Patent US4251287A successfully refreshed from Google Patents.
US4251287A
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Amorphous semiconductor solar cell
Assignee: University of Delaware
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Filing: 1979-10-01
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Granted: 1981-02-17
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Expires: 1999-10-01
Abstract
Abstract A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.
Inventors
- 👤 Vikram L. Dalal
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:16
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F71/00; H10F71/10; H10F71/103; H10F71/128; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S438/00; Y10S438/912
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
115 words
In a method for manufacturing a solar cell wherein a substrate is provided as an ohmic contact and an amorphous semiconductor base layer of n-type conductivity is grown on the substrate and an amorphous semiconductor junction layer of p-type conductivity is deposited on the base layer to form a physical junction therebetween and a further electrical contact is formed on the junction layer, the improvement being incorporating a rapidly diffusing dopant species in said p type junction layer heat treating the physical junction of the base layer and the junction layer to diffuse the dopant species at the physical junction into the base layer to thereby create an electrical junction below the former physical junction.
Claim 2
Dependent Claim
115 words
In a method for manufacturing a solar cell wherein a substrate is provided as an ohmic contact and an amorphous semiconductor base layer of n-type conductivity is grown on the substrate and an amorphous semiconductor junction layer of p-type conductivity is deposited on the base layer to form a physical junction therebetween and a further electrical contact is formed on the junction layer, the improvement being incorporating a rapidly diffusing dopant species in said p type junction layer heat treating the physical junction of the base layer and the junction layer to diffuse the dopant species at the physical junction into the base layer to thereby create an electrical junction below the former physical junction.
Claim 3
Dependent Claim
57 words
In the method of claim 1 wherein the amorphous semiconductor is amorphous silicon containing hydrogen, the p-type junction layer including a dopant species having a higher diffusion coefficient than B, and the heat treating being a diffusion of dopant species at a temperature lower than the temperature at which hydrogen is evolved from the amorphous silicon:H semiconductor.
Claim 4
Dependent Claim
22 words
In the method of claim 2 wherein the heat treating is at a temperature of 300°-400° C. for 30 to 120 minutes.
Claim 5
Dependent Claim
11 words
In the method of claim 3 wherein the dopant is Ga.
Claim 6
Dependent Claim
11 words
In the method of claim 3 wherein the dopant is Al.
Claim 7
Dependent Claim
23 words
In the method of claim 1 wherein the diffusion heat treatment is followed by a lower temperature treatment in a plasma of H.
Claim 8
Dependent Claim
19 words
In the method of claim 7 wherein the lower temperature treatment is at about 350°-400° C. for 30-120 minutes.
Claim 9
Dependent Claim
24 words
In the method of claim 1 wherein the diffusion heat treatment is at a temperature of about 550°-600° C. for 30 to 120 minutes.
Claim 10
Dependent Claim
16 words
In the method of claim 1 wherein the amorphous semiconductor is silicon or an alloy thereof.
Claim 11
Dependent Claim
13 words
In the method of claim 1 wherein the solar cell comprises a homojunction.
Claim 12
Dependent Claim
13 words
In the method of claim 1 wherein the solar cell comprises a heterojunction.
Claim 13
Dependent Claim
21 words
In the method of claim 1 wherein the solar cell includes a stack of amorphous silicon base junctions in sequential array.
Claim 14
Dependent Claim
16 words
In the method of claim 1 wherein the amorphous semiconductor is germanium or an alloy thereof.
Claim 15
Dependent Claim
10 words
A solar cell made by the method of claim 1.
Claim 16
Dependent Claim
115 words
In a method for manufacturing a solar cell wherein a substrate is provided as an ohmic contact and an amorphous semiconductor base layer of p-type conductivity is grown on the substrate and an amorphous semiconductor junction layer of n-type conductivity is deposited on the base layer to form a physical junction therebetween and a further electrical contact is formed on the junction layer, the improvement being incorporating a rapidly diffusing dopant species in said n type junction layer and heat treating the physical junction of the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer to thereby create an electrical junction below the former physical junction.
Claim 17
Dependent Claim
115 words
In a method for manufacturing a solar cell wherein a substrate is provided as an ohmic contact and an amorphous semiconductor base layer of p-type conductivity is grown on the substrate and an amorphous semiconductor junction layer of n-type conductivity is deposited on the base layer to form a physical junction therebetween and a further electrical contact is formed on the junction layer, the improvement being incorporating a rapidly diffusing dopant species in said n type junction layer and heat treating the physical junction of the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer to thereby create an electrical junction below the former physical junction.
Claim 18
Dependent Claim
57 words
In the method of claim 15 wherein the amorphous semiconductor is amorphous silicon containing hydrogen, the n-type junction layer including a dopant species having a higher diffusion coefficient than P, and the heat treating being a diffusion of dopant species at a temperature lower than the temperature at which hydrogen is evolved from the amorphous silicon:H semiconductor.
Claim 19
Dependent Claim
22 words
In the method of claim 16 wherein the heat treating is at a temperature of 300°-400° C. for 30 to 120 minutes.
Claim 20
Dependent Claim
23 words
In the method of claim 15 wherein the diffusion heat treatment is followed by a lower temperature treatment in a plasma of H.
Claim 21
Dependent Claim
21 words
In the method of claim 18 wherein the lower temperature treatment is at about 350°-400° C. for 30 to 120 minutes.
Claim 22
Dependent Claim
24 words
In the method of claim 15 wherein the diffusion heat treatment is at a temperature of about 550°-600° C. for 30 to 120 minutes.
Claim 23
Dependent Claim
16 words
In the method of claim 15 wherein the amorphous semiconductor is silicon or an alloy thereof.
Claim 24
Dependent Claim
13 words
In the method of claim 15 wherein the solar cell comprises a homojunction.
Claim 25
Dependent Claim
13 words
In the method of claim 18 wherein the solar cell comprises a heterojunction.
Claim 26
Dependent Claim
21 words
In the method of claim 15 wherein the solar cell includes a stack of amorphous silicon based junctions in sequential array.
Claim 27
Dependent Claim
16 words
In the method of claim 15 wherein the amorphous semiconductor is germanium or an alloy thereof.
Claim 28
Dependent Claim
10 words
A solar cell made by the method of claim 15.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-02-17 | 1984-08-18 | 1985-02-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-02-17 | 1988-08-18 | 1989-02-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-02-17 | 1992-08-18 | 1993-02-17 | $7700.00 | Window Closed / Lapsed |