Patent US4223327A successfully refreshed from Google Patents.
US4223327A
Expired / Lapsed
US
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Nickel-palladium Schottky junction in a cavity
Assignee: Mitsubishi Electric Corp
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Filing: 1978-05-24
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Granted: 1980-09-16
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Expires: 1998-05-24
Abstract
Abstract A Schottky barrier semiconductor device comprising a semiconductor substrate having a hole in part of one of its main surfaces, a surface protecting film formed on the main surface and having a flange-like part extending over the edge of the hole, and a barrier metal formed on the entire wall of the hole including areas underneath the flange-like portion. The barrier metal film thus formed prevents concentration of an electric field at the edge of the interface between the barrier metal and the semiconductor substrate, thereby improving the reverse breakdown characteristics.
Inventors
- 👤 Aiichiro Nara
- 👤 Hisao Kondo
- 👤 Takeji Fujiwara
- 👤 Hideaki Ikegawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:15
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/46; H10P14/47; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6738; H10D30/674; H10D30/675; H10D62/00; H10D62/80; H10D62/85; H10D64/00; H10D64/20; H10D64/23; H10D64/60; H10D64/64; Y; Y10; Y10S; Y10S148/00; Y10S148/139
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
79 words
A Schottky barrier semiconductor device comprising: a semiconductor substrate having a hollow in part of one of its main surfaces; a surface protecting film formed on said main surface and having a flange-like portion extended over the peripheral edge of said hollow; and a Schottky barrier forming metal bonded to the entire wall of said hollow without filling said hollow, wherein said barrier metal is formed of an alloy of nickel-palladium to a thickness of 500 to 5000 A.
Claim 2
Dependent Claim
79 words
A Schottky barrier semiconductor device comprising: a semiconductor substrate having a hollow in part of one of its main surfaces; a surface protecting film formed on said main surface and having a flange-like portion extended over the peripheral edge of said hollow; and a Schottky barrier forming metal bonded to the entire wall of said hollow without filling said hollow, wherein said barrier metal is formed of an alloy of nickel-palladium to a thickness of 500 to 5000 A.
Claim 3
Dependent Claim
17 words
The Schottky barrier semiconductor device according to claim 1 wherein the wall of said hollow is curved.
Claim 4
Dependent Claim
16 words
The Schottky barrier semiconductor device according to claim 1 wherein said hollow is formed by etching.
Claim 5
Dependent Claim
22 words
The Schottky barrier semiconductor device according to claim 1 wherein said hollow is formed to a depth of 1 to 10 μm.
Claim 6
Dependent Claim
18 words
The Schottky barrier semiconductor device according to claim 1 wherein said barrier metal is formed by electroplating techniques.
Claim 7
Dependent Claim
95 words
A Schottky barrier semiconductor device comprising: a semiconductor substrate having a hollow in part of one of its main surfaces; a surface protecting film formed on said main surface and having a flange-like portion extended over the peripheral edge of said hollow; a first barrier metal formed of an alloy of nickel-palladium in part of said hollow excepting the side wall; and a second barrier metal formed on the side wall of said hollow and on the first barrier metal, wherein said second barrier metal is formed to a thickness of 500 to 5000 A.
Claim 8
Dependent Claim
95 words
A Schottky barrier semiconductor device comprising: a semiconductor substrate having a hollow in part of one of its main surfaces; a surface protecting film formed on said main surface and having a flange-like portion extended over the peripheral edge of said hollow; a first barrier metal formed of an alloy of nickel-palladium in part of said hollow excepting the side wall; and a second barrier metal formed on the side wall of said hollow and on the first barrier metal, wherein said second barrier metal is formed to a thickness of 500 to 5000 A.
Claim 9
Dependent Claim
26 words
The Schottky barrier semiconductor device according to claim 6 wherein said first barrier metal is of material selected from nickel, molybdenum, platinum, tantalum, titanium and tungsten.
Claim 10
Dependent Claim
19 words
The Schottky barrier semiconductor device according to claim 6 wherein said second barrier metal is formed by electroplating technique.
References Cited (Backward Citations)
US3349297A
Cited
US3636417A
Cited
US3746950A
Cited
US3777228A
Cited
US3764865A
Cited
CA903928A
Cited
US3999281A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-09-16 | 1984-03-17 | 1984-09-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-09-16 | 1988-03-17 | 1988-09-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-09-16 | 1992-03-17 | 1992-09-16 | $7700.00 | Window Closed / Lapsed |