US3585469A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Schottky barrier semiconductor device
Assignee: Telefunken Electronic GmbH
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Filing: 1968-06-20
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Granted: 1971-06-15
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Expires: 1988-06-20
Abstract
Abstract A schottky-barrier diode and a method of making the same. The diode has a surface-type metal contact arranged on a semiconductor body forming a rectifying metal-semiconductor junction. The outer edge of the contact terminates abruptly and the rim portion of the contact tapers toward the outer edge.
Inventors
- 👤 Hans Jager
- 👤 Wolodimir Kosak
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 21:33
CPC Classifications
H; H10; H10P; H10P95/00; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/66; H10P14/662; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10W; H10W20/00; H10W20/40
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
60 words
The improvement defined in claim 2, further comprising a masking layer of insulating material arranged on the surface of said semiconductor body on the side of said body which is contacted by said metal contact, said masking layer covering the portion of said surface not covered by said metal contact and extending over said rim portion of said metal contact.
Claim 2
Dependent Claim
60 words
The improvement defined in claim 2 wherein said masking layer comprises two insulating layers arranged one on the other and made of different materials, the material forming the first insulating layer arranged in direct contact with said surface being more readily dissolvable in an etching solution than the material forming the second insulating layer arranged on said first insulating layer.
Claim 3
Dependent Claim
48 words
The improvement defined in claim 3 wherein said semiconductor body is made of silicon, said first insulating layer is made of silicon dioxide and said second insulating layer is made of silicon oxide, and wherein said second insulating layer extends over said rim portion of said metal contact.
Claim 4
Dependent Claim
40 words
The improvement defined in claim 4 wherein said first insulating layer has a thickness in the range of 0.1 to 0.5 Mu m. and said second insulating layer has a thickness in the range of 0.3 to 1 Mu m.
Claim 5
Dependent Claim
32 words
The improvement defined in claim 1 wherein said semiconductor body is n-conductive and said metal contact is made of a material selected from the group consisting of gold, silver, platinum and palladium.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-06-14 | 1974-12-14 | 1975-06-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-06-14 | 1978-12-14 | 1979-06-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-06-14 | 1982-12-14 | 1983-06-15 | $7700.00 | Window Closed / Lapsed |