US4336647A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making implant programmable N-channel read only memory
Assignee: Texas Instruments Inc
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Filing: 1979-12-21
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Granted: 1982-06-29
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Expires: 1999-12-21
Abstract
Abstract An MOS read only memory or ROM formed by the standard N-channel silicon gate manufacturing process uses a cell structure which allows implant programming after the metal level of contacts and interconnections has been deposited and patterned. Address lines and gates are polysilicon strips and output and ground lines are metal strips perpendicular to the address lines; these metal strips make contact to the sources and drains defined by N+ regions. Each potential MOS transistor in the array is programmed to be a logic "1" or "0" by selective ion implant through the polysilicon gates and thin gate oxide, using photoresist as a mask, after application of the metal level. The ion implant is not required to penetrate through the metal lines.
Inventors
- 👤 David J. McElroy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 11:36
CPC Classifications
H; H10; H10B; H10B20/00; H10B20/27; H10B20/30; H10B20/38; H10B20/383
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
131 words
A method of making a read-only-memory comprising the steps of: forming a plurality of insulated gate field effect transistors in a face of a semiconductor body, each of the transistors having a source, a drain and a polysilicon gate, the transistors being in a regular pattern of rows and columns to provide an array of memory cells, metal column lines extending along said face and making electrical contact to all of the sources and drains; masking said face to expose areas above selected ones of said gates and cover the gates of other of the transistors, and thereafter ion-implanting to program the array of memory cells by the masked ion implant in areas between the metal lines and penetrating through the gates of said selected ones of the field effect transistors.
Claim 2
Independent Claim
131 words
A method of making a read-only-memory comprising the steps of: forming a plurality of insulated gate field effect transistors in a face of a semiconductor body, each of the transistors having a source, a drain and a polysilicon gate, the transistors being in a regular pattern of rows and columns to provide an array of memory cells, metal column lines extending along said face and making electrical contact to all of the sources and drains; masking said face to expose areas above selected ones of said gates and cover the gates of other of the transistors, and thereafter ion-implanting to program the array of memory cells by the masked ion implant in areas between the metal lines and penetrating through the gates of said selected ones of the field effect transistors.
Claim 3
Dependent Claim
24 words
A method according to claim 1 wherein the step of ion implanting uses a mask applied after said metal column lines have been formed.
Claim 4
Dependent Claim
21 words
A method according to claim 1, wherein the step of ion implanting uses a mask comprising a patterned coating of photoresist.
Claim 5
Dependent Claim
39 words
A method according to claim 2 wherein the ion implanting step is after the metal is deposited and patterned, and wherein the semiconductor body is P-type silicon, the sources and drains are N-type, and the ion implant is P-type.
Claim 6
Independent Claim
142 words
A method of making a read-only-memory comprising which includes the steps of: forming a plurality of insulated gate field effect transistors in a face of a semiconductor body, each of the transistors having a source, a drain and a conductive gate, the transistors being in a regular pattern of rows and columns to provide an array of memory cells, a plurality of conductive strips forming said gates and degining row lines; forming a plurality of metal column lines on said face making electrical contact to the sources and drains of the transistors; ion-implanting selected areas of said face to program the array of memory cells by ion implant between the metal column lines and through the conductive gates of selected ones of the field effect transistors at said selected areas using a mask applied after said metal column lines have been formed.
Claim 7
Independent Claim
142 words
A method of making a read-only-memory comprising which includes the steps of: forming a plurality of insulated gate field effect transistors in a face of a semiconductor body, each of the transistors having a source, a drain and a conductive gate, the transistors being in a regular pattern of rows and columns to provide an array of memory cells, a plurality of conductive strips forming said gates and degining row lines; forming a plurality of metal column lines on said face making electrical contact to the sources and drains of the transistors; ion-implanting selected areas of said face to program the array of memory cells by ion implant between the metal column lines and through the conductive gates of selected ones of the field effect transistors at said selected areas using a mask applied after said metal column lines have been formed.
Claim 8
Dependent Claim
49 words
In a method according to claim 5, the conductive gates and conductive strips being polycrystalline silicon, the semiconductor body being P-type silicon, the sources and drains being N-type, and the ion implant being P-type, and wherein the step of programming uses an etch mask comprising a coating of photoresist.
Claim 9
Independent Claim
93 words
A method of making a semiconductor device comprising the steps of: forming a plurality of circuit elements in a face of a semiconductor body, each of the circuit elements having electrodes in the face and a control electrode overlying the face; forming a plurality of conductive strips on said face which contact said electrodes in said face; and introducing impurity material into said face to change the characteristics of the circuit elements by implant between adjacent conductive strips and through the control electrodes of selected ones of the circuit elements using a mask.
Claim 10
Independent Claim
93 words
A method of making a semiconductor device comprising the steps of: forming a plurality of circuit elements in a face of a semiconductor body, each of the circuit elements having electrodes in the face and a control electrode overlying the face; forming a plurality of conductive strips on said face which contact said electrodes in said face; and introducing impurity material into said face to change the characteristics of the circuit elements by implant between adjacent conductive strips and through the control electrodes of selected ones of the circuit elements using a mask.
Claim 11
Dependent Claim
19 words
A method according to claim 7 wherein the control electrodes are polycrystalline silicon in the form of elongated lines.
Claim 12
Dependent Claim
18 words
A method according to claim 8 wherein the conductive strips are metal lines perpendicular to said elongated lines.
Claim 13
Dependent Claim
35 words
A method according to claim 9 wherein the circuit elements are silicon gate field effect transistors and said metal lines are formed by metal deposited in a thin film and patterned prior to the implant.
Claim 14
Dependent Claim
27 words
A method according to claim 10 wherein the semiconductor body is P-type silicon, sources and drains of the transistors being N-type, and the ion implant being P-type.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-06-28 | 1985-12-28 | 1986-06-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-06-28 | 1989-12-28 | 1990-06-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-06-28 | 1993-12-28 | 1994-06-29 | $7700.00 | Window Closed / Lapsed |