US4333100A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Aluminum Schottky contacts and silicon-aluminum interconnects for integrated circuits
Assignee: Harris Corp
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Filing: 1978-05-31
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Granted: 1982-06-01
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Expires: 1998-05-31
Abstract
Abstract A silicon substrate integrated circuit having a layer of aluminum forming Schottky contacts with lightly doped N conductivity regions and silicon doped aluminum forming ohmic contacts to heavily doped N conductivity regions and forming interconnects between contacts.
Inventors
- 👤 William R. Morcom
- 👤 Hugh C. Nicolay
- 👤 Jeffrey D. Peters
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:02
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/64; H10D62/00; H10D62/80; H10D62/83; H10D64/62
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
143 words
An integrated circuit comprising: a silicon wafer coated on one surface with a silicon oxide; heavily doped N conductivity type regions in said surface having a depth of less than one micron; lightly doped N conductivity type regions in said surface; P conductivity type regions in said surface; Schottky contacts to a portion of selected lightly doped N conductivity type regions through apertures in said oxide, each Schottky contact includes a layer of aluminum on said lightly doped N conductivity type regions; ohmic contacts to a portion of selected heavily doped N conductivity type regions through apertures in said oxide, each ohmic contact includes a layer of silicon doped aluminum on said heavily doped N conductivity type region; and interconnects selectively connecting said contacts, said interconnects includes a layer of silicon doped aluminum forming dual layer Schottky contact and single layer ohmic contacts.
Claim 2
Dependent Claim
143 words
An integrated circuit comprising: a silicon wafer coated on one surface with a silicon oxide; heavily doped N conductivity type regions in said surface having a depth of less than one micron; lightly doped N conductivity type regions in said surface; P conductivity type regions in said surface; Schottky contacts to a portion of selected lightly doped N conductivity type regions through apertures in said oxide, each Schottky contact includes a layer of aluminum on said lightly doped N conductivity type regions; ohmic contacts to a portion of selected heavily doped N conductivity type regions through apertures in said oxide, each ohmic contact includes a layer of silicon doped aluminum on said heavily doped N conductivity type region; and interconnects selectively connecting said contacts, said interconnects includes a layer of silicon doped aluminum forming dual layer Schottky contact and single layer ohmic contacts.
Claim 3
Dependent Claim
50 words
The integrated circuit according to claim 1 including ohmic contacts to a portion of selected P conductivity type regions through apertures in said oxide, each ohmic contact includes a layer of silicon doped aluminum or aluminum and said interconnects selectively contact said ohmic contacts to said P conductivity type regions.
Claim 4
Dependent Claim
56 words
The integrated circuit according to claim 1 including a P conductivity type base region formed in a lightly doped N conductivity type collector region, a single layer of aluminum forming an ohmic contact to said base region and a Schottky contact to a surface region of said collector region through a single aperture in said oxide.
Claim 5
Dependent Claim
40 words
The integrated circuit according to claim 3 wherein said surface region of said collector region is encompassed by said base region and said single layer of aluminum contacts said surface region of said collector region and all contigous base regions.
Claim 6
Dependent Claim
40 words
The integrated circuit according to claim 1 wherein said silicon doped aluminum contact layers and said silicon doped aluminum interconnects are a single layer of silicon doped aluminum simultaneously applied to said silicon wafer and patterned to form said interconnects.
Claim 7
Dependent Claim
116 words
An integrated circuit formed in a silicon substrate comprising: an N conductivity type collector region in said substrate being lightly doped; a P conductivity type base region in the surface of said collector region; an N conductivity type emitter region in said base region having a depth of less than one micron; an ohmic base contact on a portion of said base region including a layer of silicon doped aluminum; an ohmic emitter contact including a layer of silicon doped aluminum on a portion of said emitter region; and a Schottky collector contact including a layer of aluminum on a portion of said collector region and a layer of silicon doped aluminum on said aluminum layer.
Claim 8
Dependent Claim
116 words
An integrated circuit formed in a silicon substrate comprising: an N conductivity type collector region in said substrate being lightly doped; a P conductivity type base region in the surface of said collector region; an N conductivity type emitter region in said base region having a depth of less than one micron; an ohmic base contact on a portion of said base region including a layer of silicon doped aluminum; an ohmic emitter contact including a layer of silicon doped aluminum on a portion of said emitter region; and a Schottky collector contact including a layer of aluminum on a portion of said collector region and a layer of silicon doped aluminum on said aluminum layer.
Claim 9
Dependent Claim
39 words
The integrated circuit according to claim 6 including a heavily doped N conductivity type region in said collector region and an ohmic collector contact including a layer of silicon doped aluminum on a portion of said heavily doped region.
Claim 10
Dependent Claim
64 words
The integrated circuit according to claim 6 wherein said base contact and said collector contact includes a common layer of aluminum on contigious portion of said base region and said collector region and a common layer of silicon doped aluminum on said layer of aluminum, said aluminum forming said ohmic base contact and a Schottky diode between said base region and said collector region.
Claim 11
Dependent Claim
39 words
The integrated circuit according to claim 8 wherein said common layer of aluminum extends over all the contiguous portions of base region encompassing the collector Schottky contact region to form a guard ring about the collector Schottky contact region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-05-31 | 1985-11-30 | 1986-06-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-05-31 | 1989-11-30 | 1990-06-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-05-31 | 1993-11-30 | 1994-06-01 | $7700.00 | Window Closed / Lapsed |