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US4432073A
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Semiconductor memory device
Assignee: Toshiba Corp
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Filing: 1981-01-23
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Granted: 1984-02-14
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Expires: 2001-01-23
Abstract
Abstract An insulated gate field-effect transistor is formed along a surface of a semiconductor substrate, and a polycrystalline silicon layer serving as a resistive element is formed over the gate electrode of the field-effect transistor via a thick insulating layer. The polycrystalline silicon layer is connected at one end to the drain region of the field-effect transistor and at the other end to a line for reading data. The gate electrode of the field-effect transistor is connected to a line for writing data, and the source region is connected to a common line.
Inventors
- 👤 Fujio Masuoka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:51
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/403; G11C11/404; H10D88/00
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
151 words
A semiconductor memory device comprising: a semiconductor substrate; a plurality of dynamic gain memory elements formed on the surface of said semiconductor substrate, each of the memory elements having a gate electrode and channel electrodes comprising source and drain electrodes; a plurality of resistive elements each corresponding to a different memory element and each having two ends, one end of each of said resistive elements being connected to one of the channel electrodes of the corresponding memory element; a first column line to which the ends of said resistive elements not connected to the memory element channel electrodes are commonly connected for reading data; a second column line to which the gate electrodes of said memory elements are commonly connected for writing data; and a plurality of row lines for reading and writing data, said row lines being connected to the memory elements channel electrodes not connected to said resistive elements.
Claim 2
Dependent Claim
151 words
A semiconductor memory device comprising: a semiconductor substrate; a plurality of dynamic gain memory elements formed on the surface of said semiconductor substrate, each of the memory elements having a gate electrode and channel electrodes comprising source and drain electrodes; a plurality of resistive elements each corresponding to a different memory element and each having two ends, one end of each of said resistive elements being connected to one of the channel electrodes of the corresponding memory element; a first column line to which the ends of said resistive elements not connected to the memory element channel electrodes are commonly connected for reading data; a second column line to which the gate electrodes of said memory elements are commonly connected for writing data; and a plurality of row lines for reading and writing data, said row lines being connected to the memory elements channel electrodes not connected to said resistive elements.
Claim 3
Dependent Claim
62 words
A semiconductor memory device according to claim 1, wherein said gate electrodes of said memory elements and said plurality of resistive elements are constituted by respective first and second polycrystalline silicon layers, said second polycrystalline silicon layer that serves as said resistive element being formed over said first polycrystalline silicon layer that serves as said gate electrode via a thick insulating film.
Claim 4
Dependent Claim
15 words
A semiconductor memory device according to claim 1, wherein said memory elements are field-effect transistors.
Claim 5
Dependent Claim
94 words
A semiconductor memory device comprising a semiconductor substrate of a first conductivity type, a first buried region of a second conductivity type formed in said substrate along the principal surface thereof, a second buried region of the first conductivity type formed in said first buried region, and a field-effect transistor having source and drain regions of the second conductivity type formed in said first buried region, the gate electrode of said field-effect transistor being formed over a portion of the substrate principal surface between the source and drain regions via a gate insulating film.
Claim 6
Dependent Claim
94 words
A semiconductor memory device comprising a semiconductor substrate of a first conductivity type, a first buried region of a second conductivity type formed in said substrate along the principal surface thereof, a second buried region of the first conductivity type formed in said first buried region, and a field-effect transistor having source and drain regions of the second conductivity type formed in said first buried region, the gate electrode of said field-effect transistor being formed over a portion of the substrate principal surface between the source and drain regions via a gate insulating film.
Claim 7
Dependent Claim
30 words
A semiconductor memory device according to claim 4, wherein said second burried region is located beneath a channel region formed between the source and drain regions of said field-effect transistor.
Claim 8
Dependent Claim
76 words
A semiconductor memory device according to claim 1 or 4, wherein said field-effect transistor is combined with a field-effect transistor circuit which detects the change of the conductance of the field-effect transistor thereby to read binary data from the first field-effect transistor, said circuit including a dummy field-effect transistor having conductance which is half the sum of a first conductance corresponding to a first binary data and a second conductance corresponding to a second binary data.
Claim 9
Dependent Claim
38 words
A semiconductor memory device according to claim 6, wherein said field-effect transistor circuit further includes a flip-flop sensing amplifier which reads data from said field-effect transistor, using the conductance of said dummy field-effect transistor as a reference conductance.
Claim 10
Dependent Claim
51 words
A semiconductor memory device according to claim 6, wherein said field-effect transistor has a first channel length and a first channel width and said dummy field-effect transistor has a second channel length which is half the first channel length or a second channel width which is half the first channel width.
Claim 11
Dependent Claim
88 words
A semiconductor memory according to claim 2 wherein each of said resistive elements includes a field-effect transistor formed adjacent to the corresponding memory element field effect transistor, each memory element channel electrode connected to one of said resistive elements serving as the same electrode of its corresponding resistive element field-effect transistor and being connected to the corresponding resistive element transistor's gate electrode, the electrode of each of said resistive element field-effect transistors not connected to a memory cell being connected to said first column line for reading data.
Claim 12
Dependent Claim
88 words
A semiconductor memory device according to claim 1, wherein each of said resistive elements is constituted by a field-effect transistor formed adjacent to its corresponding memory element, each memory element channel electrode connected to one of said resistive element field-effect transistors serving as the same electrode of its corresponding resistive element field-effect transistor and being connected to the corresponding resistive element transistor's gate electrode, the electrode of each of said field-effect transistors not connected to a memory element being connected to said first column line for reading data.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-02-13 | 1987-08-15 | 1988-02-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-02-13 | 1991-08-15 | 1992-02-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-02-13 | 1995-08-15 | 1996-02-14 | $7700.00 | Window Closed / Lapsed |