US4392299A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing low resistance gates and interconnections
Assignee: RCA Corp
•
Filing: 1981-01-08
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Granted: 1983-07-12
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Expires: 2001-01-08
Abstract
Abstract A method of forming low resistance silicided gates or interconnects is described wherein a refractory metal and silicon is simultaneously co-deposited to form a composite layer which is thereafter heat treated in a non-oxidizing atmosphere to form the polycrystalline state of the silicide.
Inventors
- 👤 Joseph M. Shaw
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 04:55
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
96 words
A process for forming a low resistance refractory metal silicide on a substrate comprising the steps of: positioning the substrate in a reaction chamber maintained at a first temperature; depositing, in a single low pressure chemical vapor deposition step, a composite of a refractory metal and silicon on the substrate by simultaneously passing a gaseous mixture of both a refractory metal carbonyl and silane gas through the chamber and over the substrate; and heating the composite in a non-oxidizing atmosphere to a second temperature, higher than the first temperature, to form the silicide of the metal.
Claim 2
Dependent Claim
96 words
A process for forming a low resistance refractory metal silicide on a substrate comprising the steps of: positioning the substrate in a reaction chamber maintained at a first temperature; depositing, in a single low pressure chemical vapor deposition step, a composite of a refractory metal and silicon on the substrate by simultaneously passing a gaseous mixture of both a refractory metal carbonyl and silane gas through the chamber and over the substrate; and heating the composite in a non-oxidizing atmosphere to a second temperature, higher than the first temperature, to form the silicide of the metal.
Claim 3
Dependent Claim
38 words
The process of claim 1, wherein: the refractory metal is derived from the metal carbonyl selected from the group consisting of molybdenum and tungsten; and the silicon is derived from a mixture of silane and a carrier gas.
Claim 4
Dependent Claim
79 words
The process of claim 2, wherein the step of depositing a composite of the refractory metal and silicon comprises: maintaining the gaseous mixture of the refractory metal carbonyl in a carrier gas at a pressure of about 1 mm; maintaining the silane gas at a pressure of about 5 mm, and the substrate and the gases are maintained at the first temperature which ranges from about 500° C. to about 600° C. for a period of about 5 minutes.
Claim 5
Dependent Claim
58 words
The process of claim 3, wherein the step of heating the composite to the second temperature comprises the steps of: annealing the composite at a temperature ranging from about 900° C. to about 1000° C. in a hydrogen atmosphere; and maintaining the composite at the annealing temperature, in the hydrogen atmosphere, for a period of about 30 minutes.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-07-11 | 1987-01-10 | 1987-07-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-07-11 | 1991-01-10 | 1991-07-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-07-11 | 1995-01-10 | 1995-07-12 | $7700.00 | Window Closed / Lapsed |