Patent US4309657A successfully refreshed from Google Patents.
US4309657A
Expired / Lapsed
US
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Apparatus for analyzing semiconductor memories
Assignee: Unisys Corp
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Filing: 1980-01-09
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Granted: 1982-01-05
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Expires: 2000-01-09
Abstract
Abstract The disclosure is of apparatus for generating raster scans on an oscilloscope combined with an electron microscope used for scanning and examining semiconductor devices. A scanning electron microscope can be operated to generate artificial or induced faults in semiconductor memories, and the raster scanner, in carrying out a scan, will visually display on the oscilloscope natural and artificial or induced faulty locations or cells in semiconductor memories. The semiconductor memory under test is positioned at different locations in the microscope, at each of which an artificial fault is generated until a position is reached, at which the artificial fault coincides, or nearly coincides, with the natural fault location as displayed by the raster scanner. When this is achieved, the electron microscope can then be used to examine the naturally faulty location or cell to determine the reason for the fault.
Inventors
- 👤 James A. Lockhart, Jr.
- 👤 Shung-huei Chang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 22:29
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/28; G01R31/302; G01R31/305; G01R31/307
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
231 words
The method of physically locating and optically examining faulty cells in a semiconductor device by means of a scanning electron microscope comprising the steps of positioning a semiconductor module, including a matrix of cells, at a first viewing position in a scanning electron microscope, electrically scanning and addressing and charging each cell in the semiconductor module and displaying on an oscilloscope the scanned raster of cells and a first faulty cell therein, inducing a fault in a second cell in said module by means of the electron beam of said scanning electron microscope, electrically scanning and addressing each cell in said module and displaying said first and second faulty cells on the oscilloscope, mechanically moving said module in said microscope to a second position which tends to place the point of impingement of the electron beam of said microscope either on or closer to the location of said first faulty cell and inducing a fault in a third cell, electrically scanning and addressing each cell in the semiconductor module and displaying on an oscilloscope the scanned raster and said first and third faulty cells therein, whereby, if said first and third faulty cells coincide in position or are suitably close together as shown by the raster scan on said oscilloscope, then the operator of the microscope can visually inspect the first faulty cell to determine the reason for its being faulty.
Claim 2
Independent Claim
231 words
The method of physically locating and optically examining faulty cells in a semiconductor device by means of a scanning electron microscope comprising the steps of positioning a semiconductor module, including a matrix of cells, at a first viewing position in a scanning electron microscope, electrically scanning and addressing and charging each cell in the semiconductor module and displaying on an oscilloscope the scanned raster of cells and a first faulty cell therein, inducing a fault in a second cell in said module by means of the electron beam of said scanning electron microscope, electrically scanning and addressing each cell in said module and displaying said first and second faulty cells on the oscilloscope, mechanically moving said module in said microscope to a second position which tends to place the point of impingement of the electron beam of said microscope either on or closer to the location of said first faulty cell and inducing a fault in a third cell, electrically scanning and addressing each cell in the semiconductor module and displaying on an oscilloscope the scanned raster and said first and third faulty cells therein, whereby, if said first and third faulty cells coincide in position or are suitably close together as shown by the raster scan on said oscilloscope, then the operator of the microscope can visually inspect the first faulty cell to determine the reason for its being faulty.
References Cited (Backward Citations)
US3549999A
Cited
US4051437A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-01-04 | 1985-07-06 | 1986-01-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-01-04 | 1989-07-06 | 1990-01-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-01-04 | 1993-07-06 | 1994-01-05 | $7700.00 | Window Closed / Lapsed |