Charge-coupled analog-to-digital converter

Claim 2

A circuit for generating a digital representation of the difference between two analog signals comprising in combination: (a) a semiconductor charge storage medium; (b) an insulating layer covering at least one surface of said medium; (c) two parallel signal channels defined by means forming a rectangular charge barrier from which there extends a partition region, said signal channels including signal input means for injecting and storing signal charges in said signal channels; (d) a reference channel defined by said rectangular charge barrier means, facing said signal channels, including reference signal input means for injecting reference signal charges in said reference channel, said reference channel directing reference charges toward said partition, said partition causing said reference channel to split into two reference charge inlet channels of equal magnitude; (e) a plurality of electrodes supported over each of said channels; (f) means disposed between said inlet channels and said signal channels for sensing reference and signal charge magnitudes disposed in said channels; (g) means, including certain of said plurality of electrodes, and also including a first source of control voltages, for shifting said signal charges from each of said signal channels to a respective one of said signal sensing means and holding said charges there; (h) dividing means for shifting during each of a series of periodically recurring time periods, half of the charge stores in said reference inlet channel into a selected one of said sensing means, said dividing means including (1) two gating electrodes, each disposed over a respective one of said equally sized inlet channels, and (2) a second source of control voltages for applying potentials to said gating electrodes disposed over said inlet channels so as to block the flow of charge through one of said inlet channels while causing charge to go through the other of said inlet channels, said second source of control voltage being operative first to create a potential well under the gating electrode which extends over the blocked one of said inlets so as to cause half of the charge in said reference channel to be captured in said potential well while permitting the other half of said charge to flow through the other one of said inlet channels and then to create a potential gradient causing said captured half of said charge to return to said reference channel; (i) means disposed between said gating electrodes and said sensing means for establishing an appropriate potential level in said semiconductor storage medium for transferring charges gated through the selected one of said gating electrodes to said sensing means; and (j) control means coupled between said sensing means and said gating electrodes for causing said dividing means to shift charge to said selected one of said signal channels in response to the relative charge magnitude sensed by the said sensing means.

Claim 3

The combination of claim 1 wherein said sensing means includes: diffusions disposed in said semiconductor charge storage medium; and input circuits connected to said diffusions for reflecting the magnitude of charge stored under each of said diffusions.

Claim 4

The combination of claim 1 wherein said control means is a bistable latch operative to assume a respective one of its two stable states in response to a respective one of said charge magnitudes sensed by said sensing means being larger than the other of said charge magnitudes.

Claim 5

A circuit for generating a digital representation of the difference between two analog signals comprising in combination: (a) a semiconductor charge storage medium; (b) an insulating layer covering at least one surface of said medium; (c) a channel stopping region in said charge storage medium enclosing an elongated rectangular field in said surface, said channel stopping region including a partition extending centrally from one end of said field toward, but short of, the other end of said field so as to divide part of said field into parallel strips closed at one end and open at the other end; (d) two parallel signal channels defined by said parallel strips, said signal channels including signal input means near the closed end of said channels for injecting signal charges into said signal channels; (e) a reference channel facing said signal channels and defined by the other end of said field, said reference channel including reference signal input means for injecting and storing a reference input charge packet in said reference channel, said reference channel splitting into two equally sized reference charge inlet channels formed at the open ends of said parallel strips, each said inlet channel merging with a respective one of said signal channels; (f) means disposed in each of said parallel strips between the reference inlet and signal channels for sensing the combined magnitude of signal and reference charges applied thereto; (g) a plurality of electrodes spanning the width of said field and extending from near one of its ends to near the opposite of its ends; (h) a first source of control voltages connected to those of said plurality of electrodes disposed over said reference channel for propagating reference charges toward the tip of said partition, into said reference charge inlet channels and to said sensing means; (i) a second source of control voltages connected to those of said plurality of electrodes extending over said parallel signal channels for shifting said signal charges from said signal input means toward said signal sensing means and holding said charges there; (j) dividing means for shifting during each of a series of periodically recurring time periods, half of the charge stored in said reference channel to a selected one of said signal charge magnitude sensing means, said dividing means including (1) two gate electrodes, each disposed over a respective one of said equally sized inlet channels, and (2) a third source of control voltages for applying potentials to said gating electrodes disposed over said inlet channels so as to block the flow of charge through one of said inlet channels while causing charge to go through the other of said inlet channels, said third source of control voltage being operative first to create a potential well under the gating electrode which extends over the blocked one of said inlets so as to cause half of the charge in said reference channel to be captured in said potential well while permitting the other half of said charge to flow through the other one of said inlet channels and then to create a potential gradient causing said captured half of said charge to return to said reference channel; (k) means disposed between said gating electrodes and said sensing means for establishing an appropriate potential level in said semiconductor storage medium for transferring charges gated through a selected one of said gating electrodes to an adjacent one of said sensing means; and (l) control means coupled between said sensing means and said gating electrodes for causing said dividing means to shift charge to said selected one of said sensing means in response to the relative combined charge magnitudes sensed by the said sensing means whereby a plural bit digital output signal is generated, one bit for each such sequence.

