Method of and apparatus for testing a memory matrix control character

Claim 2

Apparatus for testing a control character having a predetermined binary code stored in a control zone of an erasable memory matrix, said matrix including a plurality of data storage zones, all of said zones including plural erasable memory cells for binary bit values, the control character being stored in the control zone to assure the integrity of data stored in the data zones of the memory, comprising control means coupled to the memory matrix for reading out the binary values stored in the cells of the control zone and for prohibiting writing binary values into the cells of the control zone, and means responsive to the control means for comparing the bit values read out of the cells in the control zone with predetermined bit values for the control zone cell bit values, the predetermined bit values being dependent upon the predetermined binary code.

Claim 3

The apparatus of claim 1 wherein the memory control means comprises memory addressing means responsive to a memory addressing signal for the memory zones for preventing writing of binary values into any cells of the control zone in response to the addressing signal for the control zone being coupled to the memory addressing means.

Claim 4

The apparatus of claim 1 or 2 wherein each cell of the matrix includes means for storing an electric charge.

Claim 5

The apparatus of claim 1 or 2 wherein each cell of the matrix includes means for storing an electric charge, first and second binary bit values being stored as the presence and absence of charge in each cell.

Claim 8

The apparatus of claim 5 further comprising the step of signalling that the binary bit values stored in the memory are not reliable in response to the comparing step indicating a difference between the read out binary bit values from the cells of the one zone with the predetermined bit sequence.

Claim 9

In combination, an erasable memory matrix, said matrix being divided into a plurality of address zones, each zone including a plurality of cells for storing binary bit values, the zones being arranged so that an undesirable change in bit value in a cell of one zone due to undesirable ambient conditions is likely to be accompanied by an undesirable change in bit value in a cell of other zones, means for writing a predetermined binary bit sequence into the cells of one zone, means for writing in and reading out binary bit values from the cells of the other zones during normal operation of the memory matrix in connection with operation of a data processor and for reading out the binary bit values from the cells of the one zone, means responsive to said last named means for isolating the cells of said one zone during writing of bit values into the memory matrix after the bit sequence has been written into the one zone so that changes in the bit values of the cells in said one zone can occur only in response to the undesirable ambient conditions, and means for comparing the read out binary bit values from the cells of the one zone with the predetermined bit sequence written into the cells of the one zone.

Claim 10

In combination, an erasable memory matrix, said matrix being divided into a plurality of address zones, each zone including a plurality of cells for storing binary bit values, the zones being arranged so that an undesirable change in bit value in a cell of one zone due to undesirable ambient conditions is likely to be accompanied by an undesirable change in bit value in a cell of other zones, means for writing a predetermined binary bit sequence into the cells of one zone, means for writing in and reading out binary bit values from the cells of the other zones during normal operation of the memory matrix in connection with operation of a data processor and for reading out the binary bit values from the cells of the one zone, means responsive to said last named means for isolating the cells of said one zone during writing of bit values into the memory matrix after the bit sequence has been written into the one zone so that changes in the bit values of the cells in said one zone can occur only in response to the undesirable ambient conditions, and means for comparing the read out binary bit values from the cells of the one zone with the predetermined bit sequence written into the cells of the one zone.

Claim 11

The combination of claim 7 wherein the means for comparing includes means for signalling that the binary bit values stored in the memory are not reliable in response to the means for comparing being responsive to a difference between the read out binary bit values from the cells of the one zone relative to the predetermined sequence.

