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US4389294A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for avoiding residue on a vertical walled mesa

Assignee: International Business Machines Corp
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Filing: 1981-06-30
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Granted: 1983-06-21
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Expires: 2001-06-30
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Abstract

Abstract A method for eliminating deposited residues, for example polysilicon residue, on vertical silicon dioxide sidewalls that have been reactive ion etched includes reshaping the sidewalls to have a slope of at least +30° relative to the vertical direction of the sidewall.

Inventors

  • 👤 Narasipur G. Anantha
  • 👤 Harsaran S. Bhatia
  • 👤 John L. Mauer, IV
  • 👤 Homi G. Sarkary

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 16:46
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P95/00; H10P95/06; H10P95/062; H10P95/064; H10W10/012; H10W10/10; H10W10/13; H10W10/17; Y; Y10; Y10S; Y10S438/00; Y10S438/978

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 77 words
A method for avoiding residue on a vertical walled dielectric mesa of a layer to be deposited on said mesa and to be removed by reactive ion etching comprising the steps of providing a silicon substrate having said dielectric mesa on a surface thereof, and reshaping a wall of said dielectric mesa so as to be sloping at an angle equal to or greater than 30° relative to a line vertical to said surface of said substrate.
Claim 2
Independent Claim 77 words
A method for avoiding residue on a vertical walled dielectric mesa of a layer to be deposited on said mesa and to be removed by reactive ion etching comprising the steps of providing a silicon substrate having said dielectric mesa on a surface thereof, and reshaping a wall of said dielectric mesa so as to be sloping at an angle equal to or greater than 30° relative to a line vertical to said surface of said substrate.
Claim 3
Dependent Claim 21 words
A method as described in claim 1 whereby the reshaping is accomplished by removing material from the wall of said mesa.
Claim 4
Dependent Claim 18 words
A method as described in claim 2 whereby the material is removed from the mesa by ion milling.
Claim 5
Independent Claim 90 words
A method for avoiding residue on a vertical walled dielectric mesa of a layer to be deposited on said mesa and to be removed by reactive ion etching comprising the steps of providing a silicon substrate having said dielectric mesa on a surface thereof, reshaping a wall of said mesa so as to be sloping at an angle equal to or greater than 30° relative to a vertical line to said surface of said substrate, depositing said layer on said reshaped mesa, and removing said layer by reactive ion etching.
Claim 6
Independent Claim 90 words
A method for avoiding residue on a vertical walled dielectric mesa of a layer to be deposited on said mesa and to be removed by reactive ion etching comprising the steps of providing a silicon substrate having said dielectric mesa on a surface thereof, reshaping a wall of said mesa so as to be sloping at an angle equal to or greater than 30° relative to a vertical line to said surface of said substrate, depositing said layer on said reshaped mesa, and removing said layer by reactive ion etching.
Claim 7
Dependent Claim 15 words
A method as described in claim 4 whereby a wall is reshaped by ion milling.
Claim 8
Dependent Claim 28 words
A method as described in claim 5 whereby the ion milling is performed so as to cause the wall to slope at an angle of 30° to 45°.
Claim 9
Dependent Claim 15 words
A method as described in claim 4 whereby polysilicon is deposited on said reshaped mesa.

References Cited (Backward Citations)

US3880684A Cited
US3918149A Cited
US4007104A Cited
US4117301A Cited
US4073054A Cited
US4035276A Cited
US4076680A Cited
US4181564A Cited
US4135998A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1986-06-20 1986-12-20 1987-06-21 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1990-06-20 1990-12-20 1991-06-21 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1994-06-20 1994-12-20 1995-06-21 $7700.00 Window Closed / Lapsed

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