Patent US2011781A successfully refreshed from Google Patents.
Patent US4350976A successfully refreshed from Google Patents.
← Back to Patent Explorer
US4350976A Expired / Lapsed US ⏱️ 0.0 years remaining

Charge-transfer coded-voltage generator for use in analog-digital coders and decoders

Assignee: Thales SA
•
Filing: 1980-12-10
•
Granted: 1982-09-21
•
Expires: 2000-12-10
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract Successive two-trip traversals of charges between gates G 0 and G 2 make it possible to obtain beneath gates G 1 and G 2 quantities of charges equal to Q R , Q R /2, Q R /2 2 . . . Q R /2 i . A readout device for reading charges and connected to gates G 2 and G 4 generates voltages V R and V Ri =a 0 ·V R +a 1 ·V R /2+ . . . +a i-1 ·V R /2 i-1 +V R /2 i which are compared with a voltage sample V x to be coded in order to determine by successive approximations the coefficients a 0 . . . a n which are equal to 0 or to 1 such that V x =a 0 ·V R +a 1 ·V R /2+ . . . +a n ·V R /2 n . Depending on the value of a i , each quantity of charges Q R /2 i stored beneath gate G 1 is removed beneath diode D e or stored beneath gate G 3 and then transferred beneath gate G 4 .

Inventors

  • 👤 Roger Benoit-Gonin
  • 👤 Jean L. Berger
  • 👤 Jean L. Coutures

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 19:22
CPC Classifications
H; H03; H03M; H03M1/00; H03M1/12; H03M1/14