Claim 6

A circuit for generating a digital representation of the difference between two analog signals comprising in combination: (a) a semiconductor charge storage medium; (b) an insulating layer covering at least one surface of said medium; (c) a channel stopping region in said charge storage medium enclosing an elongated rectangular field in said surface, said channel stopping region including a partition extending centrally from one end of said field toward, but short of, the other end of said field so as to divide part of said field into parallel strips closed at one end and open at the other end; (d) two parallel signal channels defined by said parallel strips, said signal channels including signal input means near the closed end of said channels for injecting signal charges into said signal channels; (e) a reference channel facing said signal channels and defined by the other end of said field, said reference channel including reference signal input means for injecting and storing a reference input charge packet in said reference channel, said reference channel splitting into two equally sized reference charge inlet channels formed at the open ends of said parallel strips, each said inlet channel merging with a respective one of said signal channels; (f) means disposed in each of said parallel strips between the reference inlet and signal channels for sensing the combined magnitude of signal and reference charges applied thereto; (g) a plurality of electrodes spanning the width of said field and extending from near one of its ends to near the opposite of its ends; (h) a first source of control voltages connected to those of said plurality of electrodes disposed over said reference channel for propagating reference charges toward the tip of said partition, into said reference charge inlet channels and to said sensing means; (i) a second source of control voltages connected to those of said plurality of electrodes extending over said parallel signal channels for shifting said signal charges from said signal input means toward said signal sensing means and holding said charges there; (j) dividing means for shifting during each of a series of periodically recurring time periods, half of the charge stored in said reference channel to a selected one of said signal charge magnitude sensing means, said dividing means including (1) two gate electrodes, each disposed over a respective one of said equally sized inlet channels, and (2) a third source of control voltages for applying potentials to said gating electrodes disposed over said inlet channels so as to block the flow of charge through one of said inlet channels while causing charge to go through the other of said inlet channels, said third source of control voltage being operative first to create a potential well under the gating electrode which extends over the blocked one of said inlets so as to cause half of the charge in said reference channel to be captured in said potential well while permitting the other half of said charge to flow through the other one of said inlet channels and then to create a potential gradient causing said captured half of said charge to return to said reference channel; (k) means disposed between said gating electrodes and said sensing means for establishing an appropriate potential level in said semiconductor storage medium for transferring charges gated through a selected one of said gating electrodes to an adjacent one of said sensing means; and (l) control means coupled between said sensing means and said gating electrodes for causing said dividing means to shift charge to said selected one of said sensing means in response to the relative combined charge magnitudes sensed by the said sensing means whereby a plural bit digital output signal is generated, one bit for each such sequence.