US4443489A
Expired / Lapsed
US
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Method for the formation of phosphorous-nitrogen based glasses useful for the passivation of III-V semiconductor materials
Assignee: RTX Corp
•
Filing: 1983-05-10
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Granted: 1984-04-17
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Expires: 2003-05-10
Abstract
Abstract A method for the chemical vapor deposition of amorphous, glass-like, phosphorous-nitrogen based films on the surface of a substrate is disclosed. The process entails exposing the substrate to a reactant gas stream comprising phosphorous, nitrogen and hydrogen. This method is particularly suited for passivating Group III-V semiconductor materials.
Inventors
- 👤 Melvyn E. Cowher
- 👤 Alexander J. Shuskus
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:01
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; Y; Y10; Y10S; Y10S438/00; Y10S438/958
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
78 words
A method for depositing a thin, amorphous, glass-like corrosion resistant film of phospham on a III-V semiconductor material including the following steps: placing the III-V semiconductor material in a reaction chamber; raising the temperature of the material to about 260° C. to about 270° C. by contacting the material with an RF induced hydrogen plasma; and then spontaneously depositing the phospham on the material by contacting the material with an RF induced plasma of phosphorous, nitrogen and hydrogen.
Claim 2
Independent Claim
78 words
A method for depositing a thin, amorphous, glass-like corrosion resistant film of phospham on a III-V semiconductor material including the following steps: placing the III-V semiconductor material in a reaction chamber; raising the temperature of the material to about 260° C. to about 270° C. by contacting the material with an RF induced hydrogen plasma; and then spontaneously depositing the phospham on the material by contacting the material with an RF induced plasma of phosphorous, nitrogen and hydrogen.
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein the pressure within the reaction chamber is about 0.5 torr to about 4.0 torr.
Claim 4
Dependent Claim
12 words
The method of claim 1 wherein the phosphorous is introduced as phosphine.
Claim 5
Dependent Claim
21 words
The method of claim 2 wherein the gases are introduced as 0.5 torr hydrogen, 0.075 torr phosphine, and 1.5 torr nitrogen.
Claim 6
Dependent Claim
13 words
The method of claim 3 wherein the III-V semiconductor material is gallium arsenide.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-04-17 | 1987-10-17 | 1988-04-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-04-17 | 1991-10-17 | 1992-04-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-04-17 | 1995-10-17 | 1996-04-17 | $7700.00 | Window Closed / Lapsed |