Patent US4292092A successfully refreshed from Google Patents.
US4292092A
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Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery
Assignee: Solarex Corp
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Filing: 1980-06-02
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Granted: 1981-09-29
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Expires: 2000-06-02
Abstract
Abstract A method of fabricating series-connected and tandem junction series-connected solar cells into a solar battery with laser scribing.
Inventors
- 👤 Joseph J. Hanak
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 11:53
CPC Classifications
B; B23; B23K; B23K26/00; B23K26/36; B23K26/362; B23K26/364; B23K26/40; H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F10/172; H10F19/00; H10F19/30; H10F19/31; H10F19/33; H10P; H10P34/00; H10P34/40; H10P34/42; B23K2103/00; B23K2103/16; B23K2103/166; B23K2103/172; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y10; Y10S; Y10S148/00; Y10S148/092; Y10S148/093; Y10S438/00; Y10S438/94
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
92 words
A method of fabricating a solar battery comprising: scribing a transparent electrode on a transparent substrate with a laser of sufficient power to form a plurality of transparent electrode strips; fabricating an active region of a semiconductor material on said substrate and said transparent electrode strips; scribing said active region with a laser parallel and adjacent to the first scribing so as to scribe through said active region and form strips of active region but not the transparent electrode; and interconnecting said strips of active region in series with a back electrode.
Claim 2
Independent Claim
92 words
A method of fabricating a solar battery comprising: scribing a transparent electrode on a transparent substrate with a laser of sufficient power to form a plurality of transparent electrode strips; fabricating an active region of a semiconductor material on said substrate and said transparent electrode strips; scribing said active region with a laser parallel and adjacent to the first scribing so as to scribe through said active region and form strips of active region but not the transparent electrode; and interconnecting said strips of active region in series with a back electrode.
Claim 3
Dependent Claim
49 words
The method according to claim 1 wherein said transparent electrode, said active region, and said back electrode are selected such that the laser requires a greater power to scribe said transparent electrode than said active region and a greater power to scribe said active region than said back electrode.
Claim 4
Dependent Claim
34 words
The method according to claim 2 wherein said active region is a semiconductor material selected from the group consisting of hydrogenated amorphous silicon, evaporated silicon, sputtered silicon, CdS, CdSe, CdTe, and Cu 2 S.
Claim 5
Dependent Claim
18 words
The method according to claim 3 wherein the active region is a plurality of layers of semiconductor material.
Claim 6
Dependent Claim
14 words
The method according to claim 3 wherein the active region is hydrogenated amorphous silicon.
Claim 7
Dependent Claim
25 words
The method according to claim 5 wherein the laser is a continuously excited neodynium YAG laser emitting light of a wavelength of about 1.06 micrometers.
Claim 8
Dependent Claim
23 words
The method according to claim 6 wherein said laser is operated in a Q-switched mode at a repetition rate of about 36 kilohertz.
Claim 9
Dependent Claim
37 words
The method according to claim 7 wherein the scribing is performed by said laser operating at a power of about 4.5 watts to scribe said transparent electrode material, and about 1.7 watts to scribe said active region.
Claim 10
Dependent Claim
19 words
The method according to claim 8 wherein said active region comprises a plurality of layers of hydrogenated amorphous silicon.
Claim 11
Dependent Claim
22 words
The method according to claim 9 wherein each pair of adjacent layers of hydrogenated amorphous silicon are separated by a tunnel junction.
Claim 12
Dependent Claim
13 words
The method according to claim 10 wherein said tunnel junction is a cermet.
Claim 13
Dependent Claim
15 words
The method according to claim 11 wherein said back electrode is fabricated by angle evaporation.
Claim 14
Dependent Claim
45 words
The method according to claim 1 further comprising the fabrication of the back electrode across the strips of active region and the transparent electrode followed by the laser scribing of said back electrode parallel and adjacent to the scribing of said strips of active region.
Claim 15
Dependent Claim
40 words
The method according to claim 13 wherein a laser can scribe said back electrode with a lower power than is required to scribe said active region and said active region requires a lower power for scribing than said transparent electrode.
Claim 16
Dependent Claim
14 words
The method according to claim 14 wherein the active region is hydrogenated amorphous silicon.
Claim 17
Dependent Claim
25 words
The method according to claim 15 wherein the laser is a continuously excited neodynium YAG laser emitting light of a wavelength of about 1.06 micrometers.
Claim 18
Dependent Claim
15 words
The method according to claim 16 wherein said laser is operated in a Q-switched mode.
Claim 19
Dependent Claim
19 words
The method according to claim 17 wherein said active region is a plurality of layers of hydrogenated amorphous silicon.
Claim 20
Dependent Claim
22 words
The method according to claim 18 wherein each pair of adjacent layers of hydrogenated amorphous silicon are separated by a tunnel junction.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-09-28 | 1985-03-30 | 1985-09-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-09-28 | 1989-03-30 | 1989-09-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-09-28 | 1993-03-30 | 1993-09-29 | $7700.00 | Window Closed / Lapsed |