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US4173791A
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Insulated gate field-effect transistor read-only memory array
Assignee: National Semiconductor Corp
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Filing: 1977-09-16
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Granted: 1979-11-06
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Expires: 1997-09-16
Abstract
Abstract An array of read-only memory cells is formed from a plurality of insulated gate field-effect transistors. Information may be programmed into individual transistors within the array by application of selected potentials to the connecting lines of the array. An individual cell is programmed by causing some of the electrons flowing between the source and drain to acquire sufficient energy to be injected into and trapped in the insulating material separating the channel from the gate electrode. The trapped electrons cause a change in the current-voltage characteristics of the transistor, which may be detected during reading of the memory cell most easily by reversing the polarity of the source and the drain. Embodiments of such an array are shown and may be utilized as a ROM, PROM and EPROM.
Inventors
- 👤 Antony G. Bell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 12:01
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/04; G11C16/0466; G11C16/0491; H; H10; H10D; H10D30/00; H10D30/60; H10D30/69
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
182 words
A random-access semiconductor memory array comprising: a common line; a plurality of x lines; a plurality of y lines; a plurality of semiconductor memory cells, each being coupled to at least one of the x lines and one of the y lines and the common line, wherein each semiconductor memory cell comprises an insulated gate field-effect transistor (IGFET) which includes: a substrate of one conductivity type; spaced apart source and drain regions formed in the substrate, each of opposite conductivity to the substrate; a gate insulating region formed on the substrate between the source and the drain; an electrically conductive gate electrode formed on the gate insulating region between the source and the drain; means for defining a state in the IGFET by applying electrical signals to the source, the drain, and the gate electrode to introduce charge into and store charge in the gate insulating region predominantly toward one of the source or the drain regions; and the application of electrical signals to the common, the x and the y lines, controls the means for defining a state in the IGFET.
Claim 2
Dependent Claim
182 words
A random-access semiconductor memory array comprising: a common line; a plurality of x lines; a plurality of y lines; a plurality of semiconductor memory cells, each being coupled to at least one of the x lines and one of the y lines and the common line, wherein each semiconductor memory cell comprises an insulated gate field-effect transistor (IGFET) which includes: a substrate of one conductivity type; spaced apart source and drain regions formed in the substrate, each of opposite conductivity to the substrate; a gate insulating region formed on the substrate between the source and the drain; an electrically conductive gate electrode formed on the gate insulating region between the source and the drain; means for defining a state in the IGFET by applying electrical signals to the source, the drain, and the gate electrode to introduce charge into and store charge in the gate insulating region predominantly toward one of the source or the drain regions; and the application of electrical signals to the common, the x and the y lines, controls the means for defining a state in the IGFET.
Claim 3
Dependent Claim
65 words
Structure as in claim 1 wherein: each IGFET includes a source, a drain and a gate; one of the source or the drain of each IGFET is connected to one of the Y lines; the other of the source or the drain of each IGFET is connected to the common line; and the gate of each IGFET is connected to one of the x lines.
Claim 4
Dependent Claim
21 words
Structure as in claim 2 wherein: the gate is polycrystalline silicon; and the source and the drain are both first-conductivity-type material.
Claim 5
Dependent Claim
42 words
Structure as in claim 3 wherein a gate insulating region separates the gate from a substrate, and the gate insulating region is formed from a layer of silicon dioxide and a layer of silicon nitride disposed on the layer of silicon dioxide.
Claim 6
Dependent Claim
18 words
Structure as in claim 4 wherein the common line may be selectably coupled to a selected low potential.
Claim 7
Independent Claim
221 words
A method of programming a random-access semiconductor memory array having a common line, a plurality m of x lines, a plurality n of y lines and a plurality of IGFET's wherein each IGFET is connected to one x line and one y line, transistor T ab being connected to line a and line b, wherein 0<a≦m and 0<b≦n, wherein each IGFET includes: a substrate of one conductivity type; spaced-apart source and drain regions formed in the substrate, each of opposite conductivity to the substrate; a gate insulating region formed on the substrate between the source and the drain; an electrically conductive gate electrode formed on the gate insulating region between the source and the drain; and means for defining a state in the IGFET by applying electrical signals to the source, the drain, and the gate electrode to introduce change into and store charge in the gate insulating region predominantly toward one of the source or the drain regions; and transistor T ab is programmed by the following steps: applying a first potential to the common line, the x lines and the y lines, applying a second potential to the common line, applying a third potential to all y lines except line b, applying a fourth potential to line a to activate the means for defining a state in the IGFET.
