US4236831A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor apparatus
Assignee: Honeywell Inc
•
Filing: 1979-07-27
•
Granted: 1980-12-02
•
Expires: 1999-07-27
Abstract
Abstract A semiconductor device is provided having a plurality of photodiodes formed in series by polycrystalline semiconductor material.
Inventors
- 👤 Thomas E. Hendrickson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 07:49
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/107; H10D; H10D88/00; H10F30/00; H10F30/20; H10F30/21; H10F30/28; H10F30/282; H10F39/12; H10F39/18
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
208 words
A semiconductor device having therein a plurality of photodiodes connected in series, said device comprising: a semiconductor material body having a major surface; an insulating means disposed on said semiconductor material body major surface comprising at least a first layer of insulating material having a surface portion; a first polycrystalline semiconductor material layer disposed on said first insulating material layer surface portion, said polycrystalline semiconductor material layer comprising a plurality of regions of a first conductivity type and a plurality of regions of a second conductivity type with members of said first and second pluralities of polycrystalline semiconductor material layer regions alternating in position with one another such that a member from either of said first and second pluralities of polycrystalline semiconductor material layer regions is immediately adjacent to at most a pair of members from the opposite plurality, except for two end members each of which are immediately adjacent to only one member from an opposite plurality, there being a semiconductor pn junction between those said polycrystalline semiconductor material layer regions which are immediately adjacent as aforesaid; and electrical shorting means between each said polycrystalline semiconductor material layer region and at most one of any said polycrystalline semiconductor material layer regions which are immediately adjacent as aforesaid.
Claim 2
Dependent Claim
208 words
A semiconductor device having therein a plurality of photodiodes connected in series, said device comprising: a semiconductor material body having a major surface; an insulating means disposed on said semiconductor material body major surface comprising at least a first layer of insulating material having a surface portion; a first polycrystalline semiconductor material layer disposed on said first insulating material layer surface portion, said polycrystalline semiconductor material layer comprising a plurality of regions of a first conductivity type and a plurality of regions of a second conductivity type with members of said first and second pluralities of polycrystalline semiconductor material layer regions alternating in position with one another such that a member from either of said first and second pluralities of polycrystalline semiconductor material layer regions is immediately adjacent to at most a pair of members from the opposite plurality, except for two end members each of which are immediately adjacent to only one member from an opposite plurality, there being a semiconductor pn junction between those said polycrystalline semiconductor material layer regions which are immediately adjacent as aforesaid; and electrical shorting means between each said polycrystalline semiconductor material layer region and at most one of any said polycrystalline semiconductor material layer regions which are immediately adjacent as aforesaid.
Claim 3
Dependent Claim
25 words
The device of claim 1 wherein said semiconductor material body is of doped silicon and said polycrystalline semiconductor material layer is also of doped silicon.
Claim 4
Dependent Claim
181 words
The device of claim 1 wherein there is contained a first field-effect device, said first-effect device comprising: said semiconductor material body being of a first conductivity type, in at least a first portion thereof serving as a first substrate therein, except in selected regions of said first substrate, with said first body portion intersecting said major surface in a first major surface portion, said first body portion having a first dopant distribution therein leading to said first conductivity type; a first field-effect device channel region located at least in part in said first substrate; a pair of first field-effect device terminating regions each being of a second conductivity type and each being located in one of said selected regions intersecting said first major surface portion such that they are separated by said first field-effect device channel region, there being a pn junction separating each member of said first field-effect device terminating region pair from remaining portions of said first substrate, said first field-effect device terminating region pair having a second dopant distributed in each member leading to said second conductivity type;
Claim 5
Dependent Claim
95 words
a first field-effect device control gate region separated from said first major surface portion by a second insulating material layer of a first thickness and located across said first insulating layer from said first field-effect device channel region; a first field-effect device shield region separated from said first major surface by a third insulating material layer of a second thickness and located across said second insulating layer from substantially all of at least one of said terminating region member pn junctions where this said terminating region member pn junction intersects said first major surface portion.
Claim 6
Dependent Claim
95 words
a first field-effect device control gate region separated from said first major surface portion by a second insulating material layer of a first thickness and located across said first insulating layer from said first field-effect device channel region; a first field-effect device shield region separated from said first major surface by a third insulating material layer of a second thickness and located across said second insulating layer from substantially all of at least one of said terminating region member pn junctions where this said terminating region member pn junction intersects said first major surface portion.
Claim 7
Dependent Claim
14 words
The device of claim 2 wherein said insulating means comprises an oxide of silicon.
Claim 8
Dependent Claim
14 words
The device of claim 2 wherein said insulating means comprises a nitride of silicon.
Claim 9
Dependent Claim
38 words
The device of claim 3 wherein a selected one of said end members from one of said first and second pluralities of polycrystalline semiconductor material layer regions is electrically connected to said first field-effect device control gate region.
Claim 10
Dependent Claim
34 words
The device of claim 3 wherein a selected one of said end members from one of said first and second pluralities of polycrystalline semiconductor material layer regions is electrically connected to said first substrate.
Claim 11
Dependent Claim
38 words
The device of claim 6 wherein said selected end member and said first field-effect device control gate region are together joined to form a single connected structure with at least one common material used throughout said joined structure.
Claim 12
Dependent Claim
37 words
The device of claim 6 wherein said selected end member and said first field-effect device shield region are together joined to form a single connected structure with at least one common material used throughout said joined structure.
Claim 13
Dependent Claim
44 words
The device of claim 6 wherein said selected end member, said first field-effect device control gate region, and said first field-effect device shield region are together joined to form a single connected structure with at least one common material used throughout said joined structure.
Claim 14
Dependent Claim
36 words
The device of claim 7 wherein that remaining one of said end members from said first and second pluralities of polycrystalline semiconductor material layer regions is electrically connected to said first field-effect device control gate region.
Claim 15
Dependent Claim
25 words
The device of claim 8 wherein said first insulating material layer joins with said second and third insulating material layers in at least some locations.
Claim 16
Dependent Claim
25 words
The device of claim 9 wherein said first insulating material layer joins with said second and third insulating material layers in at least some locations.
Claim 17
Dependent Claim
25 words
The device of claim 10 wherein said first insulating material layer joins with said second and third insulating material layers in at least some locations.
References Cited (Backward Citations)
US3617825A
Cited
US3725751A
Cited
US3653971A
Cited
US3936319A
Cited
US4025943A
Cited
US4051374A
Cited
US4081820A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-12-02 | 1984-06-02 | 1984-12-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-12-02 | 1988-06-02 | 1988-12-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-12-02 | 1992-06-02 | 1992-12-02 | $7700.00 | Window Closed / Lapsed |