Photoresist stripper with dodecylsulfonic acid and chlorinated solvents

Claim 2

A low cost and readily disposable liquid composition for removing an organic solvent strippable polymer and/or colloid photoresist mask from a face on a silicon wafer substantially at room temperature and pressure, said composition including, by volume, about 15-50% dodecylsulfonic acid, and about 25-42% of each of tetrachloroethylene and ortho-dichlorobenzene in generally equal stripper proportions.

Claim 3

A stripper for removing an organic solvent strippable polymer and/or colloid photoresist mask from a semiconductor device surface, said stripper consisting essentially of, by volume, about 50-85% tetrachloroethylene and ortho-dichlorobenzene in generally equal amounts, up to 3% formic acid, and the remainder substantially dodecylsulfonic acid.

Claim 4

A stripper for removing an organic solvent strippable polymer and/or colloid photoresist mask from a semiconductor device surface, said stripper consisting essentially of, by volume, about 50-85% tetrachloroethylene and ortho-dichlorobenzene in generally equal amounts, up to 3% formic acid, and the remainder substantially dodecylsulfonic acid.

Claim 5

A low cost, phenol-less stripper for a hardened, organic solvent strippable polymer and/or colloid photoresist on a silicon wafer surface, said stripper consisting essentially of, by volume, at least about 30% dodecylsulfonic acid, up to 3% formic acid, about 25-35% tetrachloroethylene, and about 25-35% ortho-dichlorobenzene, wherein the stripper percentage of tetrachloroethylene and of ortho-dichlorobenzene are less than about 10 stripper percentage points apart.

Claim 6

A low cost, phenol-less stripper for a hardened, organic solvent strippable polymer and/or colloid photoresist on a silicon wafer surface, said stripper consisting essentially of, by volume, at least about 30% dodecylsulfonic acid, up to 3% formic acid, about 25-35% tetrachloroethylene, and about 25-35% ortho-dichlorobenzene, wherein the stripper percentage of tetrachloroethylene and of ortho-dichlorobenzene are less than about 10 stripper percentage points apart.

Claim 7

A low cost, phenol-less stripper for a hardened, organic solvent strippable polymer and/or colloid photoresist material on a silicon wafer face having no unprotected aluminum layer thereon, said stripper consisting essentially of, by volume, about 50-84% tetrachloroethylene and ortho-dichlorobenzene in generally equal amounts, about 1-3% formic acid, and at least 15% dodecylsulfonic acid.

Claim 8

A low cost, phenol-less stripper for a hardened, organic solvent strippable polymer and/or colloid photoresist material on a silicon wafer face having no unprotected aluminum layer thereon, said stripper consisting essentially of, by volume, about 50-84% tetrachloroethylene and ortho-dichlorobenzene in generally equal amounts, about 1-3% formic acid, and at least 15% dodecylsulfonic acid.

Claim 9

A low cost and readily disposable liquid composition suitable for removing a hardened, organic solvent strippable polymer and/or colloid photoresist material from a face on a silicon wafer substantially at room temperature and pressure, which wafer face has an exposed aluminum layer thereon, said composition consisting of about 30-35%, by volume, of each of dodecylsulfonic acid, tetrachloroethylene, and ortho-dichlorobenzene, with the latter two being present in substantially equal volumes.

Claim 10

A low cost and readily disposable liquid composition suitable for removing a hardened, organic solvent strippable polymer and/or colloid photoresist material from a face on a silicon wafer substantially at room temperature and pressure, which wafer face has an exposed aluminum layer thereon, said composition consisting of about 30-35%, by volume, of each of dodecylsulfonic acid, tetrachloroethylene, and ortho-dichlorobenzene, with the latter two being present in substantially equal volumes.