Patent US4176206A successfully refreshed from Google Patents.
US4176206A
Expired / Lapsed
US
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Method for manufacturing an oxide of semiconductor
Assignee: Sony Corp
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Filing: 1976-12-02
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Granted: 1979-11-27
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Expires: 1996-12-02
Abstract
Abstract A method of manufacturing an oxide layer of semiconductor composition is disclosed. On the surface portion of semiconductor substrate, an oxide layer is formed by oxidizing it in heated water containing oxygen gas, such, for example, as ozone. One preferred method is to bubble the ozone through hot water which contains near saturated steam at the temperature of the water.
Inventors
- 👤 Makoto Inoue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:58
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6312; H10P14/6322; Y; Y10; Y10S; Y10S438/00; Y10S438/903
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
55 words
The method of manufacturing an oxide layer of semiconductor composition, comprising the steps of immersing a semiconductor compound substrate in heated water, and blowing an oxidizing gas in said water to dissolve at least as much as the maximum solubility of oxidizing gas at the temperature of said water between room temperature to boiling temperature.
Claim 2
Independent Claim
55 words
The method of manufacturing an oxide layer of semiconductor composition, comprising the steps of immersing a semiconductor compound substrate in heated water, and blowing an oxidizing gas in said water to dissolve at least as much as the maximum solubility of oxidizing gas at the temperature of said water between room temperature to boiling temperature.
Claim 3
Dependent Claim
15 words
The method according to claim 1, in which said semiconductor compound substrate is gallium arsenide.
Claim 4
Dependent Claim
18 words
The method according to claim 1, in which a noble metal is used in contact with said substrate.
Claim 5
Dependent Claim
12 words
The method according to claim 3, in which said catalyst is platinum.
Claim 6
Dependent Claim
12 words
The method according to claim 3, in which said catalyst is gold.
Claim 7
Dependent Claim
13 words
The method according to claim 1, in which said oxidizing gas is oxygen.
Claim 8
Dependent Claim
13 words
The method according to claim 1, in which said oxidizing gas is ozone.
Claim 9
Independent Claim
50 words
The method of manufacturing an oxide layer of semiconductor composition comprising the steps of immersing a semiconductor compound substrate composed of GaAs in heated water, and dissolving an oxidizing gas in said water at least as much as the maximum solubility of oxidizing gas at the temperature of said water.
Claim 10
Independent Claim
50 words
The method of manufacturing an oxide layer of semiconductor composition comprising the steps of immersing a semiconductor compound substrate composed of GaAs in heated water, and dissolving an oxidizing gas in said water at least as much as the maximum solubility of oxidizing gas at the temperature of said water.
Claim 11
Independent Claim
76 words
The method of manufacturing an oxide layer of semiconductor composition comprising the steps of immersing a semiconductor compound substrate in water in a pressure vessel, replacing the air in said pressure vessel by an oxydizing gas, sealing said pressure vessel, heating said pressure vessel to dissolve said oxidizing gas in said water at least as much as the maximum solubility of oxidizing gas at the temperature of said water in the range of 100° C.-500° C.
Claim 12
Independent Claim
76 words
The method of manufacturing an oxide layer of semiconductor composition comprising the steps of immersing a semiconductor compound substrate in water in a pressure vessel, replacing the air in said pressure vessel by an oxydizing gas, sealing said pressure vessel, heating said pressure vessel to dissolve said oxidizing gas in said water at least as much as the maximum solubility of oxidizing gas at the temperature of said water in the range of 100° C.-500° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-11-26 | 1983-05-28 | 1983-11-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-11-26 | 1987-05-28 | 1987-11-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-11-26 | 1991-05-28 | 1991-11-27 | $7700.00 | Window Closed / Lapsed |