Claim 8
Independent Claim
221 words
A method of programming a random-access semiconductor memory array having a common line, a plurality m of x lines, a plurality n of y lines and a plurality of IGFET's wherein each IGFET is connected to one x line and one y line, transistor T ab being connected to line a and line b, wherein 0<a≦m and 0<b≦n, wherein each IGFET includes: a substrate of one conductivity type; spaced-apart source and drain regions formed in the substrate, each of opposite conductivity to the substrate; a gate insulating region formed on the substrate between the source and the drain; an electrically conductive gate electrode formed on the gate insulating region between the source and the drain; and means for defining a state in the IGFET by applying electrical signals to the source, the drain, and the gate electrode to introduce change into and store charge in the gate insulating region predominantly toward one of the source or the drain regions; and transistor T ab is programmed by the following steps: applying a first potential to the common line, the x lines and the y lines, applying a second potential to the common line, applying a third potential to all y lines except line b, applying a fourth potential to line a to activate the means for defining a state in the IGFET.
Claim 9
Dependent Claim
40 words
The method of claim 6 wherein the source of each IGFET is connected to the common line, the drain of each IGFET is connected to one y line, and the gate of each IGFET is connected to one x line.
Claim 10
Dependent Claim
21 words
A method as in claim 7 wherein each of the second, third and fourth potentials is higher than the first potential.
Claim 11
Dependent Claim
23 words
A method as in claim 8 wherein the fourth potential is at least as high as each of the second and third potentials.
Claim 12
Dependent Claim
27 words
A method as in claim 9 wherein the fourth potential is a pulsed signal having a maximum potential greater than each of the second and third potentials.
Claim 13
Dependent Claim
21 words
A method as in claim 10 wherein the first potential is ground potential and the second and third potentials are equal.
Claim 14
Dependent Claim
40 words
A method as in claim 6 wherein information stored in transistor T ab is sensed by applying a low potential to the common line and all x and y lines and a high potential to the a and b lines.
Claim 15
Independent Claim
282 words
A method of programming a random-access semiconductor memory array having a plurality r of i lines, a plurality s of j lines, a plurality of t of k lines and a plurality of IGFET's wherein the gate of each IGFET is connected to one i line, the source of each IGFET is connected to one j line and the drain of each IGFET is connected to one k line, whereby transistor T cde , connected to line c, line d and line e where 0<c≦r, 0<d≦s and 0<e≦t, and each IGFET includes: a substrate of one conductivity type; spaced-apart source and drain regions formed in the substrate, each of opposite conductivity to the substrate; a gate insulating region formed on the substrate between the source and the drain; an electrically conductive gate electrode formed on the gate insulating region between the source and the drain; means for defining a state in the IGFET by applying electrical signals to the source, the drain, and the gate electrode to introduce charge into and storage charge in the gate insulating region predominantly toward one of the source or the drain regions; and transistor T cde is programmed by the following steps: applying a first potential to all i, j and k lines; applying a second potential to line d; applying a third potential to all j and k lines which are on the same side of line d as is line e; applying a fourth potential to all j and k lines which are on the same side of line e as is line d; and applying a fifth potential to line c to thereby activate a means for defining a state in the IGFET.
Claim 16
Independent Claim
282 words
A method of programming a random-access semiconductor memory array having a plurality r of i lines, a plurality s of j lines, a plurality of t of k lines and a plurality of IGFET's wherein the gate of each IGFET is connected to one i line, the source of each IGFET is connected to one j line and the drain of each IGFET is connected to one k line, whereby transistor T cde , connected to line c, line d and line e where 0<c≦r, 0<d≦s and 0<e≦t, and each IGFET includes: a substrate of one conductivity type; spaced-apart source and drain regions formed in the substrate, each of opposite conductivity to the substrate; a gate insulating region formed on the substrate between the source and the drain; an electrically conductive gate electrode formed on the gate insulating region between the source and the drain; means for defining a state in the IGFET by applying electrical signals to the source, the drain, and the gate electrode to introduce charge into and storage charge in the gate insulating region predominantly toward one of the source or the drain regions; and transistor T cde is programmed by the following steps: applying a first potential to all i, j and k lines; applying a second potential to line d; applying a third potential to all j and k lines which are on the same side of line d as is line e; applying a fourth potential to all j and k lines which are on the same side of line e as is line d; and applying a fifth potential to line c to thereby activate a means for defining a state in the IGFET.
Claim 17
Dependent Claim
25 words
A method as in claim 13 wherein each of the second, fourth and fifth potentials is greater than either of the first and third potentials.
Claim 18
Dependent Claim
16 words
A method as in claim 14 wherein the first and the third potentials are ground potential.
Claim 19
Dependent Claim
30 words
A method as in claim 13 wherein at least one of the third and the fourth potentials is achieved by allowing the lines to which they are applied to float.
Claim 20
Dependent Claim
23 words
A method as in claim 16 wherein the fifth potential is at least as high as each of the second and fourth potentials.
Claim 21
Dependent Claim
28 words
A method as in claim 17 wherein the fifth potential is a pulsed signal having a maximum potential greater than each of the second and the fourth potential.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-11-05 | 1983-05-07 | 1983-11-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-11-05 | 1987-05-07 | 1987-11-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-11-05 | 1991-05-07 | 1991-11-06 | $7700.00 | Window Closed / Lapsed |