Claim 12

Apparatus for testing an erasable memory matrix to determine if binary bit values stored in the memory are reliable, the memory matrix being divided into a plurality of addressable zones, each zone including a plurality of cells for storing binary bit values, the zones being arranged so that an undesirable change in bit value in a cell of one zone due to undesirable ambient conditions is likely to be accompanied by an undesirable change in bit value in a cell of other zones, comprising addressing means for the binary zones, means for writing a predetermined binary bit sequence into the cells of one zone in response to an address signal for the one zone being supplied to the addressing means, means responsive to a control signal for isolating the addressing means from the cells of said one zone during writing of bit values into the memory matrix after the sequence has been written into the one zone so that changes in the bit values of the cells in said one zone occur only in response to the undesirable ambient conditions, said addressing means enabling writing in and reading out of binary bit values from the cells of the other zones during normal operation of the memory matrix in connection with operation of a data processor and reading out the binary bit values from the cells of the one zone, and means for comparing the binary bit values read out from the cells of the one zone with the predetermined bit sequence written into the cells of the one zone.

Claim 13

Apparatus for testing an erasable memory matrix to determine if binary bit values stored in the memory are reliable, the memory matrix being divided into a plurality of addressable zones, each zone including a plurality of cells for storing binary bit values, the zones being arranged so that an undesirable change in bit value in a cell of one zone due to undesirable ambient conditions is likely to be accompanied by an undesirable change in bit value in a cell of other zones, comprising addressing means for the binary zones, means for writing a predetermined binary bit sequence into the cells of one zone in response to an address signal for the one zone being supplied to the addressing means, means responsive to a control signal for isolating the addressing means from the cells of said one zone during writing of bit values into the memory matrix after the sequence has been written into the one zone so that changes in the bit values of the cells in said one zone occur only in response to the undesirable ambient conditions, said addressing means enabling writing in and reading out of binary bit values from the cells of the other zones during normal operation of the memory matrix in connection with operation of a data processor and reading out the binary bit values from the cells of the one zone, and means for comparing the binary bit values read out from the cells of the one zone with the predetermined bit sequence written into the cells of the one zone.

Claim 14

The apparatus of claim 9 wherein the means for comparing includes means for signalling that the binary bit values stored in the memory are not reliable in response to the means for comparing being responsive to a difference between the read out binary bit values from the cells of the one zone relative to the predetermined sequence.

Claim 15

Apparatus for testing a control character having a predetermined binary code stored in a control zone of an erasable memory, said memory including a plurality of data storage zones, all of said zones including plural erasable memory cells for binary bit values, the control character being stored in the control zone to assure the integrity of data stored in the data zones of the memory, comprising control means coupled to the memory for reading out the binary values stored in the cells of the control zone and for prohibiting writing binary values into the cells of the control zone, and means responsive to the control means for comparing the bit values read out of the cells in the control zone with predetermined bit values for the control zone cell bit values, the predetermined bit values being dependent upon the predetermined binary code.

Claim 16

Apparatus for testing a control character having a predetermined binary code stored in a control zone of an erasable memory, said memory including a plurality of data storage zones, all of said zones including plural erasable memory cells for binary bit values, the control character being stored in the control zone to assure the integrity of data stored in the data zones of the memory, comprising control means coupled to the memory for reading out the binary values stored in the cells of the control zone and for prohibiting writing binary values into the cells of the control zone, and means responsive to the control means for comparing the bit values read out of the cells in the control zone with predetermined bit values for the control zone cell bit values, the predetermined bit values being dependent upon the predetermined binary code.

Claim 17

The apparatus of claim 11 wherein the memory control means comprises memory addressing means responsive to a memory addressing signal for the memory zones for preventing writing of binary values into any cells of the control zone in response to the addressing signal for the control zone being coupled to the memory addressing means.

Claim 20

The apparatus of claim 13 further comprising the step of signaling that the binary bit values stored in the memory are not reliable in response to the comparing step indicating a difference between the read out binary bit values from the cells of the one zone with the predetermined bit sequence.

