US4296424A — Compound semiconductor device having a semiconduc…

Claim 1

Independent Claim 82 words

A compound semiconductor device comprising a functional portion of a compound semiconductor mainly comprising a group III-V compound semiconductor and an electrode portion connected to said semiconductor functional portion, wherein said electrode portion comprises a region of the compound semiconductor in which the material of said compound semiconductor is changed in the solid phase state to cause a change in its energy band structure and is thereby converted to a conductor in ohmic contact with the contiguous portion of the compound semiconductor.

Claim 2

Dependent Claim 82 words

A compound semiconductor device comprising a functional portion of a compound semiconductor mainly comprising a group III-V compound semiconductor and an electrode portion connected to said semiconductor functional portion, wherein said electrode portion comprises a region of the compound semiconductor in which the material of said compound semiconductor is changed in the solid phase state to cause a change in its energy band structure and is thereby converted to a conductor in ohmic contact with the contiguous portion of the compound semiconductor.

Claim 3

Dependent Claim 28 words

A compound semiconductor device according to claim 1 wherein said electrode portion has an alloy state subject to the deformation of crystalline lattice of the compound semiconductor material.

Claim 4

Dependent Claim 33 words

A compound semiconductor device according to claim 1 wherein said electrode portion has an amorphous state resulting from the conversion of solid phase of the compound semiconductor material to act as a conductor.

Claim 5

Dependent Claim 21 words

A compound semiconductor device according to claim 1, 2 or 3 wherein said electrode portion forms an external lead bonding pad.

Claim 6

Dependent Claim 20 words

A compound semiconductor device according to claim 1, 2 or 3 wherein said electrode portion forms a shorting bar electrode.

Claim 7

Dependent Claim 21 words

A compound semiconductor device according to claim 1 wherein said electrode portion comprises external lead connection electrodes and shorting bar electrodes.

Claim 8

Dependent Claim 33 words

A compound semiconductor device according to claim 1, 2, 3 or 6 wherein an external lead connection electrode of said electrode portion is bonded to an lead-out conductor by a conductive polymer adhesive.

Claim 9

Dependent Claim 26 words

A compound semiconductor device according to claim 1, 2, 3 or 6 wherein the thickness of said compound semiconductor portion ranges from 0.1 to 100 μ.

Claim 10

Dependent Claim 25 words

A compound semiconductor device according to claim 1, 2, 3 or 6 wherein said compound semiconductor portion comprises a group III - V compound semiconductor.

Claim 11

Dependent Claim 64 words

An electrode structure for use in a compound semiconductor device including a compound semiconductor layer and a conductive region, said conductive region comprising a material phase-converted region at which said compound semiconductor layer is partly converted to a conductor by the change of its solid phase state by energy irradiation, said conductive region being contiguous to said semiconductor layer and in ohmic contact therewith.

Claim 12

Dependent Claim 64 words

An electrode structure for use in a compound semiconductor device including a compound semiconductor layer and a conductive region, said conductive region comprising a material phase-converted region at which said compound semiconductor layer is partly converted to a conductor by the change of its solid phase state by energy irradiation, said conductive region being contiguous to said semiconductor layer and in ohmic contact therewith.

Claim 13

Dependent Claim 25 words

An electrode structure according to claim 10 wherein said region extends from at least the surface of said semiconductor layer in the thickness direction thereof.

Claim 14

Dependent Claim 37 words

An electrode structure according to claim 10 or 11 wherein the exposed surface of said region provides a bonding area for a lead-out conductor and said region prevents the migration due to bonding of said lead-out conductor.

Claim 15

Dependent Claim 46 words

An InSb thin-film magnetoelectric transducer comprising: a dielectric substrate, an InSb thin-film layer provided on said substrate, and a plurality of electrodes contiguous to and in ohmic contact with said InSb layer, said electrode having a conductive layer made from said InSb layer by energy irradiation.

Claim 16

Dependent Claim 46 words

An InSb thin-film magnetoelectric transducer comprising: a dielectric substrate, an InSb thin-film layer provided on said substrate, and a plurality of electrodes contiguous to and in ohmic contact with said InSb layer, said electrode having a conductive layer made from said InSb layer by energy irradiation.

Claim 17

Dependent Claim 32 words

An electrode structure according to claim 11, wherein said region extends from the surface of said semi-conductor layer in the thickness direction thereof without reaching the opposite surface of said semiconductor layer.

Claim 18

Dependent Claim 25 words

An electrode structure according to claim 10, 11 or 14, wherein said semiconductive layer is formed of a group III-V compound semiconductor, InSbSn or InSb-NiSb.

Claim 19

Dependent Claim 81 words

A conductor structure formed in a compound semiconductor device, comprising: a compound semiconductor layer including therein a functional unit of said device; a conductive region integrated in said compound semiconductor layer in ohmic contact therewith; and wherein said conductive region is formed from a compound semiconductor-converted region in which that portion of said compound semiconductor layer corresponding in position to said conductive region is converted to a conductor due to the change of its solid phase by the application of energy.

Claim 20

Dependent Claim 81 words

A conductor structure formed in a compound semiconductor device, comprising: a compound semiconductor layer including therein a functional unit of said device; a conductive region integrated in said compound semiconductor layer in ohmic contact therewith; and wherein said conductive region is formed from a compound semiconductor-converted region in which that portion of said compound semiconductor layer corresponding in position to said conductive region is converted to a conductor due to the change of its solid phase by the application of energy.

Claim 21

Dependent Claim 17 words

The conductor structure according to claim 16, wherein said conductive region constitutes an electrode for the device.

Claim 22

Dependent Claim 19 words

The conductor structure according to claim 16 or 17, wherein said compound semiconductor is a group III-V compound semiconductor.

Claim 23

Dependent Claim 15 words

The conductor structure according to claim 16 or 17, wherein said compound semiconductor is InSbSn.

Claim 24

Dependent Claim 15 words

The conductor structure according to claim 16 or 17, wherein said compound semiconductor is InSb-NiSb.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1984-10-19	1985-04-20	1985-10-20	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1988-10-19	1989-04-20	1989-10-20	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	1992-10-19	1993-04-20	1993-10-20	$7700.00	Window Closed / Lapsed

Compound semiconductor device having a semiconductor-converted conductive region

Abstract

Inventors

Bibliographic Details

Claims Analysis

References Cited (Backward Citations)

USPTO Annuity & Maintenance Windows

Assigned Categories & Tags

Assign Category Tag