Etching method using a hardened PVA stencil

Claim 2

In a method of etching a metal body including producing a stencil of a light-hardened poly(vinyl alcohol-acetate) on a surface of said body, baking said stencil to improve the resistance thereof to liquid etchant, etching said surface through said stencil with said etchant, baking said stencil after said etching and then removing said stencil from said surface, the improvement comprising constituting said stencil by light-hardening selected portions of a film consisting essentially of a dichromate-sensitized poly(vinyl alcohol-acetate) that is about 85% to 97% hydrolyzed and has a molecular weight of about 75,000 to 100,000, and then selectively removing the substantially nonhardened portions of said film.

Claim 3

The method defined in claim 1 wherein said film contains about 3 to 15 weight percent of alkali dichromate.

Claim 4

The method defined in claim 1 wherein said stencil is baked at about 200° C. to 240° C. prior to said etching step.

Claim 5

The method defined in claim 1 wherein the baking of said stencil, after said etching step, is limited to temperatures of less than 200° C.

Claim 6

The method defined in claim 1 wherein during the step of removing said stencil, said stencil is contacted with a dilute aqueous solution of alkali for about 1 to 10 minutes.

Claim 7

In a method of etching selected areas of a surface of a metal body including producing an etch-resistant stencil of light-hardened PVA on said surface, baking said stencil to improve the resistance of said stencil to attack by liquid acid, etching said surface by contacting said baked stencil and said surface with said liquid acid until said selective etching is achieved, baking said stencil after said etching and then removing said stencil from said surface, the improvement comprising producing said stencil by light hardening selected portions of a film consisting essentially of dichromate-sensitized PVA that is about 85% to 97% hydrolyzed and has a molecular weight of about 75,000 to 100,000 and then removing the nonselected film portions while retaining said selected film portions in place, and wherein the baking of said stencil after said selective etching is limited to temperatures of less than 200° C.

Claim 8

In a method of etching selected areas of a surface of a metal body including producing an etch-resistant stencil of light-hardened PVA on said surface, baking said stencil to improve the resistance of said stencil to attack by liquid acid, etching said surface by contacting said baked stencil and said surface with said liquid acid until said selective etching is achieved, baking said stencil after said etching and then removing said stencil from said surface, the improvement comprising producing said stencil by light hardening selected portions of a film consisting essentially of dichromate-sensitized PVA that is about 85% to 97% hydrolyzed and has a molecular weight of about 75,000 to 100,000 and then removing the nonselected film portions while retaining said selected film portions in place, and wherein the baking of said stencil after said selective etching is limited to temperatures of less than 200° C.

Claim 9

The method defined in claim 6 wherein said body is a metal strip or plate having two opposed major surfaces and dimensionally-related stencils are produced on both major surfaces.

Claim 10

The method defined in claim 6 wherein said stencil is prepared by selectively light hardening and developing a coating consisting essentially of PVA and sodium dichromate present in weight ratio range of 85/15 to 95/5 respectively.

Claim 11

The method defined in claim 6 wherein, prior to said etching step, said stencil is baked at about 200° C. for about 5 minutes to improve the resistance thereof to attack by aqueous inorganic acid.

Claim 12

The method defined in claim 6 wherein, after said etching step, the temperature of said stencil is maintained below 200° C., and said stencil is contacted with a dilute aqueous alkali hydroxide solution having a temperature of about 75° C. to 85° C.