications
C; C30; C30B; C30B23/00; C30B23/02; C30B23/08
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
150 words
A method of producing at least one monocrystalline layer on a substrate surface, comprising: vaporizing a material which is to form said monocrystalline layer from a source thereof, condensing the so-attained vapor particles of such material on said substrate surface so as to form a layer of said material on said surface and maintaining an electrical field on said substrate surface during formation of said layer, said field having a component thereof located in the plane containing said substrate surface; substantially simultaneously impinging said substrate surface with an ion flux composed of ions having a kinetic energy of at least 10 keV upon impingement on said surface; and controlling the current of said ions impinging on said substrate surface in such a manner that the sum of the vaporization rate and sputtering rate caused by said ions is smaller than the combined condensation rate of said ions and vapor particles.
Claim 2
Independent Claim
150 words
A method of producing at least one monocrystalline layer on a substrate surface, comprising: vaporizing a material which is to form said monocrystalline layer from a source thereof, condensing the so-attained vapor particles of such material on said substrate surface so as to form a layer of said material on said surface and maintaining an electrical field on said substrate surface during formation of said layer, said field having a component thereof located in the plane containing said substrate surface; substantially simultaneously impinging said substrate surface with an ion flux composed of ions having a kinetic energy of at least 10 keV upon impingement on said surface; and controlling the current of said ions impinging on said substrate surface in such a manner that the sum of the vaporization rate and sputtering rate caused by said ions is smaller than the combined condensation rate of said ions and vapor particles.
Claim 3
Dependent Claim
16 words
A method as defined in claim 1 wherein said substrate is composed of an insulating material.
Claim 4
Dependent Claim
34 words
A method as defined in claim 1 wherein said controlled current of ions impinging on said substrate surface is maintained at a value less than about 10 mA per cm 2 of substrate surface.
Claim 5
Dependent Claim
25 words
A method as defined in claim 1 wherein said ion flux is composed of ions of the material forming the layer on said substrate surface.
Claim 6
Dependent Claim
27 words
A method as defined in claim 1 wherein said electrical field is generated by an operational electrode positioned in close proximity to the surface of said substrate.
Claim 7
Dependent Claim
14 words
A method as defined in claim 1 wherein said substrate is an amorphous material.
Claim 8
Dependent Claim
13 words
A method as defined in claim 1 wherein said substrate is a film.
Claim 9
Dependent Claim
45 words
A method as defined in claim 1 wherein vaporization of said material is accomplished by heating a mass of said material within a crucible via an electron beam and a voltage of more than about 10 keV is applied between said crucible and said substrate.
Claim 10
Dependent Claim
53 words
A method as defined in claim 1 wherein vaporization of said material is accomplished by heating a mass of said material within a crucible via an electron beam and a voltage of more than about 10 keV is applied between said crucible and an operational electrode positioned in close proximity to said substrate.
Claim 11
Dependent Claim
40 words
A method as defined in claim 1 wherein a ratio of the number of vapor particles impinging on the surface of said substrate relative to the number of impinging ions is selected so as to be greater than about 10.
Claim 12
Dependent Claim
39 words
A method as defined in claim 1 wherein a plurality of layers, at least some of which are composed of a material different from the material of other layers, are formed one upon the other on said substrate surface.
Claim 13
Dependent Claim
14 words
A method as defined in claim 1 wherein said material is a semiconductor material.
Claim 14
Dependent Claim
15 words
A method as defined in claim 1 wherein said ion flux includes dopant material ions.
Claim 15
Dependent Claim
24 words
A method as defined in claim 1 wherein said substrate is maintained at a temperature below about 400° C during formation of said layer.
Claim 16
Dependent Claim
24 words
A method as defined in claim 1 wherein said substrate is maintained at a temperature of about 200° C during formation of said layer.
Claim 17
Dependent Claim
16 words
A method as defined in claim 5 wherein said electrode comprises a portion of said substrate.
Claim 18
Independent Claim
157 words
A method of producing at least one monocrystalline layer on a substrate surface, comprising: vaporizing a material which is to form said layer from a source thereof, condensing the so-attained vapor particles of such material on said substrate surface so as to form a layer of said material on said surface, and applying a mechanical tension to at least the surface of said substrate during the formation of said layer, said mechanical tension having a component thereof located in the plane containing the surface of said substrate; substantially simultaneously impinging said substrate surface with an ion flux composed of ions having a kinetic energy of at least 10 keV upon impingement of said surface; and controlling the current of said ions impinging on said substrate surface in such a manner that the sum of the vaporization rate and sputtering rate caused by said ions is smaller than the combined condensation rate of said ions and vapor particles.
Claim 19
Independent Claim
157 words
A method of producing at least one monocrystalline layer on a substrate surface, comprising: vaporizing a material which is to form said layer from a source thereof, condensing the so-attained vapor particles of such material on said substrate surface so as to form a layer of said material on said surface, and applying a mechanical tension to at least the surface of said substrate during the formation of said layer, said mechanical tension having a component thereof located in the plane containing the surface of said substrate; substantially simultaneously impinging said substrate surface with an ion flux composed of ions having a kinetic energy of at least 10 keV upon impingement of said surface; and controlling the current of said ions impinging on said substrate surface in such a manner that the sum of the vaporization rate and sputtering rate caused by said ions is smaller than the combined condensation rate of said ions and vapor particles.
Claim 20
Dependent Claim
17 words
A method as defined in claim 17 wherein said mechanical tension is applied by stretching said substrate.
Claim 21
Dependent Claim
13 words
A method as defined in claim 12 wherein said semiconductor material is silicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-02-19 | 1982-08-21 | 1983-02-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-02-19 | 1986-08-21 | 1987-02-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-02-19 | 1990-08-21 | 1991-02-20 | $7700.00 | Window Closed / Lapsed |