Process for fabricating a vertical static induction device

Claim 1

A method of fabricating a vertical static induction-type semiconductor device having main electrode regions, a channel region and a gate region, wherein one of the main electrode regions and the gate region are formed on a surface of the channel region, said method comprising the steps of: (a) providing a semiconductor substrate having a first conductivity type and a low resistivity, said semiconductor substrate defining a first main electrode region of the vertical static induction-type semiconductor device; (b) forming a single crystal silicon layer of the first conductivity type and having a high resistivity on a surface of the semiconductor substrate, said single crystal silicon layer defining the channel region of the vertical static induction-type semiconductor device; (c) depositing a polycrystalline silicon film having a lower impurity concentration than that of the channel region on a major surface of said single crystal silicon layer; (d) forming an insulating film comprised of silicon nitride on said polycrystalline film; (e) selectively etching said insulating film for forming islands of the insulating film overlying the portions of the channel region surface at which the gate region and one of the main electrode regions are to be formed; (f) side-etching said polycrystalline film using the island of said insulating film as a mask to narrow the portions of said polycrystalline film overlying the gate region; (g) selectively oxidizing the side-etched polycrystalline film and exposed regions of the channel region surface using the insulating film as a mask; (h) selectively removing portions of the insulating film to form a window through the selectively oxidized oxide on the polycrystalline film overlying the gate region; (i) introducing impurity atoms having a conductivity type opposite that of the channel region through the window in the oxide on the polycrystalline film and into the gate region, the impurity atoms being effective to impart to the gate region a conductivity type opposite that of the channel region, the impurity atoms penetrating the polycrystalline film as they are introduced into the gate region, and the penetration of the polycrystalline film being carried out under conditions effective to oxidize the polycrystalline film; and (j) forming one of the main electrode regions at the surface of the channel region by removing a portion of the insulating film and introducing impurity atoms of the first conductivity type through the polycrystalline film into the surface region of the channel region where the main electrode region is to be formed.

Claim 2

A method of fabricating a vertical static induction-type semiconductor device having main electrode regions, a channel region and a gate region, wherein one of the main electrode regions and the gate region are formed on a surface of the channel region, said method comprising the steps of: (a) providing a semiconductor substrate having a first conductivity type and a low resistivity, said semiconductor substrate defining a first main electrode region of the vertical static induction-type semiconductor device; (b) forming a single crystal silicon layer of the first conductivity type and having a high resistivity on a surface of the semiconductor substrate, said single crystal silicon layer defining the channel region of the vertical static induction-type semiconductor device; (c) depositing a polycrystalline silicon film having a lower impurity concentration than that of the channel region on a major surface of said single crystal silicon layer; (d) forming an insulating film comprised of silicon nitride on said polycrystalline film; (e) selectively etching said insulating film for forming islands of the insulating film overlying the portions of the channel region surface at which the gate region and one of the main electrode regions are to be formed; (f) side-etching said polycrystalline film using the island of said insulating film as a mask to narrow the portions of said polycrystalline film overlying the gate region; (g) selectively oxidizing the side-etched polycrystalline film and exposed regions of the channel region surface using the insulating film as a mask; (h) selectively removing portions of the insulating film to form a window through the selectively oxidized oxide on the polycrystalline film overlying the gate region; (i) introducing impurity atoms having a conductivity type opposite that of the channel region through the window in the oxide on the polycrystalline film and into the gate region, the impurity atoms being effective to impart to the gate region a conductivity type opposite that of the channel region, the impurity atoms penetrating the polycrystalline film as they are introduced into the gate region, and the penetration of the polycrystalline film being carried out under conditions effective to oxidize the polycrystalline film; and (j) forming one of the main electrode regions at the surface of the channel region by removing a portion of the insulating film and introducing impurity atoms of the first conductivity type through the polycrystalline film into the surface region of the channel region where the main electrode region is to be formed.