US4335504A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making CMOS devices
Assignee: Conexant Systems LLC
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Filing: 1980-09-24
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Granted: 1982-06-22
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Expires: 2000-09-24
Abstract
Abstract A method of making complementary n-channel and p-channel metal oxide semiconductor (CMOS) device pairs in a common insulatively supported semiconductor layer, including simultaneously converting by exposure to an ion beam adjacently arranged complementary regions in different members of a device pair in said layer from a first to a second conductivity type.
Inventors
- 👤 Steven N. Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 23:24
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/03; Y; Y10; Y10S; Y10S148/00; Y10S148/106; Y10S148/15; Y10S257/00; Y10S257/906
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
53 words
A method of making complementary n-channel and p-channel metal oxide semiconductor (CMOS) device pairs in a common insulatively supported semiconductor layer, including simultaneously converting by exposure to a conductivity-type-determining ion beam adjacently arranged complementary regions in different members of a device pair in said layer from a first to a second conductivity type.
Claim 2
Independent Claim
53 words
A method of making complementary n-channel and p-channel metal oxide semiconductor (CMOS) device pairs in a common insulatively supported semiconductor layer, including simultaneously converting by exposure to a conductivity-type-determining ion beam adjacently arranged complementary regions in different members of a device pair in said layer from a first to a second conductivity type.
Claim 3
Dependent Claim
14 words
The method according to claim 1, including also providing silicon as said semiconductor layer.
Claim 4
Dependent Claim
17 words
The method according to claim 1, including also providing n conductivity type silicon as said semiconductor layer.
Claim 5
Dependent Claim
17 words
The method according to claim 3, including also converting said regions from n to p conductivity type.
Claim 6
Dependent Claim
17 words
The method according to claim 1 including also providing p conductivity type silicon as said semiconductor layer.
Claim 7
Dependent Claim
17 words
The method according to claim 5, including also converting said regions from p to n conductivity type.
Claim 8
Independent Claim
87 words
A method of making complementary n-channel and p-channel metal oxide semiconductor (CMOS) device pairs from an insulatively supported semiconductor layer of a first conductivity type, including simultaneously exposing all selected regions of a CMOS device pair defined by a common ion implant mask and having a second conductivity type in the final device pair configuration different from said first conductivity type to a second conductivity-type-determining ion beam for effecting a conversion through the thickness of said semiconductor layer regions from said first to said second conductivity type.
Claim 9
Independent Claim
87 words
A method of making complementary n-channel and p-channel metal oxide semiconductor (CMOS) device pairs from an insulatively supported semiconductor layer of a first conductivity type, including simultaneously exposing all selected regions of a CMOS device pair defined by a common ion implant mask and having a second conductivity type in the final device pair configuration different from said first conductivity type to a second conductivity-type-determining ion beam for effecting a conversion through the thickness of said semiconductor layer regions from said first to said second conductivity type.
Claim 10
Dependent Claim
15 words
The method according to claim 7, including also insulatively supporting said semiconductor layer on sapphire.
Claim 11
Dependent Claim
14 words
The method according to claim 8, including also providing silicon as said semiconductor layer.
Claim 12
Dependent Claim
17 words
The method according to claim 9, including also providing n conductivity type silicon as said silicon layer.
Claim 13
Dependent Claim
23 words
The method according to claim 10, including also converting said selected regions of said n conductivity type silicon layer to p conductivity type.
Claim 14
Dependent Claim
15 words
The method according to claim 11, including also implanting boron ion to effect said conversion
Claim 15
Dependent Claim
17 words
The method according to claim 9, including also providing p conductivity type silicon as said silicon layer.
Claim 16
Dependent Claim
23 words
The method according to claim 13, including also converting said selected regions of said p conductivity type silicon layer to n conductivity type.
Claim 17
Dependent Claim
15 words
The method according to claim 14, including also implanting phosphorous ion to effect said conversion.
Claim 18
Dependent Claim
15 words
The method according to claim 14, including also implanting arsenic ion to effect said conversion.
Claim 19
Dependent Claim
107 words
In a method of making complementary n-channel and p-channel metal oxide semiconductor (CMOS) device pair from an insulatively supported extrinsic semiconductor layer of a first conductivity type which includes exposing selected regions of a CMOS device pair having a second and opposite conductivity type in the final device configuration as defined by an ion implant mask to a second conductivity type-determining ion beam to effect conversion through the thickness of said semiconductor layer in said exposed regions, the improvement including simultaneously exposing said selected regions to be converted as defined by said ion implant mask to said ion beam at the channel implant stage of said method.
Claim 20
Dependent Claim
107 words
In a method of making complementary n-channel and p-channel metal oxide semiconductor (CMOS) device pair from an insulatively supported extrinsic semiconductor layer of a first conductivity type which includes exposing selected regions of a CMOS device pair having a second and opposite conductivity type in the final device configuration as defined by an ion implant mask to a second conductivity type-determining ion beam to effect conversion through the thickness of said semiconductor layer in said exposed regions, the improvement including simultaneously exposing said selected regions to be converted as defined by said ion implant mask to said ion beam at the channel implant stage of said method.
References Cited (Backward Citations)
US3875656A
Cited
US3928081A
Cited
US3982967A
Cited
US4050965A
Cited
US4183134A
Cited
US4280272A
Cited
US4224088A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-06-21 | 1985-12-21 | 1986-06-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-06-21 | 1989-12-21 | 1990-06-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-06-21 | 1993-12-21 | 1994-06-22 | $7700.00 | Window Closed / Lapsed |