Schottky diode FET logic integrated circuit

Claim 2

A Schottky diode, field effect transistor logic integrated circuit comprising: a semiconductor; at least two Schottky barrier switching diodes on said semiconductor, the cathodes of said diodes being connected to a common conductor, and the anodes of said diodes providing separate logic inputs for the integrated circuit; a field-effect transistor (FET) on said semiconductor having a grounded source, a drain which provides a logic output for the integrated circuit, and a gate connected to said common conductor; a bias current means on said semiconductor connected to said common conductor to provide bias current for said diodes, and gate activation current for said FET; and a drain current means on said semiconductor connected to the drain of said FET.

Claim 3

The integrated circuit as claimed in claim 1, wherein said bias current means comprises a shorted-gate, metal-semiconductor FET (MESFET), said shorted-gate MESFET having its source connected to a voltage supply and its drain connected to said common conductor.

Claim 4

The logic circuit as claimed in claim 1, wherein said drain current means comprises a shorted-gate metal-semiconductor FET (MESFET) having its source connected to said drain of said FET and its drain connected to a voltage supply.

Claim 5

The integrated circuit as claimed in claim 1, wherein said FET comprises a metal-semiconductor FET (MESFET).

Claim 6

The integrated circuit as claimed in claim 1, wherein said FET comprises a metal oxide semiconductor FET (MOSFET).

Claim 7

The integrated circuit as claimed in claim 1, wherein said FET comprises a metal-insulator semiconductor FET (MISFET).

Claim 8

The integrated circuit as claimed in claim 1, wherein said FET comprises a depletion mode FET.

Claim 9

The logic circuit as claimed in claim 1, wherein said FET comprises a depletion-enhancement mode FET.

Claim 10

The logic circuit as claimed in claim 1, wherein said FET comprises an enhancement mode FET.

Claim 11

The integrated circuit as claimed in claim 1, wherein said semiconductor comprises gallium arsenide (GaAs).

Claim 12

The integrated circuit as claimed in claim 1, wherein said semiconductor comprises silicon (Si).

Claim 13

The integrated circuit as claimed in claim 1, wherein said semiconductor comprises germanium (Ge).

Claim 14

The integrated circuit as claimed in claim 1, wherein said semiconductor comprises InP.

Claim 15

The integrated circuit as claimed in claim 1, including a Schottky-barrier voltage shift diode on said semiconductor, and wherein said common conductor comprises a first conductor and a second conductor, said switching diode cathodes being connected to said first conductor and said gate of said FET and said bias current means being connected to said second conductor, and wherein said voltage shift diode is connected in series between said first and second conductors with its polarity in the same direction as the polarity of said switching diodes.

Claim 16

The integrated circuit as claimed in claim 14, including at least a second Schottky-barrier voltage shift diode in series with said first mentioned Schottky-barrier voltage shift diode.

Claim 17

A Schottky diode field effect transistor logic integrated circuit comprising: a semi-insulating gallium arsenide (GaAs) substrate; at least two Schottky barrier switching diodes on said substrate, the cathodes of said diodes being connected to a common conductor and the anodes of said diodes providing separate logic inputs for the integrated circiut; a depletion-mode, metal semiconductor field-effect transistor (MESFET) on said substrate, said MESFET having a grounded source, a drain which provides a logic output for the integrated circuit, and a gate connected to said common conductor; a pull down current sink on said substrate connected to said common conductor to provide bias current for said diodes and gate turn off current for said MESFET; and a pull up current source on said semiconductor connected to the drain of said MESFET.

Claim 18

A Schottky diode field effect transistor logic integrated circuit comprising: a semi-insulating gallium arsenide (GaAs) substrate; at least two Schottky barrier switching diodes on said substrate, the cathodes of said diodes being connected to a common conductor and the anodes of said diodes providing separate logic inputs for the integrated circiut; a depletion-mode, metal semiconductor field-effect transistor (MESFET) on said substrate, said MESFET having a grounded source, a drain which provides a logic output for the integrated circuit, and a gate connected to said common conductor; a pull down current sink on said substrate connected to said common conductor to provide bias current for said diodes and gate turn off current for said MESFET; and a pull up current source on said semiconductor connected to the drain of said MESFET.

Claim 19

The integrated circuit as claimed in claim 16, including a Schottky-barrier voltage shift diode, and wherein said common conductor comprises a first conductor and a second conductor, said switching diode outputs being connected to said first conductor and said gate of said MESFET and said pull-down current sink being connected to said second conductor, and wherein said voltage shift diode is connected in series between said first and second conductor with its polarity in the same direction as the polarity of said switching diode.

