Patent US4180422A successfully refreshed from Google Patents.
US4180422A
Expired / Lapsed
US
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Method of making semiconductor diodes
Assignee: Raytheon Co
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Filing: 1973-12-06
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Granted: 1979-12-25
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Expires: 1993-12-06
Abstract
Abstract A method of making a number of semiconductor diodes on a single wafer without breakage during handling and processing, comprising the steps of forming a plurality of mesas on one surface of an intrinsic substrate, diffusing a selected first conductivity-type region into each mesa, coating the front surface of the substrate and mesas with oxide, chemically milling recesses into the opposite side of the substrate in alignment with the mesas to a predetermined depth where the mesas are each supported by a thin annular area of substrate material permitting transfer of the device into an epitaxial reactor, gas etching the recesses to a depth beyond the oxide interface to physically separate the mesas from the substrate material, growing a thin epitaxial layer of opposite conductivity type over the back surface of the device, applying ohmic contacts to the device, and separating the individual mesas.
Inventors
- 👤 Warren C. Rosvold
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:44
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/01; H10D62/00; H10D62/10; H10D62/117; H10D8/021; H10D8/024; H10D8/50; H10P; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P50/644; Y; Y10; Y10S; Y10S438/00; Y10S438/978
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
74 words
The method of forming a semiconductor structure comprising the steps of: (a) etching into a surface of a layer of silicon material, such surface lying in a <100> crystallographic plane of such material, to form walls in such material with sides parallel to a <111> crystallographic plane of such material; (b) forming a layer of insulating material over the walls; and, (c) forming a layer of conductive material over the layer of insulating material.
Claim 2
Independent Claim
74 words
The method of forming a semiconductor structure comprising the steps of: (a) etching into a surface of a layer of silicon material, such surface lying in a <100> crystallographic plane of such material, to form walls in such material with sides parallel to a <111> crystallographic plane of such material; (b) forming a layer of insulating material over the walls; and, (c) forming a layer of conductive material over the layer of insulating material.
Claim 3
Dependent Claim
44 words
The method recited in claim 1 including the step of forming a semiconductor body having the layer of silicon material and a second layer of silicon material having a different conductivity type from the conductivity type of the first mentioned layer of silicon material.
Claim 4
Dependent Claim
42 words
The method recited in claim 1 including the step of forming first and second semiconductor layers on opposite surfaces of the silicon layer, such second semiconductor layer being formed with a surface parallel to a <111> crystallographic plane of the silicon layer.
Claim 5
Dependent Claim
16 words
The method recited in claim 3 wherein the second semiconductor layer is formed by epitaxial growth.
Claim 6
Dependent Claim
19 words
The method recited in claim 4 wherein the first semiconductor layer is formed by diffusion into the silicon layer.
Claim 7
Independent Claim
90 words
The method of forming a semiconductor device comprising the steps of: (a) etching into a surface of a layer of silicon material, such surface lying in a <100> crystallographic plane of such material, to form walls in such material with sides parallel to a <111 22 crystallographic plane of such material, such walls being formed about at least a portion of the periphery of the device; (b) forming a layer of insulating material over the walls; and (c) forming a layer of conductive material over the layer of insulating material.
Claim 8
Independent Claim
90 words
The method of forming a semiconductor device comprising the steps of: (a) etching into a surface of a layer of silicon material, such surface lying in a <100> crystallographic plane of such material, to form walls in such material with sides parallel to a <111 22 crystallographic plane of such material, such walls being formed about at least a portion of the periphery of the device; (b) forming a layer of insulating material over the walls; and (c) forming a layer of conductive material over the layer of insulating material.
Claim 9
Independent Claim
86 words
The method of forming a semiconductor structure comprising the steps of: (a) etching into a surface of a layer of semiconductor material, such surface lying in a <100> crystallographic plane of such material, to form walls in such material having sides parallel to a <111 > crystallographic plane of such material; and (b) forming a conductive layer having a first portion lying in the <100> crystallographic plane of the semiconductor material and having a second portion lying in the <111> crystallographic plane of the semiconductor material.
Claim 10
Independent Claim
86 words
The method of forming a semiconductor structure comprising the steps of: (a) etching into a surface of a layer of semiconductor material, such surface lying in a <100> crystallographic plane of such material, to form walls in such material having sides parallel to a <111 > crystallographic plane of such material; and (b) forming a conductive layer having a first portion lying in the <100> crystallographic plane of the semiconductor material and having a second portion lying in the <111> crystallographic plane of the semiconductor material.
Claim 11
Independent Claim
102 words
The method of forming a semiconductor structure comprising the steps of: (a) etching into a surface of a layer of semiconductor material, such surface lying in a <100> crystallographic plane of such material, to form walls in such material with sides parallel to planes disposed at acute angles in the order of 30 degrees with respect to an axis perpendicular to the surface of the material; (b) forming a conductive layer having a first portion lying in the <100> crystallographic plane of the material and having a second portion lying in a plane parallel to the plane of one of the sides.
