Patent US4316093A successfully refreshed from Google Patents.
US4316093A
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US
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Sub-100A range line width pattern fabrication
Assignee: International Business Machines Corp
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Filing: 1979-10-04
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Granted: 1982-02-16
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Expires: 1999-10-04
Abstract
Abstract Sub-100A line width patterns are formed on a member by electron beam conversion and fixing of a resist that arrives at the reaction zone point by surface migration into a resist pattern of a precise thickness and width while the member rests on an electron backscattering control support.
Inventors
- 👤 Alec N. Broers
- 👤 Jerome J. Cuomo
- 👤 Robert B. Laibowitz
- 👤 Walter W. Molzen, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:44
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2045; G; G03; G03F; G03F7/00; G03F7/0017; G03F7/004; H10P14/00; H10P14/60; H10P14/66; H10P14/668; H10P14/6681; H10P14/68; H10P14/683
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
80 words
Apparatus for forming patterns comprising in combination: an electron backscattering control support having an electron backscattering control workpiece supporting substrate thereon, a controllable beam source of electrons focused on said substrate, electron beam monitoring means operable to sense a change in quantity of electrons passing through said substrate, communication means responsive to said monitor means and operable to control said beam source; and aperture means operable to shield said electron beam monitoring means from electrons deflected by a forming resist.
Claim 2
Dependent Claim
80 words
Apparatus for forming patterns comprising in combination: an electron backscattering control support having an electron backscattering control workpiece supporting substrate thereon, a controllable beam source of electrons focused on said substrate, electron beam monitoring means operable to sense a change in quantity of electrons passing through said substrate, communication means responsive to said monitor means and operable to control said beam source; and aperture means operable to shield said electron beam monitoring means from electrons deflected by a forming resist.
Claim 3
Dependent Claim
34 words
The apparatus of claim 1 wherein said backscattering control support is one of the group of Si, Si 3 N 4 , SiO 2 , Al 2 O 3 , polyimide, collodion and carbon.
Claim 4
Independent Claim
62 words
An apparatus for electron beam exposing a resist in the formation of a pattern, the improvement comprising pattern dimension control comprising a monitor operable to control the electron beam source in response to electrons passing through the member on which the resist is being formed and an apertured shield operable to prevent electrons deflected by the forming resist from reaching said monitor.
Claim 5
Independent Claim
62 words
An apparatus for electron beam exposing a resist in the formation of a pattern, the improvement comprising pattern dimension control comprising a monitor operable to control the electron beam source in response to electrons passing through the member on which the resist is being formed and an apertured shield operable to prevent electrons deflected by the forming resist from reaching said monitor.
References Cited (Backward Citations)
US3549999A
Cited
US3971860A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-02-15 | 1985-08-17 | 1986-02-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-02-15 | 1989-08-17 | 1990-02-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-02-15 | 1993-08-17 | 1994-02-16 | $7700.00 | Window Closed / Lapsed |