US3880677A
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Method for producing a single crystal of In{hd x{b Ga{hd 1{118 x{b P
Assignee: Zaidan Hojin Handotai Kenkyu Shinkokai
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Filing: 1972-12-27
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Granted: 1975-04-29
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Expires: 1992-12-27
Abstract
Abstract A single crystal of InxGa1 xP(O<1-x <0.9) having the desired 1-x value is produced when an In melt including P whose mole ratio to In is less than about 0.2 and Ga whose mole ratio to P is between 1/2 (1-x)MP and 2(1-x)MP, wherein MP is mole ratio of P to In in the In melt is heated at a temperature higher than a solidus temperature which ranges from 800*C. to 1150*C. of a single crystal of InxGa1 xP to be obtained for 10 hours to 20 hours, and cooled to a room temperature or some practical temperature higher than the room temperature at a cooling rate of about 2*C/hour to about 50*C/hour.
Inventors
- 👤 Jun-Ichi Nishizawa
- 👤 Ken Suto
- 👤 Yasuo Okuno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:52
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/10; C30B29/40; C30B11/00
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
126 words
A METHOD FOR PRODUCING A SINGLE CRYSTAL OF IN$GA1-$P WHEREIN 0$1-X$0.9, COMPRISING THE STEPS OF: PREPARING AN IN MELT, INTRODUCING P SO THAT ITS MOLE RATIO TO IN THE MELT IS LESS THAN ABOUT 0.2 INTO THE IN MELT, INTRODUCING GA WHOSE MOLE RATION TO P IN THE IN MELT IS BETWEEN 1/2(1-X)MP AND 2(1-X)MP WHEREIN MP IS MOLE RATIO OF P TO IN IN MELT, INTO THE IN MELT, HEATING THE IN MELT INCLUDING P AND GA AT A TEMPERATURE HIGHER THAN A SOLIDUS TEMPERATURE OF A SINGLE CRYSTAL OF INXGA1-XP TO BE OBTAINED, FOR A PERIOD OF FROM ABOUT 10 HOURS TO ABOUT 20 HOURS, AND COOLING THE RESULTANT IN MELT TO ROOM TEMPERATURE AT A COOLING RATE OF ABOUT 2*C/HOUR TO ABOUT 50*C/HOUR.
Claim 2
Independent Claim
126 words
A METHOD FOR PRODUCING A SINGLE CRYSTAL OF IN$GA1-$P WHEREIN 0$1-X$0.9, COMPRISING THE STEPS OF: PREPARING AN IN MELT, INTRODUCING P SO THAT ITS MOLE RATIO TO IN THE MELT IS LESS THAN ABOUT 0.2 INTO THE IN MELT, INTRODUCING GA WHOSE MOLE RATION TO P IN THE IN MELT IS BETWEEN 1/2(1-X)MP AND 2(1-X)MP WHEREIN MP IS MOLE RATIO OF P TO IN IN MELT, INTO THE IN MELT, HEATING THE IN MELT INCLUDING P AND GA AT A TEMPERATURE HIGHER THAN A SOLIDUS TEMPERATURE OF A SINGLE CRYSTAL OF INXGA1-XP TO BE OBTAINED, FOR A PERIOD OF FROM ABOUT 10 HOURS TO ABOUT 20 HOURS, AND COOLING THE RESULTANT IN MELT TO ROOM TEMPERATURE AT A COOLING RATE OF ABOUT 2*C/HOUR TO ABOUT 50*C/HOUR.
Claim 3
Dependent Claim
33 words
A method for producing a single crystal of InxGa1 xP according to claim 1, wherein the mole ratio of Ga to P in the In melt is between 3/4 (1-x)MP and (3/2) (1-x)MP.
Claim 4
Dependent Claim
32 words
A method for producing a single crystal of InxGa1 xP according to Claim 1, wherein the mole ratio of Ga to P in the In melt is between 7/8 (1-x)MP and (5/4)(1-x)MP.
Claim 5
Dependent Claim
41 words
A method for producing a single crystal according to claim 1, which further comprises the steps of introducing said In melt, P and Ga into an ampoule, and closing said ampoule prior to heating the In melt including P and Ga.
Claim 6
Dependent Claim
25 words
A method for producing a single crystal according to claim 1, wherein the In melt including P and Ga is heated in a closed container.
Claim 7
Independent Claim
182 words
A method for producing a single crystal of InxGa1 xP wherein 0<1-x<0.9, comprising the steps of: preparing an In melt; introducing P so that its mole ratio to In in the melt is less than about 0.2, into the In melt; introducing Ga so that its mole ratio to P in the In melt is between 1/2 (1-x)MP and 2(1-x)MP wherein MP is the mole ratio of P to In in the In melt, into In melt; disposing the In melt including P and Ga in a furnace; disposing a seed material at a different portion in the furnace from the portion at which In melt is disposed; heating the In melt including Ga and P at a temperature higher than a solidus temperature of a single crystal of InxGa1 xP to be obtained, for about 10 hours to about 20 hours; heating the seed material at a temperature lower than that of In melt; contacting the In melt with the seed material; and cooling the In melt to a room temperature at a cooling rate of about 2*C./hour to about 50*C./hour.
Claim 8
Independent Claim
182 words
A method for producing a single crystal of InxGa1 xP wherein 0<1-x<0.9, comprising the steps of: preparing an In melt; introducing P so that its mole ratio to In in the melt is less than about 0.2, into the In melt; introducing Ga so that its mole ratio to P in the In melt is between 1/2 (1-x)MP and 2(1-x)MP wherein MP is the mole ratio of P to In in the In melt, into In melt; disposing the In melt including P and Ga in a furnace; disposing a seed material at a different portion in the furnace from the portion at which In melt is disposed; heating the In melt including Ga and P at a temperature higher than a solidus temperature of a single crystal of InxGa1 xP to be obtained, for about 10 hours to about 20 hours; heating the seed material at a temperature lower than that of In melt; contacting the In melt with the seed material; and cooling the In melt to a room temperature at a cooling rate of about 2*C./hour to about 50*C./hour.
Claim 9
Dependent Claim
32 words
A method for producing a single crystal of InxGa1 xP according to claim 6, wherein the mole ratio of Ga to P in the In melt is between 3/4 (1-x)MP and (3/2)(1-x)MP.
Claim 10
Dependent Claim
32 words
A method for producing a single crystal of InxGa1 xP according to claim 6, wherein the mole ratio of Ga to P in the In melt is between 7/8 (1-x)MP and (5/4)(1-x)MP.
Claim 11
Dependent Claim
19 words
A method for producing a single crystal according to claim 6, wherein the seed material is GaAs or GaP.
Claim 12
Dependent Claim
28 words
A method for producing a single crystal according to claim 6, wherein the mole ratio Mp of P to In in the In melt is greater than 0.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-04-28 | 1978-10-28 | 1979-04-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-04-28 | 1982-10-28 | 1983-04-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-04-28 | 1986-10-28 | 1987-04-29 | $7700.00 | Window Closed / Lapsed |