Sputtering method and apparatus utilizing improved ion source

Claim 2

Sputtering apparatus comprising at least one element to be sputtered; at least one plasma source for generating a plasma from at least one ionizable gas where at least some of the charged particles of the plasma sputter the element, said plasma source including first and second electrostatic field defining surfaces at approximately the same potential; means for generating a magnetic field having lines of force which pass through said first and second electrostatic field defining surfaces; a generator anode disposed adjacent that portion of the magnetic field between said first and second electrostatic field defining surfaces; means for establishing an electric field between the generator anode and said first and second electrostatic field defining surfaces where at least portions of the electric and magnetic fields are substantially perpendicular to one another whereby said plasma is formed between said first and second electrostatic field defining surfaces and ejected away from the generator anode.

Claim 3

Apparatus as in claim 1 further comprising means for supplying electrons to the space between said first and second field defining surfaces.

Claim 4

Apparatus as in claim 2 wherein said means for supplying electrons is coextensive with at least one of said first and second field defining surfaces.

Claim 5

Apparatus as in claim 2 wherein at least one of said first and second electrostatic field defining surfaces is electrically isolated from the rest of the apparatus and accumulates a negative charge during sputtering due to electrons accumulating on the surface thereof in the presence of said magnetic field.

Claim 6

Apparatus as in claim 4 wherein both of said first and second electrostatic field defining surfaces are electrically isolated from the rest of the apparatus.

Claim 7

Apparatus as in claim 5 wherein said means for supplying electrons is a filament.

Claim 8

Apparatus as in claims 4 or 5 wherein said at least one of said first and second electrostatic field defining surfaces is an insulator.

Claim 9

Apparatus as in claims 4 or 5 wherein said at least one of said first and second electrostatic field defining surfaces is conductive.

Claim 10

Apparatus as in claim 1 wherein said element includes a target of coating material and where said apparatus includes a further element including a substrate upon which the coating material of the target is to be deposited.

Claim 11

Apparatus as in claim 9 wherein said target is the cathode of a planar magnetron, said planar magnetron including further means for generating a magnetic field having lines of force which pass through said target.

Claim 12

Apparatus as in claim 10 wherein said target is divided into a plurality of areas each with a different coating material, and said planar magnetron selectively generates a magnetic field having lines of force which pass through each area of said target according to a predetermined sequence thereby depositing the different coating materials on said substrate according to a predetermined ratio.

Claim 13

Apparatus as in claim 9 wherein said first and second field defining surfaces are concentric cylindrical surfaces.

Claim 14

Apparatus as in claim 12 wherein said target element is cylindrical and coaxially surrounds said first and second field defining surfaces, and said substrate element is elongated and has a common axis with said target element.

Claim 15

Apparatus as in claim 13 wherein the combination of said target element and said plasma source is moved along the axis of said substrate element to provide a uniform coating of target material over the surface of said substrate element.

Claim 16

Apparatus as in claim 13 wherein said substrate element is drawn through the center of the combination of said target element and said plasma source to provide a uniform coating of target material over the surface of said substrate element.

Claim 17

Apparatus as in claim 15 wherein said substrate element is wire.

Claim 18

Apparatus as in claim 12 wherein said target element is rod-shaped and has a common axis with said first and second field defining surfaces, and said substrate element is positioned in a plane perpendicular to said common axis.

Claim 19

Apparatus as in claim 1 further comprising second means for generating a magnetic field having lines of force which pass through said element, and second means for establishing an electric field between the generator anode and said element where at least portions of the electric and magnetic fields are substantially perpendicular to one another.

Claim 20

Apparatus as in claim 18 wherein said element is a substrate to be cleaned.

Claim 21

Apparatus as in claim 1 wherein said first and second field defining surfaces are circular and located on parallel planes with their centers on a common axis which perpendicularly intersects said parallel planes, and said generator anode is rod-shaped having an axis congruent with said common axis.

Claim 22

A sputtering method comprising the steps of providing at least one element to be sputtered; providing a plasma source for generating a plasma from at least one ionizable gas where at least some of the charged particles of the plasma sputter the element and where the plasma is generated by the steps of establishing first and second electrostatic field defining surfaces at approximately the same potential; generating a magnetic field having lines of force which pass through said first and second electrostatic field defining surfaces; providing a generator anode disposed adjacent that portion of the magnetic field between said first and second electrostatic field defining surfaces; establishing an electric field between the generator anode and said first and second electrostatic field defining surfaces where at least portions of the electric and magnetic fields are substantially perpendicular to one another whereby said plasma is formed between said first and second electrostatic field defining surfaces and ejected away from said generator anode.

Claim 23

A sputtering method comprising the steps of providing at least one element to be sputtered; providing a plasma source for generating a plasma from at least one ionizable gas where at least some of the charged particles of the plasma sputter the element and where the plasma is generated by the steps of establishing first and second electrostatic field defining surfaces at approximately the same potential; generating a magnetic field having lines of force which pass through said first and second electrostatic field defining surfaces; providing a generator anode disposed adjacent that portion of the magnetic field between said first and second electrostatic field defining surfaces; establishing an electric field between the generator anode and said first and second electrostatic field defining surfaces where at least portions of the electric and magnetic fields are substantially perpendicular to one another whereby said plasma is formed between said first and second electrostatic field defining surfaces and ejected away from said generator anode.

Claim 24

The method according to claim 21 further comprising the step of controlling the polarization layer adjacent the surface of said element to be sputtered to thereby permit high energy ions in said plasma to strike said element.

Claim 25

The method according to claim 22 wherein the step of controlling said polarization layer comprises the step of generating a second magnetic field having lines of force which pass through said element.

Claim 26

The method according to claim 23 wherein said element includes a target of coating material and further comprising the step of providing a further element including a substrate upon which the coating material of the target is to be deposited.

Claim 27

The method according to claim 24 wherein said target is divided into a plurality of areas each with a different coating material, said step of generating said second magnetic field being performed by selectively generating said second magnetic field so that lines of force pass through each area of said target according to a predetermined sequence thereby depositing different coating materials on said substrate according to a predetermined ratio.