Claim 20

The integrated circuit as claimed in claim 17, including at least a second Schottky-barrier voltage shift diode in series with said first mentioned Schottky-barrier voltage shift diode.

Claim 21

A Schottky diode, field effect transistor, two-level logic integrated circuit comprising: a semiconductor; a dual-gate field effect transistor (FET) on said semiconductor having a grounded source, a drain which provides a logic output for the integrated circuit, and a first and a second gate; a first conductor on said semiconductor connected to said first gate; a second conductor on said semiconductor connected to said second gate; a first plurality of Schottky barrier switching diodes on said semiconductor, the cathodes of said diodes being connected to said first conductor; a second plurality of Schottky barrier switching diodes on said semiconductor, the cathodes of said diodes being connected to said second conductor; a bias current means on said semiconductor connected to said first and to said second conductors to provide bias current for said diodes and gate activation current for said FET; and a drain current means on said semiconductor connected to the drain of said dual-gate FET.

Claim 22

A Schottky diode, field effect transistor, two-level logic integrated circuit comprising: a semiconductor; a dual-gate field effect transistor (FET) on said semiconductor having a grounded source, a drain which provides a logic output for the integrated circuit, and a first and a second gate; a first conductor on said semiconductor connected to said first gate; a second conductor on said semiconductor connected to said second gate; a first plurality of Schottky barrier switching diodes on said semiconductor, the cathodes of said diodes being connected to said first conductor; a second plurality of Schottky barrier switching diodes on said semiconductor, the cathodes of said diodes being connected to said second conductor; a bias current means on said semiconductor connected to said first and to said second conductors to provide bias current for said diodes and gate activation current for said FET; and a drain current means on said semiconductor connected to the drain of said dual-gate FET.

Claim 23

The two-level logic integrated circuit as claimed in claim 19, wherein said bias current means comprises first and second metal-semiconductor FETs (MESFETs) with their gates shorted and with their sources connected to a voltage supply, the drain of said first MESFET being connected to said first conductor and the drain of said second MESFET being connected to said second conductor.

Claim 24

The two-level logic circuit as claimed in claim 19, wherein said drain current means comprises a shorted-gate metal-semiconductor (FET) (MESFET) having its source connected to said drain of said FET and its drain connected to a voltage supply.

Claim 25

A Schottky diode, field effect transistor, two-level logic integrated circuit comprising: a semiconductor; a first field-effect transistor (FET) on said semiconductor having a source, a gate, and a drain which provides a logic output for the integrated circuit; a second field-effect transistor (FET) on said semiconductor having a grounded source, a gate, and a drain connected to said source of said first FET; a first conductor on said semiconductor connected to said gate of said first FET; a second conductor on said semiconductor connected to said gate of said second FET; a first plurality of Schottky barrier switching diodes on said semiconductor, the cathodes of said diodes being connected to said first conductor; a second plurality of Schottky barrier switching diodes on said semiconductor, the cathodes of said diodes being connected to said second conductor; a bias current means on said semiconductor connected to said first and to said second conductors to provide bias current for said diodes and gate activation current for said first and second FETs; and a drain current means on said semiconductor connected to the drain of said first FET.

Claim 26

A Schottky diode, field effect transistor, two-level logic integrated circuit comprising: a semiconductor; a first field-effect transistor (FET) on said semiconductor having a source, a gate, and a drain which provides a logic output for the integrated circuit; a second field-effect transistor (FET) on said semiconductor having a grounded source, a gate, and a drain connected to said source of said first FET; a first conductor on said semiconductor connected to said gate of said first FET; a second conductor on said semiconductor connected to said gate of said second FET; a first plurality of Schottky barrier switching diodes on said semiconductor, the cathodes of said diodes being connected to said first conductor; a second plurality of Schottky barrier switching diodes on said semiconductor, the cathodes of said diodes being connected to said second conductor; a bias current means on said semiconductor connected to said first and to said second conductors to provide bias current for said diodes and gate activation current for said first and second FETs; and a drain current means on said semiconductor connected to the drain of said first FET.

