US4292342A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High pressure plasma deposition of silicon
Assignee: Motorola Solutions Inc
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Filing: 1980-05-09
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Granted: 1981-09-29
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Expires: 2000-05-09
Abstract
Abstract Polycrystalline silicon is deposited on the interior surface of a shaped container. The silicon is deposited by reacting hydrogen and a silicon bearing gas in the presence of a high pressure plasma. The silicon body is separated from the shaped container by utilizing thermal expansion shear stress.
Inventors
- 👤 Kalluri R. Sarma
- 👤 M. John Rice, Jr.
- 👤 I. Arnold Lesk
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 00:36
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/225; C23C16/00; C23C16/01; C23C16/44; C23C16/50; C23C16/513
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
116 words
A process for depositing silicon in a plasma reactor apparatus which comprises the steps of: providing a substrate positioned in said reactor apparatus, said substrate heated to an elevated deposition temperature; providing a high pressure plasma nozzle for conveying separate gas streams; raising said high pressure nozzle to a high rf potential to initiate a high pressure plasma in said reactor apparatus; introducing hydrogen and silicon bearing reactant through said high pressure plasma nozzle to create a plasma of said hydrogen and said silicon bearing reactant; reacting said plasma of hydrogen and said silicon bearing reactant to deposit silicon on said substrate; removing said substrate from said reactor apparatus; and separating said silicon and said substrate.
Claim 2
Dependent Claim
116 words
A process for depositing silicon in a plasma reactor apparatus which comprises the steps of: providing a substrate positioned in said reactor apparatus, said substrate heated to an elevated deposition temperature; providing a high pressure plasma nozzle for conveying separate gas streams; raising said high pressure nozzle to a high rf potential to initiate a high pressure plasma in said reactor apparatus; introducing hydrogen and silicon bearing reactant through said high pressure plasma nozzle to create a plasma of said hydrogen and said silicon bearing reactant; reacting said plasma of hydrogen and said silicon bearing reactant to deposit silicon on said substrate; removing said substrate from said reactor apparatus; and separating said silicon and said substrate.
Claim 3
Dependent Claim
15 words
The process of claim 1 wherein said substrate has the form of a hollow cylinder.
Claim 4
Dependent Claim
13 words
The process of claim 1 wherein said silicon bearing reactant is a chlorosilane.
Claim 5
Dependent Claim
13 words
The process of claim 1 wherein said silicon bearing reactant is silicon tetrachloride.
Claim 6
Dependent Claim
12 words
The process of claim 1 wherein said silicon bearing reactant is trichlorosilane.
Claim 7
Dependent Claim
18 words
The process of claim 1 wherein said substrate is heated to a temperature in excess of 950° C.
Claim 8
Dependent Claim
18 words
The process of claim 1 wherein said substrate and said silicon are separated by thermal expansion shear stress.
Claim 9
Dependent Claim
107 words
A process for depositing polycrystalline silicon which comprises the steps of: providing a reactor enclosure for controlling the reaction ambient; providing a substrate having a selected interior shape; providing sealing means for closing said enclosure, said sealing means allowing the passage therethrough of said substrate; providing means for generating a high pressure rf plasma; initiating a high pressure plasma, said high pressure plasma directed to the interior of said substrate; introducing reactants comprising hydrogen and a silicon bearing compound to said high pressure plasma and creating a high pressure rf plasma thereof, said high pressure plasma reactants interacting to deposit silicon on the interior of said substrate.
Claim 10
Dependent Claim
107 words
A process for depositing polycrystalline silicon which comprises the steps of: providing a reactor enclosure for controlling the reaction ambient; providing a substrate having a selected interior shape; providing sealing means for closing said enclosure, said sealing means allowing the passage therethrough of said substrate; providing means for generating a high pressure rf plasma; initiating a high pressure plasma, said high pressure plasma directed to the interior of said substrate; introducing reactants comprising hydrogen and a silicon bearing compound to said high pressure plasma and creating a high pressure rf plasma thereof, said high pressure plasma reactants interacting to deposit silicon on the interior of said substrate.
Claim 11
Dependent Claim
119 words
A process for depositing polycrystalline silicon which comprises the steps of: providing a reactor enclosure for controlling the reaction ambient; providing a substrate having a selected interior shape; providing sealing means for closing said enclosure, said sealing means allowing the passage therethrough of said substrate; providing means for generating a high pressure rf plasma; initiating a high pressure plasma, said high pressure plasma directed to the interior of said substrate; introducing reactants comprising hydrogen and a silicon bearing compound to said high pressure plasma, said reactants interacting in the presence of said high pressure plasma to deposit silicon on the interior of said substrate; and controllably moving said substrate through said reactor enclosure during the deposition of said silicon.
Claim 12
Dependent Claim
119 words
A process for depositing polycrystalline silicon which comprises the steps of: providing a reactor enclosure for controlling the reaction ambient; providing a substrate having a selected interior shape; providing sealing means for closing said enclosure, said sealing means allowing the passage therethrough of said substrate; providing means for generating a high pressure rf plasma; initiating a high pressure plasma, said high pressure plasma directed to the interior of said substrate; introducing reactants comprising hydrogen and a silicon bearing compound to said high pressure plasma, said reactants interacting in the presence of said high pressure plasma to deposit silicon on the interior of said substrate; and controllably moving said substrate through said reactor enclosure during the deposition of said silicon.
Claim 13
Dependent Claim
16 words
The process of claim 9 further comprising the step of separating said silicon from said substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-09-28 | 1985-03-30 | 1985-09-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-09-28 | 1989-03-30 | 1989-09-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-09-28 | 1993-03-30 | 1993-09-29 | $7700.00 | Window Closed / Lapsed |