Method for manufacturing a heterojunction semiconductor device by disappearing intermediate layer

Claim 1

A method for manufacturing semiconductor device, comprising the steps of: forming a thin film layer on at least a portion of the principal surface of a substrate, said thin film layer having a thickness ranging between 100 and 500 A; and growing a semiconductor layer on the portion of said substrate previously covered by said thin film layer permitting said thin film layer to disappear thereby forming a two layer heterojunction between said substrate and said semiconductor layer; said semiconductor layer being formed from a compound semiconductor; said thin film layer comprising at least one element, said element being selected from the group consisting of elements of the same group of the periodic table as the higher numbered group element of said compound semiconductor, and any additional element present in said thin film layer being selected from the group consisting of elements of the groups of the periodic table other than the group of the lower numbered group element of said compound semiconductor.

Claim 2

A method for manufacturing semiconductor device, comprising the steps of: forming a thin film layer on at least a portion of the principal surface of a substrate, said thin film layer having a thickness ranging between 100 and 500 A; and growing a semiconductor layer on the portion of said substrate previously covered by said thin film layer permitting said thin film layer to disappear thereby forming a two layer heterojunction between said substrate and said semiconductor layer; said semiconductor layer being formed from a compound semiconductor; said thin film layer comprising at least one element, said element being selected from the group consisting of elements of the same group of the periodic table as the higher numbered group element of said compound semiconductor, and any additional element present in said thin film layer being selected from the group consisting of elements of the groups of the periodic table other than the group of the lower numbered group element of said compound semiconductor.

Claim 4

A method for manufacturing a semiconductor device comprising the steps of: evaporating phosphorus on at least a portion of the surface of a single-crystal silicon substrate to form a thin phosphorus layer; and growing a gallium phosphide layer on the portion of said silicon substrate previously covered by said thin phosphorus layer permitting said thin phosphorus layer to disappear thereby forming a two layer heterojunction between said silicon substrate and said gallium phosphide layer.

Claim 5

A method for manufacturing a semiconductor device comprising the steps of: evaporating phosphorus on at least a portion of the surface of a single-crystal silicon substrate to form a thin phosphorus layer; and growing a gallium phosphide layer on the portion of said silicon substrate previously covered by said thin phosphorus layer permitting said thin phosphorus layer to disappear thereby forming a two layer heterojunction between said silicon substrate and said gallium phosphide layer.