Claim 12
Independent Claim
102 words
The method of forming a semiconductor structure comprising the steps of: (a) etching into a surface of a layer of semiconductor material, such surface lying in a <100> crystallographic plane of such material, to form walls in such material with sides parallel to planes disposed at acute angles in the order of 30 degrees with respect to an axis perpendicular to the surface of the material; (b) forming a conductive layer having a first portion lying in the <100> crystallographic plane of the material and having a second portion lying in a plane parallel to the plane of one of the sides.
Claim 13
Dependent Claim
23 words
The method recited in claim 8 including the step of forming a layer of insulating material over the sides of the semiconductor material.
Claim 14
Independent Claim
64 words
The method of forming a semiconductor device comprising the step of etching into a surface of a layer of semiconductor material, such surface lying in a <100> crystallographic plane of such material, to form walls in such material with sides parallel to a <111> crystallographic plane of such material, such walls being formed about at least a portion of the periphery of the device.
Claim 15
Independent Claim
64 words
The method of forming a semiconductor device comprising the step of etching into a surface of a layer of semiconductor material, such surface lying in a <100> crystallographic plane of such material, to form walls in such material with sides parallel to a <111> crystallographic plane of such material, such walls being formed about at least a portion of the periphery of the device.
Claim 16
Independent Claim
77 words
The method of forming a semiconductor device comprising the step of etching into a surface of a semiconductor material, such surface lying in a <100> crystallographic plane of such material to form walls in such material having sides parallel to planes disposed at angles in the order of 30 degrees with respect to an axis perpendicular to the surface of the material, such walls being formed about at least a portion of the periphery of the device.
Claim 17
Independent Claim
77 words
The method of forming a semiconductor device comprising the step of etching into a surface of a semiconductor material, such surface lying in a <100> crystallographic plane of such material to form walls in such material having sides parallel to planes disposed at angles in the order of 30 degrees with respect to an axis perpendicular to the surface of the material, such walls being formed about at least a portion of the periphery of the device.
Claim 18
Independent Claim
85 words
The method of forming a semiconductor device comprising the steps of: (a) etching into a surface of a layer of silicon material, such surface lying in a <100> crystallographic plane of such material, to form walls in such material having sides parallel to a <111> crystallographic plane of such material; and (b) forming a conductive layer having a first portion lying in the <100> crystallographic plane of the silicon material and having a second portion lying in the <111> crystallographic plane of the silicon material.
Claim 19
Independent Claim
85 words
The method of forming a semiconductor device comprising the steps of: (a) etching into a surface of a layer of silicon material, such surface lying in a <100> crystallographic plane of such material, to form walls in such material having sides parallel to a <111> crystallographic plane of such material; and (b) forming a conductive layer having a first portion lying in the <100> crystallographic plane of the silicon material and having a second portion lying in the <111> crystallographic plane of the silicon material.
Claim 20
Independent Claim
107 words
The method of forming a precisely chemically etched semiconductor structure comprising the steps of: (a) chemically etching into a surface of a layer of silicon material, such surface lying in a <100> crystallographic plane of such material, to form walls in such material with sides parallel to planes disposed at acute angles in the order of 30 degrees with respect to an axis perpendicular to the surface of the material; and (b) forming a conductive layer having a first portion lying in the <100> crystallographic plane of the material and having a second portion lying in a plane parallel to the plane of one of the sides.
Claim 21
Independent Claim
107 words
The method of forming a precisely chemically etched semiconductor structure comprising the steps of: (a) chemically etching into a surface of a layer of silicon material, such surface lying in a <100> crystallographic plane of such material, to form walls in such material with sides parallel to planes disposed at acute angles in the order of 30 degrees with respect to an axis perpendicular to the surface of the material; and (b) forming a conductive layer having a first portion lying in the <100> crystallographic plane of the material and having a second portion lying in a plane parallel to the plane of one of the sides.
Claim 22
Independent Claim
64 words
The method of forming a semiconductor device comprising the step of etching into a surface of a layer of silicon material, such surface lying in a <100> crystallographic plane of such material, to form walls in such material with sides parallel to a <111> crystallographic plane of such material, such walls being formed about at least a portion of the periphery of the device.
Claim 23
Independent Claim
64 words
The method of forming a semiconductor device comprising the step of etching into a surface of a layer of silicon material, such surface lying in a <100> crystallographic plane of such material, to form walls in such material with sides parallel to a <111> crystallographic plane of such material, such walls being formed about at least a portion of the periphery of the device.
Claim 24
Independent Claim
76 words
The method of forming a semiconductor device comprising the steps of etching into a surface of silicon material, such surface lying in a <100> crystallographic plane of such material to form walls in such material having sides parallel to planes disposed at angles in the order of 30 degrees with respect to an axis perpendicular to the surface of the material, such walls being formed about at least a portion of the periphery of the device.
Claim 25
Independent Claim
76 words
The method of forming a semiconductor device comprising the steps of etching into a surface of silicon material, such surface lying in a <100> crystallographic plane of such material to form walls in such material having sides parallel to planes disposed at angles in the order of 30 degrees with respect to an axis perpendicular to the surface of the material, such walls being formed about at least a portion of the periphery of the device.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-12-24 | 1983-06-25 | 1983-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-12-24 | 1987-06-25 | 1987-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-12-24 | 1991-06-25 | 1991-12-25 | $7700.00 | Window Closed / Lapsed |