Claim 27

A Schottky diode, field effect transistor, two-level logic integrated circuit comprising: a semi-insulating gallium arsenide (GaAs) substrate; a dual gate depletion-mode, metal semiconductor field-effect transistor (MESFET) on said substrate having a grounded source, a drain which provides a logic output for the integrated circuit, and a first and a second gate; a first conductor on said substrate connected to said first gate; a second conductor on said substrate connected to said second gate; a first Schottky barrier voltage shift diode on said substrate having its cathode connected to said first conductor; a second Schottky barrier voltage shift diode on said substrate having its cathode connected to said second conductor; a first plurality of Schottky barrier switching diodes on said substrate, the cathodes of said switching diodes being connected to the anode of said first shift diode and the anodes of said switching diodes providing separate logic inputs for the integrated circuit; a second plurality of Schottky barrier switching diodes on said substrate, the cathodes of said switching diodes being connected to the anode of said second shift diode and the anodes of said switching diodes providing separate logic inputs for the integrated circuit; first and second metal-semiconductor FETs (MESFETs) on said substrate with their gates shorted and with their sources connected to a voltage supply, the drain of said first MESFET being connected to said first conductor and the drain of said second MESFET being connected to said second conductor, whereby a bias current is provided for said first and second plurality of switching diodes and a turn-off current is provided for said dual-gate FET; and a third shorted gate metal-semiconductor FET on said substrate having its source connected to said drain of said dual-gated FET and its drain connected to a voltage supply, whereby a pull up current source is provided said dual-gated FET.

Claim 28

A Schottky diode, field effect transistor, two-level logic integrated circuit comprising: a semi-insulating gallium arsenide (GaAs) substrate; a dual gate depletion-mode, metal semiconductor field-effect transistor (MESFET) on said substrate having a grounded source, a drain which provides a logic output for the integrated circuit, and a first and a second gate; a first conductor on said substrate connected to said first gate; a second conductor on said substrate connected to said second gate; a first Schottky barrier voltage shift diode on said substrate having its cathode connected to said first conductor; a second Schottky barrier voltage shift diode on said substrate having its cathode connected to said second conductor; a first plurality of Schottky barrier switching diodes on said substrate, the cathodes of said switching diodes being connected to the anode of said first shift diode and the anodes of said switching diodes providing separate logic inputs for the integrated circuit; a second plurality of Schottky barrier switching diodes on said substrate, the cathodes of said switching diodes being connected to the anode of said second shift diode and the anodes of said switching diodes providing separate logic inputs for the integrated circuit; first and second metal-semiconductor FETs (MESFETs) on said substrate with their gates shorted and with their sources connected to a voltage supply, the drain of said first MESFET being connected to said first conductor and the drain of said second MESFET being connected to said second conductor, whereby a bias current is provided for said first and second plurality of switching diodes and a turn-off current is provided for said dual-gate FET; and a third shorted gate metal-semiconductor FET on said substrate having its source connected to said drain of said dual-gated FET and its drain connected to a voltage supply, whereby a pull up current source is provided said dual-gated FET.

Claim 29

A Schottky diode, field effect transistor, three-level logic integrated circuit comprising: a pair of two-level logic integrated circuits having their logic outputs joined to form a common logic output for said three-level logic integrated circuit, each of said pair comprising: a semiconductor; a dual-gate field-effect transistor (FET) on said semiconductor having a grounded source, a drain which provides a logic output for the integrated circuit, and a first and a second gate; a first conductor on said semiconductor connected to said first gate; a second conductor on said semiconductor connected to said second gate; a first plurality of Schottky barrier switching diodes on said semiconductor, the cathodes of said diodes being connected to said first conductor; a second plurality of Schottky barrier switching diodes on said semiconductor, the cathodes of said diodes being connected to said second conductor; a bias current means on said semiconductor connected to said first and to said second conductors to provide bias current for said diodes and gate activation current for said FET; and a drain current means on said semiconductor connected to the drain of said dual-gate FET.

Claim 30

A Schottky diode, field effect transistor, three-level logic integrated circuit comprising: a pair of two-level logic integrated circuits having their logic outputs joined to form a common logic output for said three-level logic integrated circuit, each of said pair comprising: a semiconductor; a dual-gate field-effect transistor (FET) on said semiconductor having a grounded source, a drain which provides a logic output for the integrated circuit, and a first and a second gate; a first conductor on said semiconductor connected to said first gate; a second conductor on said semiconductor connected to said second gate; a first plurality of Schottky barrier switching diodes on said semiconductor, the cathodes of said diodes being connected to said first conductor; a second plurality of Schottky barrier switching diodes on said semiconductor, the cathodes of said diodes being connected to said second conductor; a bias current means on said semiconductor connected to said first and to said second conductors to provide bias current for said diodes and gate activation current for said FET; and a drain current means on said semiconductor connected to the drain of said dual-gate FET.