US4399451A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method for production thereof
Assignee: Fujitsu Ltd
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Filing: 1980-12-30
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Granted: 1983-08-16
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Expires: 2000-12-30
Abstract
Abstract A plural layered wiring which comprises a plurality of polycrystal semiconductor layers can be improved in its magnitude of circuit integration, when one or more upper polycrystal semiconductor layers which is or are doped to a moderate impurity concentration is or are utilized as resistor elements, the lowest polycrystal semiconductor layer which is highly doped is utilized for electrodes and/or wirings for active elements, and both polycrystal layers are connected with each other by regions which are highly doped by upward diffusion of impurities contained in highly doped regions of a substrate, because this configuration entirely avoids the restriction that is imposed for the location of resistor elements arranged in the upper layers. This arrangement is realized by a specific sequential combination of steps which includes a step of upward diffusion of impurities from the highly doped regions of the substrate. An additional advantage of this method is the exclusion of a so-called non-butting process.
Inventors
- 👤 Kazunari Shirai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 20:37
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/412; H10B; H10B10/00; H10B10/15; H10D88/00; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171; H10P32/30; H10P32/302; H10W; H10W20/00; H10W20/01; H10W20/40; H10W20/41; H10W20/44; H10W20/4451; H10W44/00; H10W44/401
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
179 words
A semiconductor device comprising: a semiconductor substrate having regions with a high impurity concentration selectively located therein, a first insulator layer formed on said substrate to selectively cover said regions of said substrate, a highly doped first polycrystalline semiconductor layer formed selectively on said first insulator layer, a second insulator layer selectively covering said first polycrystalline semiconductor layer, and a second polycrystalline semiconductor layer selectively covering said first and second insulator layers, and selectively contacting parts of the first polycrystalline semiconductor layer and of said substrate regions, at least one of said parts of the first polycrystalline semiconductor layer being located contiguously to at least one of said substrate regions, wherein said second polycrystalline semiconductor layer is more heavily doped where it is in contact with said substrate regions and said first polycrystalline semiconductor layer, due to upward diffusion of impurites from said substrate regions and said first polycrystalline semiconductor layer, and wherein said first polycrystalline semiconductor layer comprises electrodes and wirings, and said second polycrystalline semiconductor layer comprises resistor elements overlying at least in part said substrate regions.
Claim 2
Dependent Claim
179 words
A semiconductor device comprising: a semiconductor substrate having regions with a high impurity concentration selectively located therein, a first insulator layer formed on said substrate to selectively cover said regions of said substrate, a highly doped first polycrystalline semiconductor layer formed selectively on said first insulator layer, a second insulator layer selectively covering said first polycrystalline semiconductor layer, and a second polycrystalline semiconductor layer selectively covering said first and second insulator layers, and selectively contacting parts of the first polycrystalline semiconductor layer and of said substrate regions, at least one of said parts of the first polycrystalline semiconductor layer being located contiguously to at least one of said substrate regions, wherein said second polycrystalline semiconductor layer is more heavily doped where it is in contact with said substrate regions and said first polycrystalline semiconductor layer, due to upward diffusion of impurites from said substrate regions and said first polycrystalline semiconductor layer, and wherein said first polycrystalline semiconductor layer comprises electrodes and wirings, and said second polycrystalline semiconductor layer comprises resistor elements overlying at least in part said substrate regions.
Claim 3
Dependent Claim
66 words
The semiconductor device of claim 1, wherein, said first insulator layer comprises a thick field insulator layer and a thin gate insulator layer, and each said part of said first polycrystalline semiconductor layer contacted by said second polycrystalline semiconductor layer is located at least in part on said thin gate insulator layer, and said resistor elements lie at least in part on said thin gate insulator.
Claim 4
Dependent Claim
63 words
The device of claim 2, comprising an array of memory cells, each said cell comprising two of said resistor elements and four transistors, each said transistors being formed of said substrate regions with said first polycrystalline semiconductor layer comprising the gate thereof, and the elements of each said cell being connected in a predetermined configuration with two bit lines and a word line.
Claim 5
Dependent Claim
67 words
The device of claim 3, each said cell comprising said substrate regions being arranged to form an S-shaped pattern, a first of said resistor elements lying along a respective one of the top or bottom of said S-shaped pattern, and the second of said two resistor elements lying along a respective one of the two other sides of said S-shaped pattern, perpendicularly to said first resistor element.
Claim 6
Dependent Claim
45 words
The device of claim 4, each said cell comprising said second polycrystalline semiconductor layer contacting two of said parts of said first polycrystalline semiconductor layer contiguously to two respective ones of said substrate regions, one at each of the two ends of said S-shaped pattern.
Claim 7
Dependent Claim
40 words
The device of claim 4, each said cell comprising said substrate regions forming an extension from each of the bottom and top of said S-shaped pattern, and said first polycrystalline semiconductor layer including a portion crossing both of said extensions.
Claim 8
Dependent Claim
22 words
The device of claim 6, both of said resistor elements overlying at least in part the same one of said substrate regions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-08-15 | 1987-02-14 | 1987-08-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-08-15 | 1991-02-14 | 1991-08-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-08-15 | 1995-02-14 | 1995-08-16 | $7700.00 | Window Closed / Lapsed |