Method for making a hot carrier pn-diode
Abstract
Abstract Disclosed is a Schottky barrier or hot carrier diode and process for making same wherein a diffused PN junction and a Schottky barrier junction are both formed in a body of semiconductor material. The diffused PN junction is formed by first diffusing an impurity through an opening in a diffusion mask and into one surface of the semiconductor body to form PN junction. Next, a large central portion of the region formed by the above diffusion is removed by etching or cutting, leaving unaffected by the etchant only that portion of the diffused region underlying and adjacent to the diffusion mask on the surface of the semiconductor body. The latter portion of the diffused region forms a relatively small area diffused PN junction. Finally, a Schottky barrier junction is formed in the etched out area of the semiconductor body, and the diode including the diffused and Schottky barrier junctions has a near-ideal current-voltage characteristic and still maintains its fast recovery time.
Inventors
- 👤 Jack L Saltich
- 👤 James L Rutledge
Bibliographic Details
Claims Analysis
Total Claims: 0References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1973-12-28 | 1974-06-29 | 1974-12-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1977-12-28 | 1978-06-29 | 1978-12-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1981-12-28 | 1982-06-29 | 1982-12-29 | $7700.00 | Window Closed / Lapsed |