Claim 21

In combination, an erasable memory, said memory being divided into a plurality of address zones, each zone including a plurality of cells for storing binary bit values, the zones being arranged so that an undesirable change in bit value in a cell of one zone due to undesirable ambient conditions is likely to be accompanied by an undesirable change in bit value in a cell of other zones, means for writing a predetermined binary bit sequence into the cells of one zone, means for writing in and reading out binary bit values from the cells of the other zones during normal operation of the memory in connection with operation of a data processor and for reading out the binary bit values from the cells of the one zone, means responsive to said last named means for isolating the cells of said one zone during writing of bit values into the memory after the bit sequence has been written into the one zone so that changes in the bit values of the cells in said one zone can occur only in response to the undesirable ambient conditions, and means for comparing the read out binary bit values from the cells of the one zone with the predetermined bit sequence written into the cells of the one zone.

Claim 22

In combination, an erasable memory, said memory being divided into a plurality of address zones, each zone including a plurality of cells for storing binary bit values, the zones being arranged so that an undesirable change in bit value in a cell of one zone due to undesirable ambient conditions is likely to be accompanied by an undesirable change in bit value in a cell of other zones, means for writing a predetermined binary bit sequence into the cells of one zone, means for writing in and reading out binary bit values from the cells of the other zones during normal operation of the memory in connection with operation of a data processor and for reading out the binary bit values from the cells of the one zone, means responsive to said last named means for isolating the cells of said one zone during writing of bit values into the memory after the bit sequence has been written into the one zone so that changes in the bit values of the cells in said one zone can occur only in response to the undesirable ambient conditions, and means for comparing the read out binary bit values from the cells of the one zone with the predetermined bit sequence written into the cells of the one zone.

Claim 23

The combination of claim 15 wherein the means for comparing includes means for signaling that the binary bit values stored in the memory are not reliable in response to the means for comparing being responsive to a difference between the read out binary bit values from the cells of the one zone relative to the predetermined sequence.

Claim 24

Apparatus for testing an erasable memory to determine if binary bit values stored in the memory are reliable, the memory being divided into a plurality of addressable zones, each zone including a plurality of cells for storing binary bit values, the zones being arranged so that an undesirable change in bit values in a cell of one zone due to undesirable ambient conditions is likely to be accompanied by an undesirable change in bit value in a cell of other zones, comprising addressing means for the memory zones, means for writing a predetermined binary bit sequence into the cells of one zone in response to an address signal for the one zone being supplied to the addressing means, means responsive to a control signal for isolating the addressing means from the cells of said one zone during writing of bit values into the memory after the sequence has been written into the one zone so that changes in the bit values of the cells in said one zone occur only in response to the undesirable ambient conditions, said addressing means enabling writing in and reading out of binary bit values from the cells of the other zones during normal operation of the memory in connection with operation of a data processor and reading out the binary bit values from the cells of the one zone, and means for comparing the binary bit values read out from the cells of the one zone with the predetermined bit sequence written into the cells of the one zone.

Claim 25

Apparatus for testing an erasable memory to determine if binary bit values stored in the memory are reliable, the memory being divided into a plurality of addressable zones, each zone including a plurality of cells for storing binary bit values, the zones being arranged so that an undesirable change in bit values in a cell of one zone due to undesirable ambient conditions is likely to be accompanied by an undesirable change in bit value in a cell of other zones, comprising addressing means for the memory zones, means for writing a predetermined binary bit sequence into the cells of one zone in response to an address signal for the one zone being supplied to the addressing means, means responsive to a control signal for isolating the addressing means from the cells of said one zone during writing of bit values into the memory after the sequence has been written into the one zone so that changes in the bit values of the cells in said one zone occur only in response to the undesirable ambient conditions, said addressing means enabling writing in and reading out of binary bit values from the cells of the other zones during normal operation of the memory in connection with operation of a data processor and reading out the binary bit values from the cells of the one zone, and means for comparing the binary bit values read out from the cells of the one zone with the predetermined bit sequence written into the cells of the one zone.

Claim 26

The apparatus of claim 17 wherein the means for comparing includes means for signaling that the binary bit values stored in the memory are not reliable in response to the means for comparing being responsive to a difference between the read out binary bit values from the cells of the one zone relative to the predetermined sequence.