Process for electroforming copper foil

Claim 2

A process for electroforming a thin nodularized copper foil which is virtually pore free for use in printed circuits comprising the steps of: providing a single, preselected composition copper plating bath having nitrate ions in the concentration of between 3 and 50 grams/liter for promoting nodularizing of the outer surface of the foil; adding a fluoride ion in the concentration of between 0.05 and 10 grams/liter to said bath for increasing nucleation; and operating said bath at a constant predetermined cathode current density of between 50 and 300 amperes/foot 2 thereby providing a one-step method.

Claim 3

A process for electroforming copper foil on a carrier material in which said foil is virtually pore free and has a nodularized outer surface comprising the steps of: providing said carrier material with a parting layer to allow for peelability between said copper foil and the carrier material; passing said carrier material through a single preselected composition copper plating bath having nitrate ions in the concentration of between 3 and 50 grams/liter and fluoride ions in the concentration of between 0.05 and 10 grams/liter; and operating said bath at a constant predetermined cathode current density of between 50 and 300 amperes/foot 2 thereby providing a one-step process.

Claim 4

A process for electroforming copper foil on a carrier material in which said foil is virtually pore free and has a nodularized outer surface comprising the steps of: providing said carrier material with a parting layer to allow for peelability between said copper foil and the carrier material; passing said carrier material through a single preselected composition copper plating bath having nitrate ions in the concentration of between 3 and 50 grams/liter and fluoride ions in the concentration of between 0.05 and 10 grams/liter; and operating said bath at a constant predetermined cathode current density of between 50 and 300 amperes/foot 2 thereby providing a one-step process.

Claim 5

The process of claim 2 wherein said copper bath has copper ions in a concentration of between 10 and 70 grams/liter.

Claim 6

The process of claim 3 wherein said copper bath comprises an acid selected from the group consisting of sulphuric acid and fluoboric acid yielding a pH of less than 2.

Claim 7

The process of claim 4 wherein said fluoride-ion concentration is provided by a compound selected from the group consisting of sodium fluoride, calcium fluoride, potassium fluoride, ammonium fluoride, lithium fluoride and hydrofluoric acid.

Claim 8

The process of claim 5 further including maintaining said bath at a single preselected temperature between 22° and 50° C.

Claim 9

The process of claim 5 wherein said carrier material is selected by the group consisting of aluminum, nickel, iron and copper.

Claim 10

An electrodeposited foil according to the process as described by claim 2.

Claim 11

A process for electroforming thin copper foil on aluminum carrier material for use in printed circuits in which said foil is virtually pore free and has a nodularized outer surface comprising; providing a continuous strip of aluminum material; etching said aluminum material and rinsing said etched aluminum material in water; passing said material through a zincate immersion bath and rinsing said material in water; passing said material through a nitric acid bath and rinsing said material in water; passing said carrier material through a single preselected composition copper plating bath having nitrate ions in the concentration of between 3 and 30 grams/liter and fluoride ions in the concentration of between 0.05 and 10 grams/liter; and operating said bath at a constant, predetermined cathode current density of between 50 and 300 amperes/foot 2 thereby providing a one-step process.

Claim 12

A process for electroforming thin copper foil on aluminum carrier material for use in printed circuits in which said foil is virtually pore free and has a nodularized outer surface comprising; providing a continuous strip of aluminum material; etching said aluminum material and rinsing said etched aluminum material in water; passing said material through a zincate immersion bath and rinsing said material in water; passing said material through a nitric acid bath and rinsing said material in water; passing said carrier material through a single preselected composition copper plating bath having nitrate ions in the concentration of between 3 and 30 grams/liter and fluoride ions in the concentration of between 0.05 and 10 grams/liter; and operating said bath at a constant, predetermined cathode current density of between 50 and 300 amperes/foot 2 thereby providing a one-step process.

Claim 13

The process of claim 9 wherein said copper bath has copper ions in a concentration of between 10 and 70 grams/liter.

Claim 14

The process of claim 10 wherein said copper bath comprises an acid selected from the group consisting of sulphuric acid and fluoboric acid yielding a pH of less than 2.

Claim 15

The process of claim 11 wherein said fluoride-ion concentration is provided by a compound selected from the group consisting of sodium fluoride, calcium fluoride, potassium fluoride, ammonium fluoride, lithium fluoride, and hydrofluoric acid.

Claim 16

The process of claim 12 further including maintaining said bath at a single preselected temperature between 22° and 50° C.