US4211587A
Expired / Lapsed
US
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Process for producing a metal to compound semiconductor contact having a potential barrier of predetermined height
Assignee: Thales SA
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Filing: 1978-12-29
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Granted: 1980-07-08
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Expires: 1998-12-29
Abstract
Abstract A process for producing a "metal to compound semiconductor" contact having a potential barrier of predetermined height. By this is meant a Schottky contact or an ohmic contact. The process comprises, before deposition of the metal, perfectly cleaning the semiconductor so as to remove in particular oxygen, then depositing sulphur or selenium on its surface by the action of hydrogen sulphide or hydrogen selenide, and, after deposition of the metal, effecting a heat treatment of the contact. In this way, an ohmic contact is obtained. The Schottky contact is obtained by the action of hydrogen sulphide or hydrogen selenide and then pure oxygen at very low pressure.
Inventors
- 👤 Jean Massies
- 👤 Tronc L. Nuyen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 16:16
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/16; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; H10D64/012; H10D64/0124; H10P32/12; H10P32/17; H10P32/174; Y; Y10; Y10S; Y10S148/00; Y10S148/14; Y10S438/00; Y10S438/906; Y10S438/909
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
61 words
A process for producing a "metal to compound semiconductor" contact including the deposition of a metal on the surface of a n-type semiconductor material, comprising a first preliminary step wherein oxygen is entirely removed from the surface of the semiconductor material and a second preliminary step wherein the semiconductor material is treated in an aqueous solution of hydrogen sulphide or selenide.
Claim 2
Dependent Claim
61 words
A process for producing a "metal to compound semiconductor" contact including the deposition of a metal on the surface of a n-type semiconductor material, comprising a first preliminary step wherein oxygen is entirely removed from the surface of the semiconductor material and a second preliminary step wherein the semiconductor material is treated in an aqueous solution of hydrogen sulphide or selenide.
Claim 3
Dependent Claim
77 words
A process for producing a metal to compound semiconductor contact including the deposition of a metal on the surface of a n-type semiconductor material, comprising a first preliminary step wherein oxygen is entirely removed from the surface of the semiconductor material, a second preliminary step wherein the semiconductor material is treated in an aqueous solution of hydrogen sulphide or selenide, and a third preliminary step wherein the semiconductor material is treated in an aqueous solution of oxygen.
Claim 4
Dependent Claim
77 words
A process for producing a metal to compound semiconductor contact including the deposition of a metal on the surface of a n-type semiconductor material, comprising a first preliminary step wherein oxygen is entirely removed from the surface of the semiconductor material, a second preliminary step wherein the semiconductor material is treated in an aqueous solution of hydrogen sulphide or selenide, and a third preliminary step wherein the semiconductor material is treated in an aqueous solution of oxygen.
Claim 5
Dependent Claim
80 words
A process for producing a "metal to compound semiconductor" contact, comprising the following steps: (a) operating in a vacuum chamber, cleaning by ionic means the surface of a compound semiconductor specimen to remove the impurities including oxygen traces; (b) creating ultra-vacuum conditions in said chamber, then introducing a hydrogen sulphide or hydrogen selenide in gaseous phase until the pressure rises to about 10 -6 Torr; (c) depositing a metal layer by a conventional method; (d) heat treating said semiconductor specimen.
Claim 6
Dependent Claim
80 words
A process for producing a "metal to compound semiconductor" contact, comprising the following steps: (a) operating in a vacuum chamber, cleaning by ionic means the surface of a compound semiconductor specimen to remove the impurities including oxygen traces; (b) creating ultra-vacuum conditions in said chamber, then introducing a hydrogen sulphide or hydrogen selenide in gaseous phase until the pressure rises to about 10 -6 Torr; (c) depositing a metal layer by a conventional method; (d) heat treating said semiconductor specimen.
Claim 7
Dependent Claim
33 words
A process as claimed in claim 3, wherein at step (a) the cleaning is carried out using ions of argon of 500 eV with a density of 4/μA/cm 2 for about ten minutes.
Claim 8
Dependent Claim
38 words
A process as claimed in claim 3, wherein the metal deposited at step (c) is gold and the heat treatment at step (d) is carried out at a temperature from 300° C. to 350° C. for ten minutes.
Claim 9
Dependent Claim
134 words
A process for producing a Schottky contact on a compound semiconductor specimen, comprising the following steps: (a) operating in a vacuum chamber, cleaning the surface of said specimen to remove the impurities including oxygen traces; (b) creating ultra-vacuum conditions in said chamber, then introducing hydrogen sulphide or selenide in gaseous phase until the pressure rises to about 10 -6 Torr; (c) after a space of time Δt 1 , pumping the gaseous phase so as to restore the ultra-vacuum conditions, then introducing pure oxygen until the pressure rises to about 10 -6 Torr and maintaining this gas in contact with the specimen for a time Δt 2 , then pumping the gas to restore the ultra-vacuum conditions; (d) depositing a metal layer onto the specimen by a conventional method; (e) heat treating the specimen.
Claim 10
Dependent Claim
134 words
A process for producing a Schottky contact on a compound semiconductor specimen, comprising the following steps: (a) operating in a vacuum chamber, cleaning the surface of said specimen to remove the impurities including oxygen traces; (b) creating ultra-vacuum conditions in said chamber, then introducing hydrogen sulphide or selenide in gaseous phase until the pressure rises to about 10 -6 Torr; (c) after a space of time Δt 1 , pumping the gaseous phase so as to restore the ultra-vacuum conditions, then introducing pure oxygen until the pressure rises to about 10 -6 Torr and maintaining this gas in contact with the specimen for a time Δt 2 , then pumping the gas to restore the ultra-vacuum conditions; (d) depositing a metal layer onto the specimen by a conventional method; (e) heat treating the specimen.
Claim 11
Dependent Claim
20 words
A process as claimed in claim 6, wherein at step (a) the cleaning is carried out using ions of argon.
Claim 12
Dependent Claim
39 words
A process as claimed in claim 6, wherein the metal deposited at step (c) is gold and the heat treatment at step (d) is carried out at a temperature of from 300° C. to 350° C. for ten minutes.
Claim 13
Dependent Claim
65 words
A process as claimed in claims 1, 2, 3 or 6, wherein the metal deposited is gold, silver, aluminium, indium, or alloys thereof, the semiconductor material being one of the following chemical compounds: GaAs, GaP, GaSb InAs, InP, InSb GaAs x P 1-x , Ga x In 1-x As, Ga x Al 1-x As Ga x In 1-x As y P y for 0≦x≦1 0≦y≦1.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-07-08 | 1984-01-07 | 1984-07-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-07-08 | 1988-01-07 | 1988-07-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-07-08 | 1992-01-07 | 1992-07-08 | $7700.00 | Window Closed / Lapsed |