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US4409134A
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Photoelectric conversion semiconductor and manufacturing method thereof
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1981-02-24
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Granted: 1983-10-11
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Expires: 2001-02-24
Abstract
Abstract A semi-amorphous, photoelectric conversion semiconductor which is formed of a mixture of a microcrystalline semiconductor and a non-crystalline semiconductor and in which the mixture is doped with a dangling bond neutralizer, such as hydrogen, chlorine or fluorine, and the microcrystalline semiconductor has a lattice strain and a particle size of 5 to 200 A.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 09:43
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/166; H10F77/1662; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
94 words
A photoelectric conversion semiconductor which is formed of a mixture of a microcrystalline semiconductor and a non-crystalline semiconductor and in which the mixture is doped with a dangling bond neutralizer and the microcrystalline semiconductor has a lattice strain; the microcrystalline semiconductor is 5 to 200 A in particle size and dispersed in the non-crystalline semiconductor; the dangling bond neutralizer is hydrogen, chlorine or fluorine; the microcrystalline semiconductor and the non-crystalline semiconductor are each formed by silicon, germanium, Si 3 N 4-x (0<x<4), SiC x (0<x<1), Si x Ge 1-x (0<x<1), GaAs, BP or InP.
Claim 2
Dependent Claim
94 words
A photoelectric conversion semiconductor which is formed of a mixture of a microcrystalline semiconductor and a non-crystalline semiconductor and in which the mixture is doped with a dangling bond neutralizer and the microcrystalline semiconductor has a lattice strain; the microcrystalline semiconductor is 5 to 200 A in particle size and dispersed in the non-crystalline semiconductor; the dangling bond neutralizer is hydrogen, chlorine or fluorine; the microcrystalline semiconductor and the non-crystalline semiconductor are each formed by silicon, germanium, Si 3 N 4-x (0<x<4), SiC x (0<x<1), Si x Ge 1-x (0<x<1), GaAs, BP or InP.
Claim 3
Dependent Claim
23 words
A photoelectric conversion semiconductor according to claim 1 wherein the dangling bond neutralizer is less than 5 mol% with regard to the mixture.
Claim 4
Dependent Claim
23 words
A photoelectric conversion semiconductor according to claim 1 wherein the microcrystalline semiconductor contains an impurity which provides a P or N type conductivity.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-10-10 | 1987-04-11 | 1987-10-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-10-10 | 1991-04-11 | 1991-10-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-10-10 | 1995-04-11 | 1995-10-11 | $7700.00 | Window Closed / Lapsed |