Method for minimizing autodoping in epitaxial deposition

Abstract

Abstract Autodoping is minimized during the growth of an epitaxial layer on a semiconductor substrate by contacting the substrate with a gaseous reaction mixture at a low pressure, substantially below atmospheric to deposit at least the initial capping layer. The reaction mixture contains a relatively minor portion of a semiconductor compound along with a carrier gas. Subsequently, a second gaseous reaction mixture containing a greater portion of a compound of a semiconductor material may be used to complete the deposition of the epitaxial layer. This is done merely to reduce the total growth cycle.

Inventors

• 👤 V Lyons
• 👤 H Pogge
• 👤 D Boss
• 👤 B Kemlage

Bibliographic Details