US3764865A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor devices having closely spaced contacts
Assignee: RCA Corp
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Filing: 1970-03-17
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Granted: 1973-10-09
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Expires: 1990-03-17
Abstract
Abstract A semiconductor device having at least two contacts on a body of semiconductor material. One of the contacts is in a plane spaced from the plane of the other contacts and the edges of the one contact are in substantial alignment with the adjacent edges of the other contacts. The material under either the edges of the one contact or the adjacent edges of the other contacts is removed so that such edges project in cantilever fashion beyond the material under the respective contact.
Inventors
- 👤 L Napoli
- 👤 W Reichert
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 16:28
CPC Classifications
H; H10; H10D; H10D99/00; H10D64/00; H10D64/20; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/139; Y10S148/143; Y10S438/00; Y10S438/942; Y10S438/944
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
99 words
A semiconductor device comprising: a. a body including semiconductor material having a pair of spaced co-planar surfaces and a third surface between but transversely spaced from said pair of surfaces, b. a separate metal film contact on each of said surfaces, c. the edges of the contact on the third surface being in substantial alignment with the adjacent edges of the contacts on said pair of surfaces along a plane transverse to said surfaces, and d. each contact on an uppermost of said surfaces extending in cantilever fashion beyond the edge of the surfaces on which it is disposed.
Claim 2
Dependent Claim
99 words
A semiconductor device comprising: a. a body including semiconductor material having a pair of spaced co-planar surfaces and a third surface between but transversely spaced from said pair of surfaces, b. a separate metal film contact on each of said surfaces, c. the edges of the contact on the third surface being in substantial alignment with the adjacent edges of the contacts on said pair of surfaces along a plane transverse to said surfaces, and d. each contact on an uppermost of said surfaces extending in cantilever fashion beyond the edge of the surfaces on which it is disposed.
Claim 3
Dependent Claim
21 words
A semiconductor device in accordance with claim 1 in which the pair of co-planar surfaces are surfaces of the semiconductor material.
Claim 4
Dependent Claim
58 words
A semiconductor device in accordance with claim 2 in which the third surface is the bottom of a recess in the semiconductor material between the pair of co-planar surfaces, the contacts on the pair of surfaces each have an edge which projects beyond a separate side wall of the recess so as to be cantilevered over the recess.
Claim 5
Dependent Claim
28 words
A semiconductor device in accordance with claim 3 in which the recess is of a depth slightly greater than the thickness of the contact on the third surface.
Claim 6
Dependent Claim
41 words
A semiconductor device iN accordance with claim 3 in which the contacts on the pair of surfaces are in ohmic contact with the semiconductor body and the contact on the third surface forms a surface barrier junction with the semiconductor body.
Claim 7
Dependent Claim
66 words
A semiconductor device in accordance with claim 2, in which the third surface is the surface of a layer of an electrical insulating material on the semiconductor material between the pair of surfaces, the contact on the surface is on the insulating layer and the side edges of the contact on the third surface project beyond the side edges of the surface of the insulating layer.
Claim 8
Dependent Claim
65 words
A semiconductor device in accordance with claim 6 including a second layer of an electrical insulating material between the said first insulating layer and the contact on the third surface, the side edges of said second insulating layer project beyond the side edges of the surface of said first insulating layer and the contact on the second insulating layer extends over the full width thereof.
Claim 9
Dependent Claim
34 words
A semiconductor device in accordance with claim 7 in which the second insulating layer is of a material which will not be attacked by an etchant for the material of the first insulating layer.
Claim 10
Dependent Claim
31 words
A semiconductor device in accordance with claim 7 including spaced regions of low resistivity in the body at said pair of surfaces and under the contacts on the pair of surfaces.
References Cited (Backward Citations)
US3333168A
Cited
US3564309A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-10-08 | 1977-04-09 | 1977-10-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-10-08 | 1981-04-09 | 1981-10-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-10-08 | 1985-04-09 | 1985-10-09 | $7700.00 | Window Closed / Lapsed |