Method for constructing multispectral infrared detectors

Claim 1

A method for constructing multispectral infrared detectors by forming three photovoltaic HgCdTe elements by the mercury ion grafting technique and superimposing said photovoltaic elements to form a sandwich, and comprising the following succession of operations: (a) preparing, for each of said photovoltaic elements, a slice of HgCdTe having a composition depending on the necessary cut-off wavelength, and a thickness such that it is mechanically self-supporting after operation (c) (e.g. 300-400μ); (b) polishing both faces of each slice with a diamond paste of progressively decreasing grain size; (c) chemically attacking the polished slices with bromine (20%)-methanol for five minutes in order to eliminate mechanical damage; (d) heating each slice in the presence of mercury at controlled pressure inside a previously evacuated test tube to define the type of conductivity and the most suitable concentration of the carriers, said heating being carried out in a furnace with a temperature profile such as to enable the slice to be mantained at 400° C. and the mercury at 280° C. for more than ten hours; (e) constructing the earth contact by catalytic deposition of gold on one face of each slice in accordance with a geometrical arrangement in the form of a circular ring, by using low temperature photolithographic techniques (less than 40° C.); (f) cementing the individual slices on to respective supports by means of an electrically conducting paste; (g) depositing a layer of photoresistive material on the entire free face of each slice; (h) masking said photoresistive layer with the exception of a small exposure region, the dimensions of which vary according to the application scheduled for the detector, and in particular according to the aperture of the inlet optical system of the instrument for which the detector is intended; (i) eliminating the photoresistive layer in the exposure and development region without exceeding 40° C. during the various stages; (j) subjecting each slice to grafting under the following conditions: Hg + ions; E=30 Kev; dose 10 12 ions/cm 2 ; (k) depositing the upper contact on to each slice by evaporation of indium through a metal mask; (l) depositing on to said upper contact and on to the grafted region of each slice, an antireflecting layer of ZnS having a thickness compatible with the cut-off wavelengths of the individual photovoltaic elements, and leaving only a region of said upper contact uncovered; (m) assembling the individual elements constructed in this manner in overlying disposition, making the electrical connection between the upper contact of each photovoltaic element and a respective output terminal of the detector by means of a gold wire welded with electrically conducting paste.

Claim 2

A method for constructing multispectral infrared detectors by forming three photovoltaic HgCdTe elements by the mercury ion grafting technique and superimposing said photovoltaic elements to form a sandwich, and comprising the following succession of operations: (a) preparing, for each of said photovoltaic elements, a slice of HgCdTe having a composition depending on the necessary cut-off wavelength, and a thickness such that it is mechanically self-supporting after operation (c) (e.g. 300-400μ); (b) polishing both faces of each slice with a diamond paste of progressively decreasing grain size; (c) chemically attacking the polished slices with bromine (20%)-methanol for five minutes in order to eliminate mechanical damage; (d) heating each slice in the presence of mercury at controlled pressure inside a previously evacuated test tube to define the type of conductivity and the most suitable concentration of the carriers, said heating being carried out in a furnace with a temperature profile such as to enable the slice to be mantained at 400° C. and the mercury at 280° C. for more than ten hours; (e) constructing the earth contact by catalytic deposition of gold on one face of each slice in accordance with a geometrical arrangement in the form of a circular ring, by using low temperature photolithographic techniques (less than 40° C.); (f) cementing the individual slices on to respective supports by means of an electrically conducting paste; (g) depositing a layer of photoresistive material on the entire free face of each slice; (h) masking said photoresistive layer with the exception of a small exposure region, the dimensions of which vary according to the application scheduled for the detector, and in particular according to the aperture of the inlet optical system of the instrument for which the detector is intended; (i) eliminating the photoresistive layer in the exposure and development region without exceeding 40° C. during the various stages; (j) subjecting each slice to grafting under the following conditions: Hg + ions; E=30 Kev; dose 10 12 ions/cm 2 ; (k) depositing the upper contact on to each slice by evaporation of indium through a metal mask; (l) depositing on to said upper contact and on to the grafted region of each slice, an antireflecting layer of ZnS having a thickness compatible with the cut-off wavelengths of the individual photovoltaic elements, and leaving only a region of said upper contact uncovered; (m) assembling the individual elements constructed in this manner in overlying disposition, making the electrical connection between the upper contact of each photovoltaic element and a respective output terminal of the detector by means of a gold wire welded with electrically conducting paste.