Patent US5674647A successfully refreshed from Google Patents.
Patent US4253105A successfully refreshed from Google Patents.
US4253105A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor power device incorporating a schottky barrier diode between base and emitter of a PNP device
Assignee: Intersil Corp
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Filing: 1980-07-03
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Granted: 1981-02-24
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Expires: 2000-07-03
Abstract
Abstract A semiconductor power device comprises a semiconductor pellet having first and second opposing major surfaces, including, in series, emitter, base and collector regions forming a PNP transistor. The collector region is substantially planar and adjacent to the second surface; the base region is adjacent to the collector region and extends to the first surface; and the emitter region extends into the pellet from the first surface such that it is substantially surrounded by the base region. The emitter region substantially surrounds a substantially centrally located extension of the base region which also terminates at the first surface. Emitter, base and collector electrodes are ohmically disposed on the respective semiconductor regions and a Schottky barrier contact is formed on the base region extension, the Schottky contact being connected to the emitter electrode.
Inventors
- 👤 John A. Olmstead
- 👤 Sebastian W. Kessler, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 22:56
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/101; H10D84/121; H10D62/00; H10D62/10; H10D62/17; H10D62/177; H10D64/00; H10D64/20; H10D64/23; H10D64/231; Y; Y10; Y10S; Y10S148/00; Y10S148/139
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
140 words
A semiconductor power device, comprising: a semiconductor pellet having first and second opposing major surfaces and including, in series, emitter, base and collector regions forming a PNP transistor; the collector region being substantially planar and adjacent to the second surface; the base region adjacent to the collector region and extending to the first surface; the emitter region extending into the pellet from the first surface and being substantially surrounded by the base region; the emitter region substantially surrounding a substantially centrally located extension of the base region which extends to the first surface; an emitter electrode contacting the emitter region; an electrode forming a Schottky barrier contact to the base region extension on the first surface, said Schottky contact being connected to the emitter electrode; a collector electrode contacting the collector region; and a base electrode contacting the base region.
Claim 2
Dependent Claim
140 words
A semiconductor power device, comprising: a semiconductor pellet having first and second opposing major surfaces and including, in series, emitter, base and collector regions forming a PNP transistor; the collector region being substantially planar and adjacent to the second surface; the base region adjacent to the collector region and extending to the first surface; the emitter region extending into the pellet from the first surface and being substantially surrounded by the base region; the emitter region substantially surrounding a substantially centrally located extension of the base region which extends to the first surface; an emitter electrode contacting the emitter region; an electrode forming a Schottky barrier contact to the base region extension on the first surface, said Schottky contact being connected to the emitter electrode; a collector electrode contacting the collector region; and a base electrode contacting the base region.
Claim 3
Dependent Claim
39 words
A device in accordance with claim 1, wherein the emitter electrode is a substantially continuous layer on the first semiconductor surface, forming an ohmic contact to the emitter region and a Schottky barrier contact to the base region extension.
Claim 4
Dependent Claim
48 words
A device in accordance with claim 1, further comprising: a mesa protruding from the first surface and having a mesa surface, said mesa essentially being an extension of the emitter region and the base region extension; and the emitter electrode and Schottky barrier contact on said mesa surface.
Claim 5
Dependent Claim
38 words
A device in accordance with claim 3, wherein the emitter electrode is a substantially continuous layer on the mesa surface, forming an ohmic contact to the emitter region and a Schottky barrier contact to the base region extension.
Claim 6
Independent Claim
28 words
A device in accordance with claims 1 or 3, wherein a Schottky barrier contact electrode is delineated on the surface of the base region extension by insulating material.
Claim 7
Dependent Claim
21 words
A device in accordance with claim 5, wherein the emitter electrode overlies the Schottky barrier contact electrode and said insulating material.
Claim 8
Independent Claim
18 words
A device in accordance with claims 1 or 3, wherein the emitter region has a substantially rectangular shape.
Claim 9
Dependent Claim
15 words
A device in accordance with claim 7, further comprising an array of said emitter regions.
Claim 10
Independent Claim
23 words
A device in accordance with claims 1 or 3, further comprising a plurality of base region extensions forming a plurality of Schottky contacts.
Claim 11
Dependent Claim
24 words
A device in accordance with claim 9, wherein the base region extensions are located along a first surface center line of the emitter region.
Claim 12
Independent Claim
26 words
A device in accordance with claims 1 or 3, wherein the pellet includes a moat at the periphery of the emitter region at the first surface.
Claim 13
Independent Claim
17 words
A device in accordance with claims 1 or 3, wherein the emitter region has a finger-like shape.
Claim 14
Dependent Claim
21 words
A device in accordance with claim 12, comprising a plurality of finger-like emitter regions radially disposed at the first pellet surface.
References Cited (Backward Citations)
US3358197A
Cited
US3909837A
Cited
US3649883A
Cited
US3740621A
Cited
DE2423114A1
Cited
US3836995A
Cited
US3943554A
Cited
US3936863A
Cited
US4017882A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-02-24 | 1984-08-25 | 1985-02-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-02-24 | 1988-08-25 | 1989-02-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-02-24 | 1992-08-25 | 1993-02-24 | $7700.00 | Window Closed / Lapsed |