Co-planar barrier-type charge coupled device with enhanced storage capacity and decreased leakage current

Claim 2

A charge coupled device comprising: a substrate of semiconductor material having a dopant impurity of P-type conductivity, said substrate having a first surface; a body of insulating material disposed on said first surface of said substrate; means defining a buried channel layer having a dopant impurity of N-type conductivity in said substrate lying adjacent to said first surface of said substrate and providing a charge transfer channel; first and second spaced apart phase electrodes overlying said channel in transverse relation thereto and arranged with respect to said body of insulating material so as to provide a layer of insulating material of uniform thickness between each of said phase electrodes and said first surface of said substrate; spaced relatively shallow regions having a dopant impurity of P-type conductivity lying within said buried channel layer of N-type conductivity near said first surface of said substrate, each of said relatively shallow P-type conductivity regions extending beneath a corresponding one of said first and second phase electrodes and being respectively aligned adjacent one edge thereof but terminating short of the opposite edge of the electrode corresponding thereto; said substrate under each of said first and second phase electrodes being divided into a barrier region including a respective shallow P-type conductivity region therein and an adjacent well region, said buried channel layer of N-type conductivity extending through said barrier regions and said well regions;

Claim 3

an enhanced relatively deep layer having a dopant impurity of P-type conductivity and of greater concentration than the P-type conductivity dopant impurity in the semiconductor material of said substrate disposed within said substrate at a depth spaced from said first surface and extending through said barrier regions and said well regions beneath said first and second phase electrodes; and the P-type conductivity dopant impurity of each of said relatively shallow P-type conductivity regions having a Gaussian distribution with a peak lying within 500 A-2000 A from said first surface of said substrate, the N-type conductivity dopant impurity of said N-type conductivity buried channel layer having a Gaussian distribution with a peak lying within 3000 A-10,000 A from said first surface, and the P-type conductivity dopant impurity of said enhanced relatively deep P-type conductivity layer having a Gaussian distribution with a peak lying within 5000 A-15,000 A from said first surface.

Claim 4

an enhanced relatively deep layer having a dopant impurity of P-type conductivity and of greater concentration than the P-type conductivity dopant impurity in the semiconductor material of said substrate disposed within said substrate at a depth spaced from said first surface and extending through said barrier regions and said well regions beneath said first and second phase electrodes; and the P-type conductivity dopant impurity of each of said relatively shallow P-type conductivity regions having a Gaussian distribution with a peak lying within 500 A-2000 A from said first surface of said substrate, the N-type conductivity dopant impurity of said N-type conductivity buried channel layer having a Gaussian distribution with a peak lying within 3000 A-10,000 A from said first surface, and the P-type conductivity dopant impurity of said enhanced relatively deep P-type conductivity layer having a Gaussian distribution with a peak lying within 5000 A-15,000 A from said first surface.

Claim 5

A charge coupled device as set forth in claim 1, wherein the P-type conductivity dopant impurity of each of said relatively shallow P-type conductivity regions has a peak density of approximately (1.0-50)×10 17 ions/cm 3 , the N-type conductivity dopant impurity of said N-type conductivity buried channel layer has a peak density of approximately (0.5-50)×10 16 ions/cm 3 , and the P-type conductivity dopant impurity of said enhanced relatively deep P-type conductivity layer has a peak density of approximately (1.0-50)×10 17 ions/cm 3 .

Claim 6

A charge coupled device comprising: a substrate of semiconductor material having a dopant impurity of P-type conductivity, said substrate having a first surface; a body of insulating material disposed on said first surface of said substrate; means defining a buried channel layer having a dopant impurity of N-type conductivity in said substrate lying adjacent to said first surface of said substrate and providing a charge transfer channel; first and second spaced apart phase electrodes overlying said channel in transverse relation thereto and arranged with respect to said body of insulating material so as to provide a layer of insulating material of uniform thickness between each of said phase electrodes and said first surface of said substrate; spaced relatively shallow regions having a dopant impurity of P-type conductivity lying within said buried channel layer of N-type conductivity near said first surface of said substrate, each of said relatively shallow P-type conductivity regions extending beneath a corresponding one of said first and second phase electrodes and being respectively aligned adjacent one edge thereof but terminating short of the opposite edge of the electrode corresponding thereto; said substrate under each of said first and second phase electrodes being divided into a barrier region including a respective shallow P-type conductivity region therein and an adjacent well region, said buried channel layer of N-type conductivity extending through said barrier regions and said well regions; an enhanced relatively deep layer having a dopant impurity of P-type conductivity and of greater concentration than the P-type conductivity dopant impurity in the semiconductor material of said substrate disposed within said substrate at a depth spaced from said first surface and extending through said barrier regions and said well regions beneath said first and second phase electrodes; and the N-type conductivity dopant impurity of said N-type conductivity buried channel layer having a relatively uniform distribution extending from said first surface of said substrate to approximately 3000 A-10,000 A below said first surface, and the P-type conductivity dopant impurity of said enhanced relatively deep P-type conductivity layer having a relatively uniform distribution extending from said N-type conductivity buried channel layer to approximately 5000 A-15,000 A below said first surface.

Claim 7

A charge coupled device comprising: a substrate of semiconductor material having a dopant impurity of P-type conductivity, said substrate having a first surface; a body of insulating material disposed on said first surface of said substrate; means defining a buried channel layer having a dopant impurity of N-type conductivity in said substrate lying adjacent to said first surface of said substrate and providing a charge transfer channel; first and second spaced apart phase electrodes overlying said channel in transverse relation thereto and arranged with respect to said body of insulating material so as to provide a layer of insulating material of uniform thickness between each of said phase electrodes and said first surface of said substrate; spaced relatively shallow regions having a dopant impurity of P-type conductivity lying within said buried channel layer of N-type conductivity near said first surface of said substrate, each of said relatively shallow P-type conductivity regions extending beneath a corresponding one of said first and second phase electrodes and being respectively aligned adjacent one edge thereof but terminating short of the opposite edge of the electrode corresponding thereto; said substrate under each of said first and second phase electrodes being divided into a barrier region including a respective shallow P-type conductivity region therein and an adjacent well region, said buried channel layer of N-type conductivity extending through said barrier regions and said well regions; an enhanced relatively deep layer having a dopant impurity of P-type conductivity and of greater concentration than the P-type conductivity dopant impurity in the semiconductor material of said substrate disposed within said substrate at a depth spaced from said first surface and extending through said barrier regions and said well regions beneath said first and second phase electrodes; and the N-type conductivity dopant impurity of said N-type conductivity buried channel layer having a relatively uniform distribution extending from said first surface of said substrate to approximately 3000 A-10,000 A below said first surface, and the P-type conductivity dopant impurity of said enhanced relatively deep P-type conductivity layer having a relatively uniform distribution extending from said N-type conductivity buried channel layer to approximately 5000 A-15,000 A below said first surface.

Claim 8

A charge coupled device as set forth in claim 3, wherein the density of the relatively uniformly distributed N-type conductivity dopant impurity of said N-type buried channel layer is approximately (0.5-50)×10 16 ions/cm 3 , and the density of the relatively uniformly distributed P-type conductivity dopant impurity of said enhanced relatively deep P-type conductivity layer is approximately (1.0-50)×10 17 ions/cm 3 .