Method of producing photoelectric transducers

Claim 1

A method of producing a photoelectric transducer including depositing a photoconductive layer of amorphous hydrogenated silicon on a predetermined substrate having an irregular surface including non-flat portions, said predetermined substrate being a semiconductor substrate comprising at least an impurity-doped region, an electrode contacting at least part of said impurity-doped region, and a predetermined insulating material layer thereby constituting semiconductor switch elements and interconnections therebetween for a photoelectric transducer, in an atmosphere containing a plasma, comprising the steps of: placing said predetermined substrate with an irregular surface on a first electrode such that said irregular surface is exposed, said first electrode constituting a holder for said predetermined substrate; providing a second electrode as a target to oppose said first electrode; and perforning at least part of said depositing a photoconductive layer of amorphous hydrogenated silicon on the predetermined substrate with a negative bias potential of -5 V to -300 V being applied to said first electrode, and a ratio of power to be supplied to the substrate and the target being in the range of between 1/1 and 1/10, wherein the application of said negative bias voltage to said first electrode acts to sputter-etch a film deposited on said non-flat surface differentially from that on the flat surface to thereby produce a crack-free and pinhole-free photoconductive film of amorphous hydrogenated silicon on the substrate.

Claim 2

A method of producing a photoelectric transducer including depositing a photoconductive layer of amorphous hydrogenated silicon on a predetermined substrate having an irregular surface including non-flat portions, said predetermined substrate being a semiconductor substrate comprising at least an impurity-doped region, an electrode contacting at least part of said impurity-doped region, and a predetermined insulating material layer thereby constituting semiconductor switch elements and interconnections therebetween for a photoelectric transducer, in an atmosphere containing a plasma, comprising the steps of: placing said predetermined substrate with an irregular surface on a first electrode such that said irregular surface is exposed, said first electrode constituting a holder for said predetermined substrate; providing a second electrode as a target to oppose said first electrode; and perforning at least part of said depositing a photoconductive layer of amorphous hydrogenated silicon on the predetermined substrate with a negative bias potential of -5 V to -300 V being applied to said first electrode, and a ratio of power to be supplied to the substrate and the target being in the range of between 1/1 and 1/10, wherein the application of said negative bias voltage to said first electrode acts to sputter-etch a film deposited on said non-flat surface differentially from that on the flat surface to thereby produce a crack-free and pinhole-free photoconductive film of amorphous hydrogenated silicon on the substrate.

Claim 13

A method of producing a photoconductive layer for a photoelectric transducer on a substrate with surface irregularities including nonflat portions, comprising the steps of: (a) preparing, as said substrate, a semiconductor substrate including substantially flat surfaces and non-flat surfaces, said substrate being a semiconductor substrate comprising at least an impurity-doped region, an electrode contacting at least part of said impurity-doped region, and a predetermined insulating material layer thereby constituting semiconductor switch elements and interconnections therebetween for a photoelectric transducer; (b) placing the semiconductor substrate thus prepared on a first electrode serving as a substrate holder; (c) disposing a second electrode as a target in opposition to said first electrode; and (d) depositing a photoconductive layer on said semiconductor substrate in an atmosphere containing a plasma, with a negative bias voltage of -5 V to -300 V being applied to said first electrode, and a ratio of power to be supplied to the substrate and the target being in the range of 1/1 to 1/10, wherein the application of said negative bias voltage to said first electrode acts to sputter-etch a film deposited on said non-flat surface differentially from that on the flat surface to thereby produce a crack- and/or pinhole-free photoconductive film on said flat and non-flat surfaces.

Claim 14

A method of producing a photoconductive layer for a photoelectric transducer on a substrate with surface irregularities including nonflat portions, comprising the steps of: (a) preparing, as said substrate, a semiconductor substrate including substantially flat surfaces and non-flat surfaces, said substrate being a semiconductor substrate comprising at least an impurity-doped region, an electrode contacting at least part of said impurity-doped region, and a predetermined insulating material layer thereby constituting semiconductor switch elements and interconnections therebetween for a photoelectric transducer; (b) placing the semiconductor substrate thus prepared on a first electrode serving as a substrate holder; (c) disposing a second electrode as a target in opposition to said first electrode; and (d) depositing a photoconductive layer on said semiconductor substrate in an atmosphere containing a plasma, with a negative bias voltage of -5 V to -300 V being applied to said first electrode, and a ratio of power to be supplied to the substrate and the target being in the range of 1/1 to 1/10, wherein the application of said negative bias voltage to said first electrode acts to sputter-etch a film deposited on said non-flat surface differentially from that on the flat surface to thereby produce a crack- and/or pinhole-free photoconductive film on said flat and non-flat surfaces.