Patent US4398206A successfully refreshed from Google Patents.
US4398206A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Transistor with integrated diode and resistor
Assignee: Intersil Corp
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Filing: 1981-02-11
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Granted: 1983-08-09
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Expires: 2001-02-11
Abstract
Abstract A semiconductor device including a transistor, diode and resistor comprises a body of semiconductor material formed with conventional emitter, base and collector regions. The collector region forms one electrode of the diode with the other electrode being formed in the region forming the base of the transistor and being separated from the base by an isolation ring. The contact between the emitter and the other electrode are integral, but are insulated from the isolation ring.
Inventors
- 👤 John M. S. Neilson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 00:10
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
195 words
A semiconductor device including a transistor, a diode and a resistor, said device comprising (a) a body of semiconductor material having first and second surfaces generally parallel to each other, (b) a first region of one conductivity type material extending into said body from said first surface and a second region of opposite conductivity type material extending into said body from said second surface, (c) an emitter region of said opposite type conductivity material extending into said first region from said first surface and forming a first PN junction therewith, said first and second regions forming a second PN junction, and (d) an isolation region of said opposite conductivity type material extending into said first region from said first surface and forming a third PN junction with said first region, whereby said first region is separated into (1) a base portion cooperating with said emitter region and said second region to form a transistor and (2) an electrode portion cooperating with said second region to form a diode, said base portion and said electrode portion being ohmically connected by a portion of the first region disposed between the second PN junction and third PN junction.
Claim 2
Dependent Claim
195 words
A semiconductor device including a transistor, a diode and a resistor, said device comprising (a) a body of semiconductor material having first and second surfaces generally parallel to each other, (b) a first region of one conductivity type material extending into said body from said first surface and a second region of opposite conductivity type material extending into said body from said second surface, (c) an emitter region of said opposite type conductivity material extending into said first region from said first surface and forming a first PN junction therewith, said first and second regions forming a second PN junction, and (d) an isolation region of said opposite conductivity type material extending into said first region from said first surface and forming a third PN junction with said first region, whereby said first region is separated into (1) a base portion cooperating with said emitter region and said second region to form a transistor and (2) an electrode portion cooperating with said second region to form a diode, said base portion and said electrode portion being ohmically connected by a portion of the first region disposed between the second PN junction and third PN junction.
Claim 3
Dependent Claim
37 words
A semiconductor device in accordance with claim 1 wherein said isolation region defines a closed configuration in said one surface and wherein said base portion is outside said configuration and said electrode portion is inside said configuration.
Claim 4
Dependent Claim
62 words
A semiconductor device in accordance with claim 1 including contact means for said emitter region, contact means for said base portion, contact means for said second region and contact means for said electrode portion, said emitter contact means and said electrode portion contact means being ohmically connected by a web portion, said web portion overlying said isolation region and being insulated therefrom.
Claim 5
Dependent Claim
84 words
A semiconductor device in accordance with claim 1 wherein said isolation region comprises a ring of material, said base portion being located outside said ring and said electrode portion being located inside said ring, contact means for said emitter region, contact means for said base portion, contact means for said second region and contact means for said electrode portion, said emitter contact means and said electrode portion contact region being interconnected with the interconnecting portion thereof overlying and being insulated from the isolation means.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-08-08 | 1987-02-07 | 1987-08-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-08-08 | 1991-02-07 | 1991-08-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-08-08 | 1995-02-07 | 1995-08-09 | $7700.00 | Window Closed / Lapsed |