Patent US2592383A successfully refreshed from Google Patents.
Patent US4383883A successfully refreshed from Google Patents.
US4383883A
Expired / Lapsed
US
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Method for fabricating semiconductor device
Assignee: Toshiba Corp
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Filing: 1981-08-04
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Granted: 1983-05-17
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Expires: 2001-08-04
Abstract
Abstract A method is provided for fabricating a semiconductor device comprising the steps of: forming a groove on the surface of an insulator body; forming a polycrystalline or amorphous semiconductor layer on the surface of said insulator body including said groove; irradiating part of said semiconductor layer on said groove with an energy beam to convert said part into single crystals; and irradiating the remaining part of said semiconductor layer with said energy beam while displacing said energy beam to thereby sequentially form single crystals utilizing said single crystal semiconductor layer as a growing nucleus so as to form a continuous single crystal semiconductor on said insulator body. The method of the invention allows photolithography with good precision.
Inventors
- 👤 Yoshihisa Mizutani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 10:15
CPC Classifications
C; C30; C30B; C30B1/00; C30B1/02; C30B1/026; H; H10; H10D; H10D86/00; H10D86/01; H10D86/03; H10P; H10P34/00; H10P34/40; H10P34/42; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/38; H10P14/3802; H10P14/3808; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10S117/905; Y10S117/913; Y10S148/00; Y10S148/091; Y10S438/00; Y10S438/973
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
106 words
A method for fabricating a semiconductor device comprising the steps of: forming a groove on the surface of an insulator body; forming a polycrystalline or amorphous semiconductor layer on the surface of said insulator body including said groove; irradiating part of said semiconductor layer formed on said groove with an energy beam to convert said part into single crystals; and irradiating the remaining part of said semiconductor layer with said energy beam while displacing the energy beam to thereby sequentially form single crystals utilizing said single crystal semiconductor layer as a growing nucleus so as to form a continuous single crystal semiconductor on said insulator body.
Claim 2
Independent Claim
106 words
A method for fabricating a semiconductor device comprising the steps of: forming a groove on the surface of an insulator body; forming a polycrystalline or amorphous semiconductor layer on the surface of said insulator body including said groove; irradiating part of said semiconductor layer formed on said groove with an energy beam to convert said part into single crystals; and irradiating the remaining part of said semiconductor layer with said energy beam while displacing the energy beam to thereby sequentially form single crystals utilizing said single crystal semiconductor layer as a growing nucleus so as to form a continuous single crystal semiconductor on said insulator body.
Claim 3
Independent Claim
215 words
A method for fabricating a semiconductor device comprising the steps of: forming a groove on the surface of an insulator body; forming a polycrystalline or amorphous semiconductor layer on the surface of said insulator body including said groove; irradiating part of said semiconductor layer formed on said groove with an energy beam to convert said part into single crystals; irradiating the remaining part of said semiconductor layer with said energy beam while displacing the energy beam to thereby sequentially form single crystals utilizing said single crystal semiconductor layer as a growing nucleus so as to form a continuous single crystal semiconductor on said insulator body; forming an insulating layer on said continuous single crystal semiconductor layer; forming a groove on the surface of an insulating layer; forming a polycrystalline or amorphous semiconductor layer on the surface of said insulating layer including said groove; irradiating part of said semiconductor layer formed on said groove of said insulating layer with an energy beam to convert said part into single crystals; and irradiating the remaining part of said semiconductor layer with said energy beam while displacing the energy beam to thereby sequentially form single crystals utilizing said single crystal semiconductor layer as a growing nucleus so as to form a continuous single crystal semiconductor on said insulating layer.
Claim 4
Independent Claim
215 words
A method for fabricating a semiconductor device comprising the steps of: forming a groove on the surface of an insulator body; forming a polycrystalline or amorphous semiconductor layer on the surface of said insulator body including said groove; irradiating part of said semiconductor layer formed on said groove with an energy beam to convert said part into single crystals; irradiating the remaining part of said semiconductor layer with said energy beam while displacing the energy beam to thereby sequentially form single crystals utilizing said single crystal semiconductor layer as a growing nucleus so as to form a continuous single crystal semiconductor on said insulator body; forming an insulating layer on said continuous single crystal semiconductor layer; forming a groove on the surface of an insulating layer; forming a polycrystalline or amorphous semiconductor layer on the surface of said insulating layer including said groove; irradiating part of said semiconductor layer formed on said groove of said insulating layer with an energy beam to convert said part into single crystals; and irradiating the remaining part of said semiconductor layer with said energy beam while displacing the energy beam to thereby sequentially form single crystals utilizing said single crystal semiconductor layer as a growing nucleus so as to form a continuous single crystal semiconductor on said insulating layer.
Claim 5
Independent Claim
123 words
A method for fabricating a semiconductor device comprising the steps of: forming a plurality of grooves of different cross sectional shapes spaced apart from each other on the surface of an insulator body; forming a polycrystalline or amorphous semiconductor layer on the surface of said insulator body including said grooves; irradiating parts of said semiconductor layer on said grooves with an energy beam to convert said parts into single crystals; and irradiating the remaining part of said semiconductor layer with said energy beam while displacing said energy beam to thereby sequentially form single crystals utilizing said single crystal semiconductor layer as a growing nucleus so as to form a plurality of single crystal semiconductor layers having different crystal planes on said insulator body.
Claim 6
Independent Claim
123 words
A method for fabricating a semiconductor device comprising the steps of: forming a plurality of grooves of different cross sectional shapes spaced apart from each other on the surface of an insulator body; forming a polycrystalline or amorphous semiconductor layer on the surface of said insulator body including said grooves; irradiating parts of said semiconductor layer on said grooves with an energy beam to convert said parts into single crystals; and irradiating the remaining part of said semiconductor layer with said energy beam while displacing said energy beam to thereby sequentially form single crystals utilizing said single crystal semiconductor layer as a growing nucleus so as to form a plurality of single crystal semiconductor layers having different crystal planes on said insulator body.
Claim 7
Independent Claim
28 words
A method according to any one of claims 1 to 3, wherein ions are implanted in said polycrystalline or amorphous semiconductor layer before irradiation by said energy beam.
Claim 8
Independent Claim
50 words
A method according to any one of claims 1 to 3, wherein, in the step of irradiating the remaining part of said semiconductor layer with said energy beam, selectively forming an insulating film for element separation by selectively irradiating the remaining part of said semiconductor layer with said energy beam.
Claim 9
Independent Claim
26 words
A method according to any one of claims 1 to 3, wherein said energy beam is a laser beam, an electron beam, or an X-ray beam.
Claim 10
Dependent Claim
38 words
A method according to claim 1 or 3, wherein side walls of said groove formed on the surface of said insulator body form an angle of 90° or 45° with respect to the surface of said insulator body.
Claim 11
Dependent Claim
38 words
A method according to claim 2, wherein side walls of said grooves formed on the surfaces of said insulator body and said insulating layer, respectively, form an angle of 90° or 45° with respect to respective said surfaces.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-05-16 | 1986-11-15 | 1987-05-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-05-16 | 1990-11-15 | 1991-05-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-05-16 | 1994-11-15 | 1995-05-17 | $7700.00 | Window Closed / Lapsed |