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Preparation of III-V materials by reduction

Assignee: AT&T Inc
•
Filing: 1981-07-29
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Granted: 1983-08-16
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Expires: 2001-07-29
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Abstract

Abstract A method of producing III-V materials by reducing a complex salt in a hydrogen atmosphere is shown. For example, complex salts reduce to InP or GaAs. The salts are conveniently prepared by coprecipitation from a salt solution or by other methods. The stoichiometry can be modified by applying an overpressure of the more volatile element or elements during reduction.

Inventors

  • 👤 Patrick K. Gallagher
  • 👤 Murray Robbins

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 06:42
CPC Classifications
C; C22; C22C; C22C1/00; C22C1/007

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 83 words
A method of producing a material comprising at least one first element selected from the group consisting of gallium and indium, and at least one second element selected from the group consisting of antimony, arsenic, and phosphorus, characterized by reducing in an atmosphere comprising hydrogen at least one salt of the form Ma(NH 4 ) b Hc(XO 4 ) y , where M is said at least one first element, and X is said at least one second element, where a≦y and (b+c)/3=y-a.
Claim 2
Independent Claim 83 words
A method of producing a material comprising at least one first element selected from the group consisting of gallium and indium, and at least one second element selected from the group consisting of antimony, arsenic, and phosphorus, characterized by reducing in an atmosphere comprising hydrogen at least one salt of the form Ma(NH 4 ) b Hc(XO 4 ) y , where M is said at least one first element, and X is said at least one second element, where a≦y and (b+c)/3=y-a.
Claim 3
Dependent Claim 22 words
The method of claim 1 wherein an overpressure of at least one second element is applied to said salt during said reducing.
Claim 4
Dependent Claim 11 words
The method of claim 1 wherein said material comprises indium phosphide.
Claim 5
Dependent Claim 11 words
The method of claim 1 wherein said material comprises gallium arsenide.
Claim 6
Dependent Claim 11 words
The method of claim 1 wherein said material comprises indium antimonide.
Claim 7
Dependent Claim 29 words
The method of claim 1 wherein said material comprises a solid solution comprising at least three elements selected from the group consisting of indium, gallium, antimony, arsenic, and phosphorus.
Claim 8
Dependent Claim 15 words
The method of claim 1 wherein said salt is prepared by coprecipitation from a solution.
Claim 9
Dependent Claim 35 words
The method of claim 1 wherein at least two of said salts are reduced, wherein the salts are so formed that the diffusion distance between said first and second elements is less than 1 micrometer.
Claim 10
Dependent Claim 37 words
The method of claim 1 wherein the amount of said second element in said salt is substantially greater than the amount of said first element in said salt, whereby a desired composition of said material is obtained.
Claim 11
Dependent Claim 13 words
A compound or solid solution produced according to the method of claim 1.

References Cited (Backward Citations)

US3516935A Cited
US3850685A Cited
US3880677A Cited
JPS5015760A Cited
US4026994A Cited
JPS5580709A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1986-08-15 1987-02-14 1987-08-16 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1990-08-15 1991-02-14 1991-08-16 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1994-08-15 1995-02-14 1995-08-16 $7700.00 Window Closed / Lapsed

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