US3777228A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Schottky junction in a cavity
Assignee: US Philips Corp
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Filing: 1969-11-14
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Granted: 1973-12-04
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Expires: 1989-11-14
Abstract
Abstract The invention relates to a method of manufacturing a semiconductor device having a schottky junction, for example, a schottky diode, in which a masking layer which is provided with a window is provided on a semiconductor body and at the area of the window a cavity extending to below the masking layer is provided in but not through said semiconductor body, the schottky electrode layer which extends to below the masking layer but not up to the masking layer being provided in said cavity by vapourdeposition or sputtering. The invention also relates to a semiconductor device manufactured by said method. A pressure contact is preferably provided on the schottky electrode layer.
Inventors
- 👤 Steenbergen T Van
- 👤 Waal J De
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:24
CPC Classifications
H; H10; H10W; H10W72/00; H10D; H10D99/00; H10P; H10P95/00
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
131 words
A semiconductor device having a schottky junction comprising a semiconductor body of one conductivity type having a region which has a cavity which extends from within said region to the surface of said region, a masking layer on said surface provided with a window at said cavity, said cavity extending laterally to below said masking layer whereby the edge of said masking layer overhangs said cavity, a schottky electrode layer having a thickness smaller than the depth of said cavity and located entirely in said cavity on said region and extending below said masking layer but not up to said masking layer and means for making electrical contact with said schottky electrode layer comprising an electrical conducting member extending into said cavity and forming a contact to said schottky electrode layer.
Claim 2
Dependent Claim
131 words
A semiconductor device having a schottky junction comprising a semiconductor body of one conductivity type having a region which has a cavity which extends from within said region to the surface of said region, a masking layer on said surface provided with a window at said cavity, said cavity extending laterally to below said masking layer whereby the edge of said masking layer overhangs said cavity, a schottky electrode layer having a thickness smaller than the depth of said cavity and located entirely in said cavity on said region and extending below said masking layer but not up to said masking layer and means for making electrical contact with said schottky electrode layer comprising an electrical conducting member extending into said cavity and forming a contact to said schottky electrode layer.
Claim 3
Dependent Claim
30 words
A semiconductor device as claimed in claim 1, wherein a conductive layer which is insulated from the schottky electrode layer by the masking layer is provided on the masking layer.
Claim 4
Dependent Claim
32 words
A semiconductor device as claimed in claim 1, wherein the depth of the cavity exceeds 1 Mu m and the thickness of the schottky electrode layer is smaller than 1 Mu m.
Claim 5
Dependent Claim
32 words
A semiconductor device as claimed in claim 1, wherein said region is an epitaxial semiconductor layer of said conductivity type having a higher resistivity than the adjoining part of said semiconductor body.
References Cited (Backward Citations)
US3443041A
Cited
US3514346A
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US3322581A
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US3500144A
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US3585469A
Cited
US3564309A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-12-03 | 1977-06-04 | 1977-12-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-12-03 | 1981-06-04 | 1981-12-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-12-03 | 1985-06-04 | 1985-12-04 | $7700.00 | Window Closed / Lapsed |