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 625 words
A charge-transfer coded-voltage generator for generating the voltages V.sub.R,V.sub.Ri =a.sub.o V.sub.R +a.sub.1 ·V.sub.R /2+a.sub.2 ·V.sub.R /2.sup.2 + . . . +a.sub.i-1 ·V.sub.R /2.sup.i-1 +V.sub.R /2.sup.i, where V R is a reference voltage and where i=1 . . . n and in which said voltages make it possible by comparison with a voltage V x to determine by successive approximations the coefficients a o . . . a n which are equal to 0 or to 1 and such that V x =a o V R +a 1 ·V R /2+a 2 ·V R /2 2 . . . +a i V R /2 i + . . . +a n ·V R /2 n or alternatively for generating the voltage V x =a o V R +a 1 ·V R /2+a 2 ·V R /2 2 + . . . +a i ·V R /2 i + . . . +a n ·V R /2 n in the event that the coefficients a o . . . a n are known, wherein said generator is constituted by a charge-transfer device comprising an alternate arrangement of storage gates and transfer gates together with: a diode D e placed at one end of the active region in which transfer and storage of charges take place, the function of said diode being to inject a reference quantity of charges 2Q R at the beginning of processing of each sample V x or of each series a o . . . a n as well as to effect removal of surplus charges during the processing operation; an insulating diffusion which divides into two equal parts the charges originating from a storage gate G o located near the diode D e and which divides the active region into two parallel channels downstream of the gate G o ; in one channel, a storage gate G 2 beneath which the quantities of charges Q R , Q R /2 . . . Q R /2 i . . . are stored by successive two-trip traversals between gates G o and G 2 ; in the other channel, three storage gates G 1 , G 3 and G 4 , the quantity of charges Q R /2 i stored beneath gate G 1 and originating from gate G o being transferred beneath said gate G o and then removed beneath the diode D e when a i is zero in respect of i=0 . . . n and being transferred beneath gate G 3 when a i is equal to 1; when the coefficients a o . . . a n are unknown, a charge-reading device connected to gates G 2 and G 4 and adapted to generate the reference voltage V R at the time of transfer of the quantity of charges Q R beneath gate G 2 , thus permitting determination of a o by comparison of the voltage V R with the voltage V x , then to generate V R1 =a o V R +V R /2 at the time of transfer of the quantity Q R /2 beneath gate G 2 and, if a o =1, at the time of any subsequent transfer of Q R from gate G 3 to gate G 4 , thus permitting determination of a 1 by comparison of the voltage V R1 with the voltage V x , and so on until generation of V Rn and determination of a n or, when the coefficients a o . . . a n are known, a charge-reading device connected to the gate G 4 for generating the voltage V x by transfer of charges from gate G 3 to gate G 4 when the n coefficients of V x have been processed.
Claim 2
Dependent Claim 625 words
A charge-transfer coded-voltage generator for generating the voltages V.sub.R,V.sub.Ri =a.sub.o V.sub.R +a.sub.1 ·V.sub.R /2+a.sub.2 ·V.sub.R /2.sup.2 + . . . +a.sub.i-1 ·V.sub.R /2.sup.i-1 +V.sub.R /2.sup.i, where V R is a reference voltage and where i=1 . . . n and in which said voltages make it possible by comparison with a voltage V x to determine by successive approximations the coefficients a o . . . a n which are equal to 0 or to 1 and such that V x =a o V R +a 1 ·V R /2+a 2 ·V R /2 2 . . . +a i V R /2 i + . . . +a n ·V R /2 n or alternatively for generating the voltage V x =a o V R +a 1 ·V R /2+a 2 ·V R /2 2 + . . . +a i ·V R /2 i + . . . +a n ·V R /2 n in the event that the coefficients a o . . . a n are known, wherein said generator is constituted by a charge-transfer device comprising an alternate arrangement of storage gates and transfer gates together with: a diode D e placed at one end of the active region in which transfer and storage of charges take place, the function of said diode being to inject a reference quantity of charges 2Q R at the beginning of processing of each sample V x or of each series a o . . . a n as well as to effect removal of surplus charges during the processing operation; an insulating diffusion which divides into two equal parts the charges originating from a storage gate G o located near the diode D e and which divides the active region into two parallel channels downstream of the gate G o ; in one channel, a storage gate G 2 beneath which the quantities of charges Q R , Q R /2 . . . Q R /2 i . . . are stored by successive two-trip traversals between gates G o and G 2 ; in the other channel, three storage gates G 1 , G 3 and G 4 , the quantity of charges Q R /2 i stored beneath gate G 1 and originating from gate G o being transferred beneath said gate G o and then removed beneath the diode D e when a i is zero in respect of i=0 . . . n and being transferred beneath gate G 3 when a i is equal to 1; when the coefficients a o . . . a n are unknown, a charge-reading device connected to gates G 2 and G 4 and adapted to generate the reference voltage V R at the time of transfer of the quantity of charges Q R beneath gate G 2 , thus permitting determination of a o by comparison of the voltage V R with the voltage V x , then to generate V R1 =a o V R +V R /2 at the time of transfer of the quantity Q R /2 beneath gate G 2 and, if a o =1, at the time of any subsequent transfer of Q R from gate G 3 to gate G 4 , thus permitting determination of a 1 by comparison of the voltage V R1 with the voltage V x , and so on until generation of V Rn and determination of a n or, when the coefficients a o . . . a n are known, a charge-reading device connected to the gate G 4 for generating the voltage V x by transfer of charges from gate G 3 to gate G 4 when the n coefficients of V x have been processed.
Claim 3
Dependent Claim 34 words
A generator according to claim 1, wherein the surface area of the gates G 1 and G 2 is one-half of the area of gates G o , G 3 and G 4 .
Claim 4
Dependent Claim 15 words
A generator according to claim 1 wherein the two parallel channels have the same width.
Claim 5
Dependent Claim 122 words
A generator according to claim 1, wherein the diode D e is followed by a pair of gates consisting of a transfer electrode T o and a storage electrode G e to which the same voltage (V GE ) is applied, the implantation beneath the transfer electrode T o being adapted to ensure that the curves of surface potential as a function of the voltage of said pair of gates are parallel and the diode D e being successively brought to a low level which permits transfer of charges from the diode D e beneath the gates T o and G e then to a high level which permits storage of the quantity of charges 2Q R beneath gate G e .
Claim 6
Dependent Claim 42 words
A generator according to claim 1, wherein a diode (D c ) is provided in one of the channels downstream of the storage gate G 4 and permits removal of charges stored beneath gate G 4 on completion of the processing operation.
Claim 7
Dependent Claim 88 words
A generator according to claim 1, wherein the width of the storage gate G o at right angles to the direction of charge transfer is of sufficient value to permit division of charges stored beneath the gate G o into two equal parts with a high degree of accuracy and a diffused region of opposite type with respect to the substrate is provided over the entire width of the gate G o in order to reduce the time of distribution of charges beneath said gate G o .
Claim 8
Dependent Claim 179 words
A generator according to claim 1, in which the voltage V x is available and the coefficients a o . . . a n are unknown, wherein said generator comprises an injection diode D e ' which is identical with the diode D e and followed by a pair of gates consisting of a transfer electrode T o ' and of a storage electrode G e ' which is identical with the pair T o -G e , the diode D e ' being successively brought to a low level and to a high level, the gate T o ' being brought to the potential V GE and the potential V x being applied to the gate G e ', the charges injected beneath gate G e ' being read-out by a device which is identical with the device connected to gates G 2 and G 4 , the result of said readout being compared with the readout performed beneath gates G 2 and G 4 for determination of the coefficients a o . . . a n .
Claim 9
Dependent Claim 124 words
A generator according to claim 7, wherein the voltage V x applied to gate G e ' varies between V o and V o +V Ge and the quantity of charges injected beneath gate G e ' varies between Q o and Q o +2Q R , a quantity of charges equal to Q o being added to the charges which arrive beneath the gates G 2 and G 4 by means of a storage gate G o " which is connected to the point P and beneath which a quantity of charges Q o is injected by means of an injection device, said device being identical with the device which generates the quantities of charges Q o +Q x and 2Q R .
Claim 10
Dependent Claim 49 words
A generator according to claim 7 wherein, the voltage V x being negative, said voltage V x or the voltages V R , V Ri are reversed in sign by a differential stage before making a comparison between the voltages V x and V R , V Ri .

References Cited (Backward Citations)

US3836906A Cited
US3906488A Cited
US4145689A Cited
US4087812A Cited
FR2336834B1 Cited
US4099175A Cited
US4206446A Cited
US4306221A Cited
US4213120A Cited
US4164734A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1985-09-20 1986-03-22 1986-09-21 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1989-09-20 1990-03-22 1990-09-21 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1993-09-20 1994-03-22 1994-09-21 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag