Patent US4239584A successfully refreshed from Google Patents.
US4239584A
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Molecular-beam epitaxy system and method including hydrogen treatment
Assignee: International Business Machines Corp
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Filing: 1978-09-29
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Granted: 1980-12-16
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Expires: 1998-09-29
Abstract
Abstract A system and method including the use of hydrogen in the molecular beam evaporation process for epitaxy growth, such as in the formation of GaAs and GaAlAs and Sn for n-type dopant impurity. In a molecular beam epitaxy system, a hydrogen beam introduced and, along with the molecular beam, is directed on the substrate during the epitaxy growth such that the presence of the relatively small volume of hydrogen influences the physical surface properties of the epitaxially grown material and therefore the quality of the epitaxy.
Inventors
- 👤 Chin-An Chang
- 👤 Leroy L. Chang
- 👤 Leo Esaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 14:03
CPC Classifications
C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/40; C30B29/42; Y; Y10; Y10S; Y10S117/00; Y10S117/906; Y10S148/00; Y10S148/06; Y10S148/169
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
137 words
In a molecular-beam epitaxy process for the epitaxial growth of compound semiconductor films in an enclosed vacuum chamber including at least one source material selected from the group comprising gallium, arsenic, aluminum and tin, and a substrate on which the source material is epitaxially grown, the improvement comprising the steps of providing a source of hydrogen, and the step of introducing a controlled relatively low volume of said hydrogen from said hydrogen source through a control valve into said vacuum chamber while said source material is being epitaxially grown on said substrate for changing the physical properties of the surface of said epitaxially grown material on said substrate by combining with and removing any oxygen present on the surface of said epitaxially grown material on said substrate for increasing the adsorption properties of said epitaxially grown material.
Claim 2
Dependent Claim
137 words
In a molecular-beam epitaxy process for the epitaxial growth of compound semiconductor films in an enclosed vacuum chamber including at least one source material selected from the group comprising gallium, arsenic, aluminum and tin, and a substrate on which the source material is epitaxially grown, the improvement comprising the steps of providing a source of hydrogen, and the step of introducing a controlled relatively low volume of said hydrogen from said hydrogen source through a control valve into said vacuum chamber while said source material is being epitaxially grown on said substrate for changing the physical properties of the surface of said epitaxially grown material on said substrate by combining with and removing any oxygen present on the surface of said epitaxially grown material on said substrate for increasing the adsorption properties of said epitaxially grown material.
Claim 3
Dependent Claim
56 words
A molecular-beam epitaxy process according to claim 1 wherein said source material includes Ga having an arrival rate on said substrate of substantially 4×10 14 atoms per square centimeter per second and the flow rate of said hydrogen introduced into said vacuum chamber is between 10 14 to 10 15 molecules per square centimeter per second.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-12-16 | 1984-06-16 | 1984-12-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-12-16 | 1988-06-16 | 1988-12-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-12-16 | 1992-06-16 | 1992-12-16 | $7700.00 | Window Closed / Lapsed |