Abstract The specification discloses a process for forming a coherent, uniform oxide layer on the surface of a selected semiconductor material by heating a wafer of the selected semiconductor material at a predetermined elevated temperature in an atmosphere conducive to the formation of atomic oxygen for a period of time sufficient to enable the atomic oxygen to react with the surface atoms of the wafer and thus form the coherent, uniform oxide layer. The predetermined elevated temperature is sufficiently low to avoid adverse effects, such as dopant migration, on the wafer. In a preferred embodiment of the present invention, a coherent, uniform layer of silicon dioxide is formed on the surface of a silicon wafer by heating the wafer in a vapor mixture of iodine and water at a temperature of 750° C. and one atmosphere of pressure.
A process for forming a coherent, uniform oxide layer on the surface of a silicon wafer which comprises: (a) providing said wafer; and (b) heating said wafer at 750° C. in a vapor mixture of predetermined amounts of iodine and water that is conducive to the formation of atomic oxygen for a period of time sufficient to enable said oxygen to react with the surface atoms of said wafer to form said uniform, coherent oxide layer.
Claim 2
Dependent Claim
76 words
A process for forming a coherent, uniform oxide layer on the surface of a silicon wafer which comprises: (a) providing said wafer; and (b) heating said wafer at 750° C. in a vapor mixture of predetermined amounts of iodine and water that is conducive to the formation of atomic oxygen for a period of time sufficient to enable said oxygen to react with the surface atoms of said wafer to form said uniform, coherent oxide layer.
Claim 3
Dependent Claim
35 words
The process as set forth in claim 1 wherein said heating is conducted for a period of 5 hours at one atmosphere pressure and said oxide layer is formed to a thickness of 1500 angstroms.
Claim 4
Dependent Claim
42 words
The process as set forth in claim 1 wherein said wafer is doped with impurities to a predetermined concentration and in a predetermined profile, whereby said predetermined elevated temperature is sufficiently low to suppress movement of said dopants in said semiconductor material.
Claim 5
Dependent Claim
32 words
The process defined in claim 1 wherein said substrate is heated to an elevated temperature of about 750° C. and a pressure of about one atmosphere for about five hours or more.